DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3211 Isolated TO-220 low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES * Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) * Avalanche capability ratings * Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) (TC = 25C) ID(DC) 2.0 A ID(pulse) 8.0 A Total Power Dissipation (TA = 25C) PT1 2.0 W Total Power Dissipation (TC = 25C) PT2 25 W Channel Temperature Tch 150 C Drain Current (pulse) Note1 Storage Temperature Tstg -55 to +150 C Single Avalanche Current Note2 IAS 2.0 A Single Avalanche Energy Note2 EAS 2.7 mJ dv/dt 3.5 V/ns Diode Recovery dv/dt Note3 Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V 3. IF 1.0 A, Vclamp = 600 V, di/dt 100 A/ s, TA = 25C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13789EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan (c) 1998 2SK3221 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 A Gate Leakage Current IGSS VGS = 30 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 1.0 A 0.5 RDS(on) VGS = 10 V, ID = 1.0 A 3.3 Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S 4.4 Input Capacitance Ciss VDS = 10 V 290 pF Output Capacitance Coss VGS = 0 V 60 pF Reverse Transfer Capacitance Crss f = 1 MHz 5 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 1.0 A 7 ns tr VGS = 10 V 2 ns td(off) RG = 10 20 ns 10 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 450 V 9 nC Gate to Source Charge QGS VGS = 10 V 2.4 nC Gate to Drain Charge QGD ID = 2.0 A 2 nC Body Diode Forward Voltage VF(S-D) IF = 2.0 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 2.0 A, VGS = 0 V 0.9 s Reverse Recovery Charge Qrr di/dt = 50 A/ s 2.0 C TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 D.U.T. L RL PG. 50 VDD VGS = 20 0 V RG RG = 10 PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 VDD 10% 0 10% Wave Form VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D13789EJ1V0DS tr td(off) td(on) ton tf toff 2SK3221 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 25 20 15 10 5 0 0 0 25 50 75 100 125 150 0 175 TC - Case Temperature - C 25 50 75 100 125 150 175 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ID(Pulse) = 8.0 A 10 1 ms ID(DC) = 2.0 A 1 RDS(on) Limited (VGS = 20 V) 0.1 Power Dissipation Limited 100 ms 10ms T C = 25C Single Pulse 0.01 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth - Transient Thermal Resistance - C/W ID - Drain Current - A PW = 100 s Rth(j-A) = 62.5C/W 10 Rth(j-C) = 5.0C/W 1 Single Pulse 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13789EJ1V0DS 3 2SK3221 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Pulsed VGS = 10 V 4 100 ID - Drain Current - A ID - Drain Current - A 5 6V 8V 3 2 Tch = 125C 75C 10 1 Tch = 25C -25C 0.1 1 VDS = 10 V Pulsed 0 0 10 20 30 40 | yfs | - Forward Transfer Admittance - S 2 1 VDS = 10 V ID = 1 mA 0 -50 0 50 100 100 1 ID = 2.0 A 1.0 A 4 3 2 1 10 1 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - 6 5 0.1 ID - Drain Current - A Pulsed 5 Tch = -25C 25C 75C 125C 0.1 0.01 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 7 VDS = 10 V Pulsed 10 Tch - Channel Temperature - C 15 VGS - Gate to Source Voltage - V 4 15 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 0 10 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4 0 5 VGS - Gate to Source Voltage - V 5 VGS(off) - Gate Cut-off Voltage - V 0 VDS - Drain to Source Voltage - V Pulsed 7 6 5 VGS = 10 V 20 V 4 3 2 1 0 0.1 1 ID - Drain Current - A Data Sheet D13789EJ1V0DS 10 2SK3221 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 9 ID = 2.0 A 8 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 7 6 1.0 A 5 4 3 2 100 10 1 VGS = 10 V 0.1 0V 1 VGS = 10 V 0 -50 0 50 100 Pulsed 0 150 0.5 1 1.5 Tch - Channel Temperature - C VF(S-D) - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 1000 Ciss 100 Coss 10 Crss VGS = 0 V f = 1 MHz 1 0.1 1 10 td(off) tf 10 td(on) tr 1 VDD = 150 V VGS = 10 V RG = 10 0.1 0.1 100 1 ID - Drain Current - A VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 50 A/ s VGS = 0 V 1000 100 16 800 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 10000 10 ID = 2.0 A 14 600 VDD = 450 V 300 V 150 V 12 VGS 10 8 400 6 4 200 2 VDS 10 0 0 0.1 1 10 100 IF - Diode Forward Current - A VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 100 0 4 8 12 16 QG - Gate Charge - nC Data Sheet D13789EJ1V0DS 5 2SK3221 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 10 IAS = 2.0 A EAS 1 =2 .7 m J RG = 25 VDD = 150 V VGS = 20 0 V Starting Tch = 25C 0.1 10 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 80 60 40 20 1m 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C L - Inductive Load - H 6 VDD = 150 V RG = 25 VGS = 20 0 V IAS 2.0 A Data Sheet D13789EJ1V0DS 2SK3221 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 10.00.3 4.50.2 3.20.2 0.70.1 12.00.2 1.30.2 1.50.2 2.54 TYP. 2.54 TYP. EQUIVALENT CIRCUIT Drain 13.5 MIN. 40.2 30.1 15.00.3 2.70.2 Body Diode Gate 2.50.1 0.650.1 Gate Protection Diode Source 1. Gate 2. Drain 3. Source 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13789EJ1V0DS 7 2SK3221 * The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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