Semelab Power Management Division BI-POLAR POWER TRANSISTORS Diffused by SEMEFAB in Glenrothes and built by SEMELAB in Lutterworth are two ranges of high energy Bi-Polar transistors: G170 series of 4 die designed for use in very fast switching high voltage applications. * G130 series of 4 die intended for use in lower voltage applications featuring extremely low saturation voltages. Both series have been designed to offer the best performance currently available from Bi-Polar technologies which improves over that offered by MOS in many areas. applications and costs. G170 SERIES. Constructed using the SEMEFAB designed Distributed Base Technology, the range achieves: * Very fast switching times (t; typically 20ns). High voltage operation, Vcgo range from 550 volts to 1000 volts. * Very good saturation voltages. * Excellent heat management across the active area ~ leading to very good reliability in high energy applications. Packages used range from D-PAK for the smallest die, through industry standard metal and plastic styles, up to substantial Power Modules in either Plastic or Hermetic Metal. APPLICATIONS * Very highly efficient medium to high voltage Power Supplies. * Fast high voltage energy pulse applications. * Fast Switching Motor drive systems. * Consumer lighting inverter systems directly from mains supplies. * Cost efficient in most applications due to low losses in circuit and reduced silicon area compared to most other solutions. G130 SERIES This series offers the extremely efficient use of silicon in lower voltage systems and features: * Extremely low saturation voltages on resistance for the G133 series is better than 2mQ. * Fast switching for lower voltage applications. * Very good linearity. * Arobust device with good thermal management. * Cost efficient when compared with MOS power solutions due to reduced silicon area and electrical efficiency in most circuits. Page 12 Semelab Power Management Division BI-POLAR POWER TRANSISTORS DIE PRODUCTS All SEMEFAB die are available in die form for use in Hybrid Circuits, Multi-chip assemblies, Modules and in the manufacture of individual packages. All the die supplied by SEMELAB are available qualified for use in : Space Applications * Military Applications * Hi-Rei systems * Industrial and Professional systems * High Volume commercial and consumer applications For Quality Screening Options, see the SEMELAB High Reliability and Screening Options booklet. Die can be supplied in whole wafer form, sawn wafer on expanded film or in waffle trays. DIE CHARACTERISTICS G533A .G633A G733A | G333A G433A | G233A | G933A Units. Veeco [lc=tmAlg=0[ 75 100 | 126 | 160 ~ 200 | 250 | 300 [Vv | BV e506 _ _ [200 "250 r 300 | 350 400 | 500 ; 600 | v \eteom 150 135 ' 125 ! 120 100 | 90 | 80 A : | V=V i A loex ceo ot o1} 01 ;01 Of OF 01] POX [Vag = -1.5V : vio | - (max) lego Vea = 8V,lo=0] 0.1 (O01 01 01 Ot | ma @50% lciconn ; Nee * Veg = wy " 45 40 | 30 30 20 20 | 20 min TTS coo . ' me oe, ~ se] | ble size - 340 x 340 mils| Veejsat) | @50% lercons Oa 04 4 04 95 | 05 | 05 VI METALISATION: Top Ai Prime Types L | ' Back TW/Ni/Ag ATCHING, VERY Low SATURATION PN POWER. Tl cece DIE CHARACTERISTICS G535A_G635A | G735A | G335A G4a5A | G235A | G935A | Units Veco |lc=1mA,g=0] 75 100 | 125 ] 160 200 250 300 Vv BV cao 200 250 | 300 | 350 400 500 600 v fccn | | 100 90 85 | go 70 60 ss | V = Veco i ; mA loex Var = 1 8V 01 O41 rc 01 o1 / O01 | O14 max) ees [Vea=8V.1-=0] 0.1 ot ' O4 01. O41 | 01 | 01 | ma | tee * 250% lctcons 45 40 30 30 20 20 | 20 min Vee = 4V j Veeisan ]}@50% leon | 04 04 04 | 04 05 65 | os ly MEAS SATION: Top 7 280 x 280 mils Prime Types BUP4s BUP49 | BUPSO | BUPST BUPS2 | BUPS3 | BUPS4 Back - Ti/Ni/Ag Page 13 Semelab Power Management Division BI-POLAR POWER TRANSISTORS _ G136 FAMILY OF HIGH CURRENT, FAST SWITCHING, _ NERY LOW SATURATION NPN POWER TRANSISTORS DIE CHARACTERISTICS G536A G636A G736A G336A G436A | G236A Units Veco lo=1mA.tg=0[ 75 100 125 160 200 250 v BV cro : 200 | 250 300 | 350 | 400 ' 500 | v cio) | 55 | 50 45 | 45 40 | 35 A ee 0.1 0.1 0.1 0.4 0.1 0.1 mA Vag = ~-1.5V (max) eso [Ven =8V.lc-0] O1 | O14 OF a1 | 01. 01 [ma hep * 50% lercon 45 40 30 30 20 + 20 min Voge = 4V | | Voewsari | @50% logon | 0.4 | 04 04 | o4 | os | 05 | Vv |Merarisation top A Prime Types BUP46 | BUP&47 | BUPSS Back - Ti/Ni/Ag G537A G637A G737A G337A G437A G237A Units Voeo Ic=1mA,Ig=0] 75 100 125 160 200 250 Vv BV ego 200 250 300 350 400 500 v lo(eont 35 30 25 25 20 15 A V=V, loex ceo 0.1 0.1 0.1 0.1 0.1 o1 | Vee = -1.5V . | _ (max) lego Veg =8ViIo=0] 0.1 0.1 0.1 0.1 0.1 0.1 mA hee * 250% lcicom 45 40 30 30 20 20 i Fe Vog = 4V mn 5 - ya TOK a ra DIE SIZE - 175 x 175 mils Veeisaty | @50% Icicont) 0.4 0.4 0.4 0.4 0.5 0.5 V_IMETALISATION: Top _ al Prime Types BUP56 | BUP57 BUP58 Back - Ti/Ni/Ag G271A GSTIA GB71A GC71DE Units Veeco [lc = IMA, In = 0 250 300 400 500 Vv 3 BV ceo 500 600 800 1000 v 2S po PO fd. - 7 3 Ieteomty 60 50 25 25 A 5s E es lego V = Vceo 100 100 100 100 WA eS. 3 Veg = 5V = 3 lee 8 10 10 10 10 WA o _ Ic=0 oe = 3 me [PRE Piss) ass | ow | re Vog = 4V Veewsaty | @50% Icicomy 0.5 0.5 0.5 0.5 ee ATION: Top 7 B78 x 275 mils Prime Types BUL47B BUL47A BUL46B BUL46A Back - Ti/Ni/Ag Page 14 Semelab Power Management Division BI-POLAR POWER TRANSISTORS G172 FAMILY OF HIGH ENERGY, FAST SWITCHING, _NPN BI-POLAR TRANSISTORS DIE CHARACTERISTICS G572A G672A G372A | G272A | G972A | GB72A ,GC72DE Units lo = mA i ye oT " Voeo 9 75 100 | 160 250 | 300 | 400 500 | v = | BE Look bo , ee do uw. pb. od = BYcac 200 250 | 350} 500 600 | 800 | 1000 Jv 7 | Hecomy | 50 45 | 35 | 40 | 30 | 15 15 | A e lag |V = Veo 100 100 | 100 ; 100 | 100 / 100 j 100 | uA = Veg = 11V : & lego \ a 10 10. 19 10 ! 10 ' 10 | 10 BA _ i hee * "Gieom) | 99 20 | 20 15. 15 15 15 | min | Vor = 4V : | | | DIE SIZE 229 x 229 mil . 9 : : - x mils} Veewsan J@50% low | 05 05 | 05 | 05 | 05 | 05 | 05 | V |MeraLisarion. Top al Prime Types | Seve pviaen puso [pues Back Ti/NV/Ag DIE CHARACTERISTICS G5S75A4 G675A i G375A | G275A | G975A | @B754 GC75A | Units le = 1mA re I VcEo =o 75 100 | 1760 250 300 | 400 500 Vv po BEL ee - i ee ee BVcac 200 250 | 350 | 500 , 600 800 | 1000 Vv lefeont) L 15 10 7 | 5 | 4 i 3 2 A | Sicon) | 2, wh 2b te. 6 fp AL lope V = Veco, 100 100 100 1 100 | 100 | 100 100 | yA [Veg = 9V- ~ | [ leso <0 10 10 10 10 | 10 ' 10 ; 10 WA B C7 1 oe Le - a fe np - - poe 50% Leieany t ! Ree * 20 20 1 20 , 20 15 15 : 15 min Vog = AV : | : . | DIE SIZE - 126 x 126 mils Vegisat | 850% leccony | 0.5 O05, 05 ) 05 | 05 05, 05 V_ | METALISATION: Top - Al Prime Types | BULS9A, BULS6B| & sua mula BULS4B [BULS4A Back TUNI/Ag NPN BIL-POLAR TRANSISTOR DIE CHARACTERISTICS G577A__G677A | 377A | G877A | G977A | GB77A | GC77A| Units Ip =1mA I Veco |" . 75 100 | 160 ; 250 300 | 4oo | soo | v B= i -_ fb Po ae be we fo fe BVoso | _ |. 200-250 | 350 | 500 | 600 ~ 800 ' 000 Vv loqeann 15 10 7 i 5 | 4 173 2 A ico |V=Vceo | 100 100 100 | 100 |. 100 | 100 | 100 | wA Vep = OV i ! i lego 5 10 10 10 | 10 to | 10 | 10 [ wa 8 es | | i | 50% | | Nee * ow 20 20 20, 20 {| 15 | 15 15 | min pf ee ff ft fe J ve size 90 x 90 mils Veeisan | @50% loom | 05 05 | 05 05 | 05 | 05 | 05 | Vv |metauisation: Too al Prime Types | BULS9A BULS8B| BULSSA) BULSSB BULSSA |BULS4B | BULS4A Back Ti/Ni/Ag Page 15