BSS8402DW Features Mechanical Data * * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Lead Free/RoHS Compliant (Note 1) "Green" Device (Notes 2 and 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Weight: 0.008 grams (approximate) * * * * * SOT363 D1 G2 S2 Q1 Q2 S1 G1 D2 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number BSS8402DW-7-F BSS8402DWQ-13-F Notes: Qualification Commercial Automotive Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 4. For packaging details, go to our website at http://www.diodes.com Marking Information KNP Date Code Key Year 2003 Code P Month Code Jan 1 2004 R 2005 S Feb 2 BSS8402DW Document number: DS30380 Rev. 13 - 2 2006 T Mar 3 2007 U Apr 4 YM NEW PRODUCT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 2008 V May 5 KNP = Product Type Marking Code YM = Date Code Marking Y = Year (ex: R = 2004) M = Month (ex: 9 = September) 2009 W 2010 X Jun 6 1 of 7 www.diodes.com Jul 7 2011 Y Aug 8 2012 Z Sep 9 2013 A 2014 B Oct O 2015 C Nov N 2016 D Dec D September 2011 (c) Diodes Incorporated BSS8402DW Maximum Ratings - Total Device @TA = 25C unless otherwise specified NEW PRODUCT Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Symbol PD RJA TJ, TSTG Operating and Storage Temperature Range Maximum Ratings N-CHANNEL - Q1, 2N7002 Section Characteristic Symbol VDSS VDGR Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 5) Continuous Pulsed Continuous Continuous @ 100C Pulsed VGSS ID Maximum Ratings P-CHANNEL - Q2, BSS84 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20K Gate-Source Voltage Drain Current (Note 5) Notes: Continuous Continuous Symbol VDSS VDGR VGSS ID Value 200 625 Units mW C/W -55 to +150 C @TA = 25C unless otherwise specified Value 60 60 20 40 115 73 800 Units V V V mA @TA = 25C unless otherwise specified Value -50 -50 20 -130 Units V V V mA 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. BSS8402DW Document number: DS30380 Rev. 13 - 2 2 of 7 www.diodes.com September 2011 (c) Diodes Incorporated BSS8402DW Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage NEW PRODUCT Zero Gate Voltage Drain Current @ TC = 25C @ TC = 125C Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance @ TJ = 25C @ TJ = 125C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Symbol Min Typ BVDSS 60 @TA = 25C unless otherwise specified Max Unit 70 V VGS = 0V, ID = 10A A VDS = 60V, VGS = 0V IDSS 1.0 500 IGSS 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 2.5 V RDS (ON) 3.2 4.4 7.5 13.5 ID(ON) gFS 0.5 80 1.0 A mS VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 Electrical Characteristics P-CHANNEL - Q2, BSS84 Section Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Test Condition @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit BVDSS -15 -60 -100 A A nA 10 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS -50 VGS(th) RDS (ON) gFS -0.8 .05 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Notes: V Test Condition 6. Short duration pulse test used to minimize self-heating effect. BSS8402DW Document number: DS30380 Rev. 13 - 2 3 of 7 www.diodes.com September 2011 (c) Diodes Incorporated BSS8402DW N-CHANNEL - 2N7002 SECTION 7 1.0 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN-SOURCE CURRENT (A) 0.8 0.6 0.4 0.2 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 5 4 3 2 1 0 5 2.5 2.0 1.5 VGS = 10V, ID = 200mA 1.0 -55 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 6 0 0 3.0 5 4 3 2 1 0 0 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 250 10 VDS = 10V Pd, POWER DISSIPATION (mW) 9 VGS, GATE-SOURCE CURRENT (V) NEW PRODUCT Tj = 25C 8 7 6 5 4 3 2 200 150 100 50 1 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics BSS8402DW Document number: DS30380 Rev. 13 - 2 1 4 of 7 www.diodes.com 0 50 75 100 125 150 175 200 25 TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 September 2011 (c) Diodes Incorporated BSS8402DW P-CHANNEL - BSS84 SECTION -600 -1.0 -0.8 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (mA) -500 -400 -0.6 -300 -0.4 -200 -0.2 -100 0 -0.0 0 -2 -3 -4 -5 VDS, DRAIN-SOURCE (V) Fig. 7 Drain-Source Current vs. Drain-Source Voltage -1 10 0 VGS = -10V ID = -0.13A 8 RDS, ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () -5 -1 -2 -3 -4 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 8 Drain Current vs. Gate-Source Voltage 15 9 7 6 5 4 3 12 9 6 3 2 TA = 125 C 1 TA = 25 C 0 0 -1 -2 -4 -5 -3 VGS, GATE TO SOURCE (V) Fig. 9 On-Resistance vs. Gate-Source Voltage 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 10 On-Resistance vs. Junction Temperature -25 25.0 20.0 RDS, ON-RESISTANCE () NEW PRODUCT T A = 25C VGS = -3.5V VGS = -3V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Fig. 11 On-Resistance vs. Drain Current BSS8402DW Document number: DS30380 Rev. 13 - 2 1.0 5 of 7 www.diodes.com September 2011 (c) Diodes Incorporated BSS8402DW Package Outline Dimensions NEW PRODUCT A B C H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm Suggested Pad Layout E Z E C G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 X BSS8402DW Document number: DS30380 Rev. 13 - 2 6 of 7 www.diodes.com September 2011 (c) Diodes Incorporated BSS8402DW NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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