BSS8402DWQ-13-F - DIODES Incorporated

BSS8402DW

Document number: DS30380 Rev. 13 - 2 1 of 7

www.diodes.com September 2011

BSS8402DW

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Notes 2 and 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Qualification Case Packaging

BSS8402DW-7-F Commercial SOT363 3000/Tape & Reel

BSS8402DWQ-13-F Automotive SOT363 10000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

4. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code P R S T U V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View Top View

Internal Schematic

S

2

D

2

Q

1

Q

2

D

1

S

1

G

2

G

1

KNP = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: R = 2004)

M = Month (ex: 9 = September)

KNP

YM

BSS8402DW

Document number: DS30380 Rev. 13 - 2 2 of 7

www.diodes.com September 2011

BSS8402DW

NEW PRODUCT

Maximum Ratings – Total Device @TA = 25°C unless otherwise specified

Characteristic Symbol

V

alue Units

Power Dissipation (Note 5) PD 200 mW

Thermal Resistance, Junction to Ambient RθJA 625 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Maximum Ratings N-CHANNEL – Q1, 2N7002 Section @TA = 25°C unless otherwise specified

Characteristic Symbol

V

alue Units

Drain-Source Voltage VDSS 60 V

Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V

Gate-Source Voltage Continuous

Pulsed VGSS ±20

±40 V

Drain Current (Note 5) Continuous

Continuous @ 100°C

Pulsed ID 115

73

800 mA

Maximum Ratings P-CHANNEL – Q2, BSS84 Section @TA = 25°C unless otherwise specified

Characteristic Symbol

V

alue Units

Drain-Source Voltage VDSS -50 V

Drain-Gate Voltage RGS ≤ 20KΩ VDGR -50 V

Gate-Source Voltage Continuous VGSS ±20 V

Drain Current (Note 5) Continuous ID -130 mA

Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

BSS8402DW

Document number: DS30380 Rev. 13 - 2 3 of 7

www.diodes.com September 2011

BSS8402DW

NEW PRODUCT

Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current @ TC = 25°C

@ TC = 125°C IDSS ⎯ ⎯ 1.0

500 µA VDS = 60V, VGS = 0V

Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS(th) 1.0 ⎯ 2.5 V VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance @ TJ = 25°C

@ TJ = 125°C RDS (ON) ⎯ 3.2

4.4 7.5

13.5 Ω VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current ID(ON) 0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V

Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss ⎯ 22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss ⎯ 11 25 pF

Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time tD(ON) ⎯ 7.0 20 ns VDD = 30V, ID = 0.2A,

RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns

Electrical Characteristics P-CHANNEL – Q2, BSS84 Section @ TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current IDSS ⎯

⎯

-15

-60

-100

µA

nA

VDS = -50V, VGS = 0V, TJ = 25°C

VDS = -50V, VGS = 0V, TJ = 125°C

VDS = -25V, VGS = 0V, TJ = 25°C

Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

-0.8 ⎯ -2.0 V VDS = VGS, ID = -1mA

Static Drain-Source On-Resistance RDS

(

ON

)

⎯ ⎯ 10 Ω VGS = -5V, ID = -0.100A

Forward Transconductance gFS .05 ⎯ ⎯ S VDS = -25V, ID = -0.1A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss ⎯ ⎯ 45 pF VDS = -25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss ⎯ ⎯ 25 pF

Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time tD

(

ON

)

⎯ 10 ⎯ ns VDD = -30V, ID = -0.27A,

RGEN = 50Ω, VGS = -10V

Turn-Off Delay Time tD

(

OFF

)

⎯ 18 ⎯ ns

Notes: 6. Short duration pulse test used to minimize self-heating effect.

BSS8402DW

Document number: DS30380 Rev. 13 - 2 4 of 7

www.diodes.com September 2011

BSS8402DW

NEW PRODUCT

N-CHANNEL – 2N7002 SECTION

0

0.2

0.4

0.6

0.8

1.0

012345

V , DRAIN-SOURCE VOLTAGE (V)

Fi g. 1 On-R egion Charact e r i s t ics

DS

I , DRAIN-SOURCE CURRENT (A)

D

0

1

2

3

4

5

00.2

I , DRAIN CURRENT (A)

Fig . 2 On-R esistance vs . Dr ai n Current

D

T = 25C

j

°

6

7

0.4 0.6 0.8 1.0

R , STATIC DRAIN- S OURCE

ON-RESISTANCE ( )

DS(ON)

Ω

1.0

1.5

2.0

2.5

3.0

-55 -30 -5 20 45 70 95 120 145

T, JUNCTION TEMPERA T URE ( C)

Fig. 3 On-Resistance vs. Junction Temperature

j

°

V = 10V,

I = 200mA

GS

D

R , STATIC DRAIN-SOURCE

ON- RESISTANCE ( )

DS(ON)

Ω

0

V , GA T E TO SOURCE VOLTAGE (V)

Fig. 4 On-Resistance vs. Gate-Source V oltage

GS

1

2

3

4

5

6

0 2 4 6 81012141618

R , STA TIC DRAIN-SOURCE

ON-RESIST ANCE ( )

DS(ON)

Ω

0

2

1

4

3

00.20.4

0.6 0.8 1

V

G

A

T

E-S

O

U

R

C

E

C

U

R

EN

T

(V)

GS,

I , DRAIN CURRENT (A)

Fig. 5 Typical Transfer Characteristics

D

6

5

8

7

10

9

V = 10V

DS

0

50

100

150

200

250

025

50 75 100 125 150 175 200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (mW)

d

T , AMBIENT TEMPERA TURE ( C)

Fig. 6 Max Power Dissipation vs. Ambient Temperature

A

°

BSS8402DW

Document number: DS30380 Rev. 13 - 2 5 of 7

www.diodes.com September 2011

BSS8402DW

NEW PRODUCT

P-CHANNEL – BSS84 SECTION

0

-600

-500

-400

-300

-200

-100

0-2-1 -5-4-3

I, D

R

AI

N

-S

O

U

R

C

E

C

U

R

E

N

T

(mA)

D

V , DRAIN-SOURCE (V)

Fig. 7 Drain-Source Current vs. Drain-Source Voltage

DS

T = 25C

A

°

-0.0

-1.0

-0.8

-0.6

-0.4

-0.2

0-2-3-4-1 -8-7

-6

-5

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V , GA T E-TO-SOURCE VOLTAGE (V)

Fig. 8 Drain Current vs. Gate-Source Voltage

GS

0

1

2

4

5

3

6

8

7

10

9

0-1-2-3 -4 -5

V , GA TE T O SOURCE (V)

Fig . 9 On-Res is tance vs. Gate-Source Volta ge

GS

T= 25C

A

°

T = 125C

A

°

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)

Ω

0

3

6

9

12

15

-50 -25 025 50 12510075 150

T , JUNCTION TEMPERATURE (°C)

Fig. 10 On-Resistance vs. Junction Temperature

J

V = -10V

I = -0.13A

GS

D

R , ON-RESIST A NCE ( )

DS

Ω

0.0

5.0

10.0

-0.0 -0.2 -0.4 -0.6 -0.8 1.0

I , DRAIN CURRENT (A)

Fig. 11 On - Resist ance vs . Dr ain Cur r ent

D

15.0

20.0

25.0

V = -8V

GS

V = -10V

GS

V = -3V

GS

V = -3.5V

GS

V = -4V

GS

V = -6V

GS

V = -5V

GS

R

,

O

N-

R

ESIS

T

AN

C

E ( )

DS

Ω

BSS8402DW

Document number: DS30380 Rev. 13 - 2 6 of 7

www.diodes.com September 2011

BSS8402DW

NEW PRODUCT

Package Outline Dimensions

Suggested Pad Layout

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.40 0.45

H 1.80 2.20

J 0 0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.22

α 0° 8°

All Dimensions in mm

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6

C 1.9

E 0.65

A

M

JL

D

B C

H

K

F

X

Z

Y

C

EE

G

BSS8402DW

Document number: DS30380 Rev. 13 - 2 7 of 7

www.diodes.com September 2011

BSS8402DW

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com