PD - 93845A IRF7607 HEXFET(R) Power MOSFET Trench Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 20V RDS(on) = 0.030 T o p V ie w Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Q Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 6.5 5.2 50 1.8 1.2 0.014 12 -55 to + 150 V A W W/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-AmbientS Max. Units 70 C/W 1 02/26/01 IRF7607 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 15 2.2 3.5 8.5 11 36 16 1310 150 36 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.030 VGS = 4.5V, ID = 6.5A R 0.045 VGS = 2.5V, ID = 5.2A R 1.2 V VDS = V GS, ID = 250A --- S VDS = 10V, ID = 6.5A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, V GS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 22 ID = 6.5A 3.3 nC VDS = 10V 5.3 VGS = 5.0V R --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- RD = 10 R --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- 1.8 --- --- 50 --- --- --- --- 19 13 1.2 29 20 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0VR TJ = 25C, I F = 1.7A di/dt = 100A/s R D S Notes: Q Repetitive rating; pulse width limited by S Surface mounted on FR-4 board, t 5sec. max. junction temperature. (See fig. 11) R Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7607 100 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V 10 1.50V 20s PULSE WIDTH T = 25 C J 1 0.1 1 10 10 1.50V 100 TJ = 25 C TJ = 150 C 10 V DS = 15V 20s PULSE WIDTH 3.0 Fig 3. Typical Transfer Characteristics www.irf.com 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 2.5 1 10 100 Fig 2. Typical Output Characteristics 100 2.0 J VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH T = 150 C 1 0.1 VDS , Drain-to-Source Voltage (V) 1 1.5 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 5.3A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7607 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1600 C iss 1200 800 400 Coss Crss 0 1 10 ID = 6.5A 5.3A VDS = 10V VGS , Gate-to-Source Voltage (V) 2000 8 6 4 2 0 10 0 100 4 8 12 16 20 24 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R I D , Drain Current (A) ISD , Reverse Drain Current (A) DS(on) 10 TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.2 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com 6.0 0.20 5.0 0.10 VGS(th) , Variace ( V ) I D , Drain Current (A) IRF7607 4.0 3.0 2.0 0.00 Id = 250A -0.10 -0.20 -0.30 1.0 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 TC , Case Temperature ( C) 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 R DS ( on) , Drain-to-Source On Resistance ( ) IRF7607 R DS(on) , Drain-to -Source Voltage ( ) 0.040 0.035 0.030 0.025 Id = 5.3A 0.020 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 8.0 0.10 0.08 0.06 0.04 VGS= 2.5V VGS = 4.5V 0.02 0 10 20 30 40 ID, - Drain Current (A ) Fig 13. Typical On-Resistance Vs. Drain Current www.irf.com IRF7607 Micro8 Package Outline Dimensions are shown in millimeters (inches) LE A D A S S IG N M E N T S IN C H E S D IM D 3 -B - D D D D D 1 D 1 D 2 D2 8 7 6 5 8 7 6 5 S ING LE D U AL 8 7 6 5 3 H E 0.2 5 (.0 1 0) -A - M A M 1 2 3 4 1 2 3 4 S S S G S 1 G 1 S2 G 2 1 2 3 4 e 6X M IL L IM E T E R S M IN M AX M IN M AX A .0 3 6 .0 44 0 .9 1 1 .11 A1 .0 0 4 .0 08 0 .1 0 0 .20 B .0 1 0 .0 14 0 .2 5 0 .36 C .0 05 .0 0 7 0 .1 3 0 .1 8 D .1 16 .1 2 0 2 .9 5 3 .0 5 e .0 2 5 6 B A SIC 0 .6 5 BA S IC e1 .0 1 2 8 B A SIC 0 .3 3 BA S IC E .1 1 6 .1 20 2.9 5 3 .0 5 H .1 88 .1 9 8 4 .7 8 5 .0 3 L .0 1 6 .0 2 6 0 .4 1 0 .6 6 0 6 0 6 e1 R E C O M M E N D E D F O O T P R IN T 1 .04 ( .04 1 ) 8X A -C B 0 .1 0 ( .00 4 ) A1 8X 0 .0 8 (.0 0 3 ) M C A S 0 .38 8X ( .0 1 5 ) C L 8X 8X B S 3 .2 0 ( .1 2 6 ) 4 .24 5 .2 8 ( .1 6 7 ) ( .20 8 ) N O TES : 1 D IM E N SIO NIN G A ND T OL ER A NC IN G P E R A N SI Y 14 .5M -1982 . 0 .6 5 6 X ( .02 5 6 ) 2 C ON TR OL LING DIM EN S ION : IN C H. 3 D IM E N SIO NS DO N O T IN CL UD E M OLD F L AS H . Micro8 Part Marking Information EXAMPLE: T HIS IS AN IRF7501 LOT CODE (XX) DATE CODE (YW) Y = YEAR W = WEEK PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR DATE CODE EXAMPLES : YWW = 9503 = 5C YWW = 9532 = EF YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETTER www.irf.com YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z 7 IRF7607 Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N OTES: 1 . O U TL IN E C O N F O R M S TO E IA -4 81 & E IA -54 1. 2 . C O N TR O LL IN G D IM E N SIO N : M IL LIM E TE R. 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/01 8 www.irf.com