02/26/01
HEXFET® Power MOSFET
Parameter Max. Units
RθJA Maximum Junction-to-AmbientS70 °C/W
Thermal Resistance
VDSS = 20V
RDS(on) = 0.030Ω
Description
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IRF7607
● Trench Technology
● Ultra Low On-Resistance
● N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A
IDM Pulsed Drain Current Q50
PD @TA = 25°C Power Dissipation 1.8
PD @TA = 70°C Power Dissipation 1.2
Linear Derating Factor 0.014 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
Micro8
PD - 93845A
IRF7607
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030 VGS = 4.5V, ID = 6.5A R
––– ––– 0.045 VGS = 2.5V, ID = 5.2A R
VGS(th) Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 13 ––– ––– SV
DS = 10V, I D = 6.5A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 15 22 ID = 6.5A
Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = 5.0V R
td(on) Turn-On Delay Time ––– 8.5 ––– VDD = 10V
trRise Time ––– 11 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 36 ––– RG = 6.0Ω
tfFall Time ––– 16 ––– RD = 10Ω R
Ciss Input Capacitance ––– 1310 ––– VGS = 0V
Coss Output Capacitance ––– 150 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 36 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) Qp-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, I S = 1.7A, VGS = 0VR
trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, I F = 1.7A
Qrr Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/µs R
Source-Drain Ratings and Characteristics
A
50
–––
–––
–––
1.8
–––
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
S Surface mounted on FR-4 board, t ≤ 5sec.
S
D
G
R Pulse width ≤ 400µs; duty cycle ≤ 2%.
IRF7607
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
5.3A
1
10
100
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5 2.0 2.5 3.0 3.5
V = 15V
20
µ
s PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRF7607
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
04812 16 20 24
0
2
4
6
8
10
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D5.3A
V = 10V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS
(
on
)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Volta
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
1ms
10ms
1 10 100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
6.5A
IRF7607
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
VGS(th) , Variace ( V )
Id = 250µA
IRF7607
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Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate -to -Source Voltage ( V )
0.020
0.025
0.030
0.035
0.040
RDS(on) , Drain-to -Source Voltage ( Ω )
Id = 5.3A
010 20 30 40
ID, - Drain Current (A )
0.02
0.04
0.06
0.08
0.10
RDS ( on) , Drain-to-Source On Resistance ( Ω )
VGS = 4.5V
VGS= 2.5V
IRF7607
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Micro8
Package Outline
Dimensions are shown in millimeters (inches)
INCHE S MILLIM ET ER S
MIN MA X MIN MAX
A
0.10 (.004)
0.25 (.010 ) M A M
H
1 2 3 4
8 7 6 5
D
- B - 3
3E
- A -
e
6X e 1
- C -
B 8X
0.08 (.003) M C A S B S
A 1 L
8X C
8X
θ
NOTES:
1 DIMENSIONING AND T OLERANCING PER A NSI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BA SIC 0.65 BA SIC
e1 .0128 BA SIC 0.33 BASIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66
θ
0° 6° 0 ° 6 °
DIM
LE AD ASSIGNMENT S
SINGLE DUAL
D D D D D1 D1 D2 D2
S S S G S1 G1 S2 G2
1 2 3 4 1 2 3 4
8 7 6 5 8 7 6 5
REC OM M ENDE D FOO T PRIN T
1.04
( .041 )
8X
0. 3 8
( .015 ) 8X
3.20
( .126 ) 4.24
( .167 ) 5.28
( .208 )
0.65
( .0256 )6X
Micro8
Part Marking Information
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
01
02
03
04
24
WYEAR Y
A2001 1 B2002 2 C2003 3 D1994 4
X
1999 0
WW = (27-52) IF PRECEDED B Y A LETTER
WEEK
27
28
29
30
50
WYEAR
A2001 A B2002 B C2003 C D1994 D
X
J
YWW = 9532 = EF
YWW = 9503 = 5C
DATE CODE EXAMPLES:
1995
1996
1997
1998
1999
2000
E
F
G
H
K
Y
1995
1996
1997
1998
2000 9
8
7
6
5
PAR T NUMB ER
EXAM PLE: THIS IS AN IRF7501
DATE CODE (YW)
Y = YEA R
W = WEEK
WORK
WEEK
WORK
25 Y
51 Y
26 Z
52 Z
LOT CODE (X X)
IRF7607
8www.irf.com
Micro8
Tape & Reel Information
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.4 0 ( .566 )
12.4 0 ( .488 )
NO TES :
1. CONTRO LLING DIMENSION : MILLIMETER.
2. O U TLINE C O NFO R MS T O EIA-481 & EIA-541.
FEED DIRECTIO N
TERMINA L NUMB ER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. OU TLINE C ON FOR M S TO EIA-481 & EIA-541.
2. CONTRO LLING DIMENSIO N : M ILLIMETER.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/01
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.