Breasts Wi Lets) VOC M CT NCIS KO) T= N-CHANNEL DEPLETION MODE MOSFETS Power : Gos 25 C Ves (ore) & NF Lead Amb } V(eryoasf | V(ar}orss | V(ar}oss 1 V(er)oe | doss: Tess bf. Ino(on) Volts yos(on)'{: Veo | Ciss } Cres}. Gos | NF | Test | Case|Con- Part No. Structure | mW] Volts] Volts Volts Volis | mA nA mA Min/ Ohms! umbo Ff pF; dB} dB | Freq! P.18} fig. Max] Max Max Wax Max Typ Typ Typ Max Typ Typ yp} Typ | Typ | Typ | MHz | P.194 P.20 MEM 557 Triode 225 +20 +10 _ +30 5 01 [-.3/-4 200 | 10,000 | 3 0.32 | 18 2.5 | 200 4 2 MEM 557C Triode 225 +20 +10 _ 30 5 05 |-.3/-4 200 8,000 | 3 0.32 | 17 3.0 | 200 4 2 *MEM 5640 Tetrode 225 +20 +6 +6 _ 5 1.0* _ -1.5 {12,000 [5 0.021 17 3.5 {| 200 4 4 *MEM 571C Triode 150 +20 +6 _ +26 4 +10* _ _ _ 4 0.32417 2.5 | 200 4 2 *MEM 614 Tetrode 225 +20 +6 6 +26 5 1.07 _ 1.0 | 10,000 ],5 0.02 | 22 3.5 | 100 4 4 *MEM 616 Tetrode 360 +25 +6 +6 +31 10 20* _ =15 G1/-49.G2 |18,000)54 [ 02] 18 3.0 | 200 4 4 *MEM 617 Tetrode 360 +20 6 +6 +31 6 20 | -1061/~-40602 _ 4,400}6.0 | 02) 17 3.0 |200 to 4 4 44 *MEM 618 Tetrode 360 +20 +6 oL6 +31 10 20* 18.140 G2 - | 14,000 | 5.1 -02] 30 2.5 44 4 4 *MEM 630 Tetrode 500 +25 +6 +6 +25 6 20* |-4.0G1 | 14,000 | 6 .03 2.5 7} 105 10 5 2.0 G2 *MEM 631 Tetrode 500 +25 +6 16 +25 10 20* |40G1 | 16,000] 6 03 3.5 | 200 10 5 3.0 G2 *MEM 632 Tetrode 500 +25 6 +6 +25 6 20* |-4.0G1 _ _ 6 03 200 to} 10 5 2.0 G2 44 *MEM 633 Tetrode 500 +25 +6 +6 +25 6 20* |40G1 _ 6 }| | - 0Sto; 10 5 2.0 G2 10.7 #* MEM 636 Tetrode 360 +25 +6 +6 +31 10 20* > =15 G1/40 a2 |18,000)5.4] .02] 21 2.5 | 200 4 4 2* MEM 637 Tetrode 360 +25 +6 +6 +31 6 20 _ 1.0 61/40 02 _ 4,400}6.0 | .02) 18 3.0 [200 to 4 4 44 #* MEM 638 Tetrode | 360 +25 +6 16 +31 10 20* _ 15. 01/-4.0.G2 | 14,000 | 5.1 .02} 30 2.5 44 4 4 *MEM 640 Tetrode 360 +25 +6 +6 +25 10 20* |-1.45G1 | 16,000] 6 02] 22 3.5 | 105 4 4 +0.2 G2 *MEM 641 Tetrode 360 +25 +6 +6 425 6 20* |}1.0G1 4,000 | 6 {||] }100to] 4 4 +0.2 G2 10.7 *MEM 642 Tetrode 360 +25 +6 16 +25 10 20* {-1.5G1 {14,0001 6 .02| | | 10.7 4 4 +0.2 G2 *MEM 643 Tetrode 360 +25 +6 +6 +25 10 20* |-15G1 | 16,000] 6 02 | 22 3.5 | 105 10 5 +0.2 G2 *MEM 644 Tetrode 360 +25 +6 +6 +25 6 20* |1.0G1 4,000 | 6 - | | - f100 to} 10 +0.2 G2 10.7 MEM 645 Tetrode 360 +25 6 +6 +25 10 20* |-15G1 | 14,000 | 6 002} |} | 10.7] 10 5 +0.2 G2 *MEM 655 Triode 225 +20 +6 +30/6 4 +10* _ /{4e 30 | 10,000 | 4 0.32 | 22 2.5 | 100 4 2 #* MEM 660 Triode 150 4:20 | +30/2 _ +30/20} 3 A* 60 |.3/4+ 30" | 10,000 | 4.5 | 0.307 |; 4 2 % MEM 670 Triode 150 +20} +100 _ +20 |f.01pA] |-.3/-4 2,000 | 2 0.3 --j- _ 4} 32 #* MEM 680 Tetrode 360 +25 +6 +6 +25 10 20* | Asav-soae |18,000}5.4] .02} 21 2.5 $ 200 4 4 t* MEM 681 Tetrode | 360 +25 +6 +6 +25 6 20 | -0ey-410a2 4,400 16.0] .02| 18 3.0 j200 to] 4 4 44 #* MEM 682 Tetrode 360 +25 6 +6 +25 10 20* _ 1.6. @1/4.0 G2 114,000 45.1 02} 30 25 44 4 4 3N 128 Triode 100 +20 +10 _ 10 JO1TpA; 15 | 10,000 | 5.8 | 0.13] 18 4.0 | 200 4 2 3N 138 Triode 150 +35 #14 +35 {O1pA} /8e 240 6,000 | 3.0] 0.25; | 4 2 3N 139 Triode 330 +35! +3/8 _ +42 15 1 3.3 _ 4,500 | 3.0 |] 0.19} 17 4 _ 4 2 3N 140 Tetrode 150 +20] +3/8 +8 _ 6 0.2 _ -1.5 | 12,000 |5 0.02| 18 3.0 | 200 4 4 SN 144 Tetrode 150 +20 10 +8 _~ 6 0.2 _ 15 | 10,000 75 0.02] 16 3.0 7 200 4 4 3N 142 Triode 100 +20] +1/8 _ 10 ff00pA} 1.5 _ 7,500 15.5 | 0.12] 17 4 100 4 4 3N 143 Triode 330 +20) +41/8 _ 20 0.5 _ 3.5 _ 6,000 | 5.5 $0.12] 13.5) _ 4 2 3N 152 Triode 300 +20 +10 _ 10 1TpA} 1.5 _ 7,500 } 5.5 | 0.12] 20 2.5 { 200 4 2 # 3N 153 Triode 300 +20 10 _ 6 [380pA _ -/8e 225 | 10,000 | 6.0 | 0.5 |{[- 4 2 3N 154 Triode 300 +20 +10 _ _ 10 |50pA _ 1.5 _ 7,500 | 5.5 | 0.12} 20 3.5 | 200 4 2 3N 159 Tetrode 400 +20] 8/+20] 8/+20 +20 18 1.0 _ 2.0 |10,000/5.5 | .02| 18 2.5 _ 4 4 3N 187 Tetrode | 330 +20] 6/+3] 6/+3 _ 15 30 _ 4.0 | 12,000 | 6.0 | 0.02] 18 3.5 | 200 4 4 *3N 192 Triode 225 +20 +6 _ +30/6 5 5* |-.3/4 | 18,000 | 2.0 | 0.4 |] 25 _ 4 2 *3N 193 Triode 225 +20 +6 +30/6 5 5* |-.3/4 {15,000 | 3.0 | 0.4 | 29 4 2 #*3N 200 Tetrode | 300 +20] 6/+3] 6/+3 _ 5 30* _ 3.0 | 15,000 | 6.0 | 0.021 12.5] 4.5 | 400 4 4 *3N 201 Tetrode 360 +25 +30 30 _ 15 7* 3.5 413,000 | | 0.02] 18 | 200 4 4 *3N 202 Tetrode 360 +25 +30 -30 15 +7* _ 3.5 | 13,000 ; | 0.02] 18 4.0 | 200 4 4 *3N 203 Tetrode 360 +25 +30 30 _ 15 +7* _ 3.5 12,000 | | 0.02/ 25 5.0 45 4 4 * Diode Protected Gate. * Grille protge par dicde. * Gate mit Diode geschitzt. e Vcs (cutoff) e Ves (coupe) e Ves Abschntirsspannung +2nA substrate not connected. +2nA substrat non connect. +2nA (Substrat nicht angeschlossen). 4 Specified in four (4) resistance ranges. 4 Spcifi dans quatre (4) gammes de 4 Eingeteilt in 4 Widerstandbereiche. Both gates for tetrode types. rsistance. = Zwei gates fiir Tetrode-Typen. = Deux gates pour type tetrode. t Vorzugstyp. Ab Lager lieferbar. # Preferred type. Available from stock. # Type preferable. Disponible au magasin. 16