SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices' SPF-2086T is a high performance 0.25m pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300m device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications. Product Features * 22 dB Gmax at 1.9 GHz * 0.4 dB FMIN at 1.9 GHz * +32 dBm Output IP3 * +20 dBm Output Power at 1dB Compression Typical Gain Performance 35 3v, 20mA 5v, 40mA 30 Gain, Gmax (dB) 0.1 - 12 GHz Operation 25 20 Gmax 15 10 Applications * LNA for Analog and Digital Wireless Systems * 3G, Cellular, PCS * Fixed Wireless, Pager Systems * Driver Stage for low power applications Gain 5 0 0 2 4 6 8 10 12 Frequency (GHz) D evice C haracteristics, T = 25C VDS=3V, IDQ=20mA (unless otherw ise noted) Test C ondition [1] = 100% Tested Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* f f f f S 21 Inserti on Gai n ZS=ZL= 50 Ohms f = 1.9 GHz FMIN Mi ni mum Noi se Fi gure ZS=OPT , ZL=ZLOPT f f f f OIP3 Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT P 1dB Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Symbol Gmax U nits Min. Typ. Max. dB dB dB dB 16.8 8.4 25.2 21.8 18.7 9.3 - dB 16.0 17.7 19.4 dB dB dB dB - 0.3 0.4 0.5 0.7 - VDS=5.0V, IDQ=40mA VDS=3.0V, IDQ=20mA dB m dB m - 32 28 - VDS=5.0V, IDQ=40mA VDS=3.0V, IDQ=20mA dB m dB m - 20 15 - = = = = = = = = 0.9 GHz 1.9 GHz 4.0 GHz [1] 12.0 GHz [1] 1 2 4 6 [1] GHz GHz GHz GHz IDSS Saturated D rai n C urrent VDS = VDSP, VGS= 0V mA 30 85 140 gm Tranconductance: VDS = VDSP, VGS= -0.25V mS - 112 - VP Pi nch-Off Voltage: VDS = 2.0V, IDS = 150A [1] V -1.5 -1.0 -0.5 BVGS Gate-to-Source Breakdown Voltage IGS = 0.3mA, drai n open [1] V - -17 -8 BVGD Gate-to-D rai n Breakdown Voltage IGD = 0.3mA, VGS = -3.0V [1] V - -17 -8 C /W - 110 - Rth Thermal Resi stance, juncti on-to-lead o The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101189 Rev E SPF-2086T Low Noise FET Absolute Maximum Ratings Operation of this device beyond any one of these parameters may cause permanent damage. Parameter Symbol Value U nit IDS IDSS mA Forward Gate C urrent IGSF 0.3 mA Reverse Gate C urrent IGSR 0.3 mA D rai n-to-Source Voltage VDS +7 V Gate-to-D rai n Voltage VGD -8 V Gate-to-Source Voltage VGS <-5 or >0 V D rai n C urrent MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the operating conditions should also satisfy the following experssions: PDC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (C) TL = Lead Temperature (pin 4) (C) RTH = Thermal Resistance (C/W) RF Input Power PIN 100 mW Operati ng Temperature TOP -40 to +85 C Storage Temperature Range Tstor -40 to +150 C Power D i ssi pati on PDISS 600 mW TJ +150 C C hannel Temperature Noise parameters, at typical operating frequencies Bias VDS=3.0V, IDS=20mA FREQ GHZ FMIN dB |G OPT| G OPT ANG rN W GA dB 1.0 0.28 0.74 17 0.22 23.1 2.0 0.44 0.69 31 0.18 17.8 4.0 0.54 0.54 84 0.09 13.9 6.0 0.70 0.28 179 0.05 12.2 Bias VDS=5.0V, IDS=40mA FREQ GHZ FMIN dB |G OPT| G OPT ANG rN W GA dB 1.0 0.34 0.76 19 0.27 23.9 2.0 0.55 0.67 36 0.23 19.1 4.0 0.75 0.47 93 0.11 15.0 6.0 1.04 0.31 -170 0.06 12.9 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101189 Rev E SPF-2086T Low Noise FET Scattering Parameters: Typical S-parameters VDS=3.0V, IDS=20 mA Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang 0.5 0.97 -17.5 8.07 162.9 0.01 55.5 0.66 -10.0 1.0 0.92 -34.2 7.76 146.1 0.03 72.8 0.64 -18.9 1.5 0.85 -50.9 7.40 130.4 0.04 62.9 0.61 -27.5 2.0 0.76 -69.2 7.06 114.9 0.05 52.7 0.57 -36.6 2.5 0.67 -89.6 6.67 99.4 0.06 45.3 0.51 -46.7 3.0 0.58 -109.6 6.16 85.3 0.06 39.6 0.47 -55.4 3.5 0.51 -128.5 5.64 72.4 0.07 33.2 0.44 -62.2 4.0 0.46 -146.4 5.16 60.5 0.08 27.3 0.42 -68.0 4.5 0.42 -165.0 4.74 49.3 0.08 23.0 0.39 -73.9 5.0 0.40 175.1 4.37 38.2 0.09 18.9 0.36 -81.1 5.5 0.41 155.0 4.04 27.3 0.09 14.6 0.32 -90.9 6.0 0.44 137.1 3.71 16.7 0.10 9.5 0.29 -102.9 6.5 0.48 123.1 3.43 6.6 0.10 5.3 0.26 -115.7 7.0 0.51 111.6 3.18 -2.9 0.10 1.2 0.23 -128.5 7.5 0.54 101.5 2.96 -11.9 0.11 -2.1 0.21 -141.7 8.0 0.57 91.8 2.75 -21.0 0.11 -5.6 0.20 -156.2 8.5 0.60 83.7 2.55 -29.5 0.12 -9.3 0.19 -170.9 9.0 0.63 77.5 2.40 -37.4 0.12 -13.0 0.20 172.1 9.5 0.66 71.4 2.26 -45.8 0.13 -17.5 0.22 154.7 10.0 0.69 66.3 2.13 -54.0 0.14 -22.1 0.24 140.5 10.5 0.70 61.1 2.02 -62.0 0.14 -26.8 0.27 128.5 11.0 0.71 55.7 1.92 -69.9 0.15 -30.9 0.29 119.0 11.5 0.72 50.1 1.81 -77.4 0.15 -35.0 0.31 109.5 12.0 0.75 45.0 1.70 -84.6 0.16 -39.7 0.33 99.8 12.5 0.76 40.3 1.60 -91.7 0.16 -44.1 0.35 90.3 13.0 0.77 36.4 1.51 -98.6 0.16 -47.5 0.39 81.2 13.5 0.77 32.9 1.47 -106.0 0.17 -51.7 0.43 75.0 Note : De-embedded to device pins 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101189 Rev E SPF-2086T Low Noise FET Scattering Parameters: Typical S-parameters VDS=5.0V, IDS=40 mA Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang 0.5 0.97 -18.2 8.87 162.0 0.01 92.8 0.68 -9.5 1.0 0.91 -35.9 8.47 144.6 0.02 66.4 0.67 -18.1 1.5 0.83 -53.3 8.00 128.4 0.03 60.3 0.64 -26.2 2.0 0.74 -72.2 7.54 112.6 0.04 54.0 0.60 -34.5 2.5 0.64 -92.9 7.06 97.1 0.05 46.6 0.55 -43.3 3.0 0.55 -113.4 6.46 83.2 0.06 40.7 0.51 -50.9 3.5 0.48 -132.3 5.87 70.5 0.06 35.9 0.48 -57.2 4.0 0.43 -150.3 5.35 58.8 0.07 31.9 0.46 -62.6 4.5 0.39 -169.1 4.89 47.9 0.07 27.9 0.44 -68.1 5.0 0.37 170.9 4.50 37.0 0.08 25.5 0.42 -75.1 5.5 0.39 151.2 4.16 26.3 0.08 22.1 0.38 -84.3 6.0 0.43 134.3 3.83 15.9 0.09 17.2 0.35 -95.0 6.5 0.47 121.0 3.54 6.0 0.09 13.3 0.32 -106.2 7.0 0.50 110.1 3.29 -3.6 0.10 9.6 0.30 -117.6 7.5 0.53 100.4 3.07 -12.7 0.10 5.7 0.28 -129.3 8.0 0.56 91.3 2.86 -21.8 0.11 2.4 0.26 -141.5 8.5 0.59 83.3 2.66 -30.2 0.12 -0.8 0.25 -154.6 9.0 0.63 77.2 2.52 -38.3 0.13 -4.6 0.26 -170.3 9.5 0.66 71.5 2.38 -46.8 0.13 -9.5 0.27 172.9 10.0 0.69 66.6 2.24 -55.1 0.14 -14.2 0.29 157.4 10.5 0.70 61.3 2.12 -63.3 0.15 -19.5 0.31 144.0 11.0 0.71 55.7 2.01 -71.4 0.15 -24.4 0.33 133.5 11.5 0.73 50.2 1.90 -79.0 0.16 -29.2 0.35 123.1 12.0 0.75 45.0 1.78 -86.4 0.16 -33.8 0.36 112.6 12.5 0.77 40.3 1.67 -93.7 0.17 -37.9 0.38 102.0 13.0 0.77 36.3 1.58 -100.9 0.17 -42.2 0.42 91.7 13.5 0.78 32.7 1.53 -108.4 0.18 -46.7 0.46 83.7 Note : De-embedded to device pins 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101189 Rev E SPF-2086T Low Noise FET Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Reel Siz e Devices/Reel SPF-2086T 7" 1000 Part Symbolization The part will be symbolized with the "P2T" designator and a dot signifying pin 1 on the top surface of the package. PCB Pad Layout Pin Designation P2T 1 Gate 2 Source 3 Drain 4 Source Package Dimensions P2T 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101189 Rev E