2N6757 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) FEATURES * V(BR)DSS = 150V * ID = 8.0A 3 (case) * RDSON = 0.6 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO-3 PACKAGE (TO-204AA) Underside View PIN 1 - Gate PIN 2 - Source CASE - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS VGS Drain-Source Voltage Gate-Source Voltage ID Drain Current Continuous TCase = 25C TCase = 100C IDM Drain Current Pulsed PD Total Device Dissipation @ TCase = 25C TCase = 100C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Thermal Resistance Junction to Case RJC RJA Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.6mm from Case for 10 secs. 150V 20V 8A 5A 12A 75W 30W -55 to +150C 1.67C/W 30C/W 300C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6408 Issue 1 2N6757 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Test Conditions Min. Drain-Source Breakdown Voltage VGS = 0 ID = 1.0mA 150 VGS(th) Gate Thresshold Voltage VDS=VGS ID = 1.0mA 2.0 IGSS Gate-Source Leakage VDS = 0 VGS = 20V V(BR)DSS IDSS Zero Gate Voltage Drain Current rDS(on) Drain-Source On-Resistance1 Transconductance1 gfs Ciss Forward Coss Output capacitance Input Capacitance Crss Reverse Transfer Capacitance td (on) Turn-On Delay Time tr RiseTime td (ofF) Turn off Delay Time tf FallTime Typ. Max. Unit 4.0 100 VDS =150V 0.1 1.0 0.2 4.0 0.4 0.6 VGS = 10V Tj = 125C ID = 5A VDS = >15V ID = 6A 3.0 5.0 9.0 VDS = 25V VGS = 0 350 600 800 100 250 450 40 80 150 VGS = 0 f = 1.0MHZ VDD = 90V 30 ID = 6A 50 RG = 15 50 V nA mA s( ) pF ns 40 SOURCE DRAIN DIODE RATING CHARACTERISTICS VSD Diode Forward Voltage1 IS Continues Current VGS = 0 IS = 8A Pulsed trr Reverse Recovery Time Qrr Reverse Recovered Charge 1.50 8.0 Current2 ISM 0.75 V A 12 Tj = 150C dIF/dT = 100A/S IF = 12A 650 ns 10 C 1) Pulse test : Pulse Width < 300s ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6408 Issue 1