SILICON PLANAR NPN VHF/UHF AMPLIFIER The 2N 5179 is a silicon planar epitaxial NPN transistor in Jedec TO-72 metal case, intended for low-noise tuned-amplifier and converter applications up to 500 MHz. ABSOLUTE MAXIMUM RATINGS VcsBo Collector-base voltage (I~ = 0) 20 Vv Veo Collector-emitter voltage (I_ = 0) 12 Vv VesBo Emitter-base voltage (I; = 0) 2.5 Vv le Collector current 50 mA Prot Total power dissipation at Tamp < 25C 200 mW at Tease & 25C 300 mW Tstgs Tj Storage and junction temperature -65 to 200 C MECHANICAL DATA Dimensions in mm 7/76 296 THERMAL DATA Rin j-case Thermal! resistance junction-case max 583 C/W th -amb Thermal resistance junction-ambient max 875 C/W ELECTRICAL CHARACTERISTICS (Tamp= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.) Unit lego Collector cutoff current] Vcg= 15V 20; nA (te =90) Vep= 15V Tamp = 150C 1] MA Vierycao Collectorbase Ic =1yA 20 Vv breakdown voltage (le =90) Veeo (sus) Collector-emitter le =3mA 12 Vv sustaining voltage (lg =0) VieryeBo Emitter-base le =10MA 2.5 Vv breakclown voltage (Ic = 9) Veegaty Collector~emitter le =10mA Ig =1mMmA 0.4) V saturation voltage Veegat) Base-emitter le =10mA Ig =1mA 1] V saturation voltage Nee DC current gain If =3mA VcE=1V 25 70 250) - Nte Small signal current le =2mA Vce= 6V gain f=1kHz 25 90 300] fy Transition frequency lo =5mMA Vee 6V f = 100 MHz 0.9 1.4 2 |GHz -C Reverse capacitance le =0 VeE= 6V 6 f= 1MHz cr 0.7 1 pF NF Noise figure le =15MA Vee= 6V f=200MHz R,=1252 3 4.5) dB Goe Power gain le =5mA Vee= 12V (neutralized) f=200MHz R,=502 15 21 dB P, Oscillator power outputll_ =12mMA Veg = 10V f = 500 MHz 20 mW lap Cpe Feedback time 16 =2mA Veg 6V constant f = 31.9 MHz 3 7 141 ps 297