DMS2220LFW-7 - Diodes - Datasheet.Directory

DMS2220LFW

Document number: DS31547 Rev. 8 - 2 1 of 6

www.diodes.com March 2009

DMS2220LFW

NEW PRODUCT

SBR is a registered trademark of Diod es Incorporated.

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

Features

• Low On-Resistance

• 95mΩ @VGS = -4.5V

• 120mΩ @VGS = -2.5V

• 86mΩ (typ) @VGS = -1.8V

• Low Gate Threshold Voltage, -1.3V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Incorporates Low VF Super Barrier Rectifier (SBR)

• Low Profile, 0.5mm Max Height

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: DFN3020-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.011 grams (approximate)

Maximum Ratings – TOTAL DEVICE @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 1) PD 1.5 W

Thermal Resistance, Junction to Ambient R

θ

JA 85 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Maximum Ratings – P-CHANNEL MOSFET – Q1 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -20 V

Gate-Source Voltage VGSS ±12 V

Drain Current (Note 1) ID -2.9 A

Pulsed Drain Current (Note 4) IDM -10 A

Maximum Ratings – SBR – D1 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR 35 V

RMS Reverse Voltage VR

(

RMS

)

25 V

Average Rectified Output Current IO 1 A

Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimposed on rated load IFSM 3 A

Notes: 1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Repetitive rating, pulse width limited by junction temperature.

DFN3020-8

Pin Configuration

Top View

Internal Schematic Bottom View

Bottom View

G

AK

S

D

A

K

D

Top View

G

AK

S

AK

D

DMS2220LFW

Document number: DS31547 Rev. 8 - 2 2 of 6

www.diodes.com March 2009

DMS2220LFW

NEW PRODUCT

SBR is a registered trademark of Diod es Incorporated.

Electrical Characteristics – P-CHANNEL MOSFET – Q1 @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V

Gate-Source Leakage IGSS ⎯

⎯ ⎯

⎯ ±100

±800 nA VGS = ±8V, VDS = 0V

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS

(

th

)

-0.45 ⎯ -1.3 V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS (ON) ⎯

⎯

60

74

86

95

120

⎯ mΩ VGS = -4.5V, ID = -2.8A

VGS = -2.5V, ID = -2.0A

VGS = -1.8V, ID = -1.0A

Forward Transfer Admittance |Yfs| ⎯ 8 ⎯ S VDS = -5V, ID = -2.8A

Diode Forward Voltage (Note 5) VSD ⎯ 0.7 -1.2 V VGS = 0V, IS = -1.6A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss ⎯ 632 ⎯ pF VDS = -10V, VGS = 0V

f = 1.0MHz

Output Capacitance Coss ⎯ 65 ⎯ pF

Reverse Transfer Capacitance Crss ⎯ 54 ⎯ pF

Electrical Characteristics – SBR – D1 @ TA = 25ºC unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 5) V

(

BR

)

R 35 40 ⎯ V IR = 1mA

Forward Voltage VF ⎯

⎯ ⎯

⎯ 0.42

0.49 V IF = 0.5A

IF = 1.0A

Reverse Current (Note 5) IR ⎯ ⎯ 100 μA VR = 20V

Notes: 5. Short duration pulse test used to minimize self-heating effect.

Q1, P-CHANNEL MOSFET

01 2 3 45

Fig . 1 Typica l O ut put Charact er i st ics

-V , DRAIN-SOURCE VOLTAGE (V)

DS

0

2

4

6

8

10

-I , D

R

AI

N

C

U

R

E

N

T

(A)

D

V = -1.5V

GS

V = -2.0V

GS

V = -2.5V

GS

V = -4.5V

GS

V = -8.0V

GS

V = -1.0V

GS

V = -1.2V

GS

0.5 1 1.5 2

0

2

4

6

8

10

-I , D

R

AIN

C

U

R

EN

T

(A)

D

Fig. 2 Typical Transfer Characteristics

-V , GATE SOURCE VOLTAGE (V)

GS

V = -5V

DS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 125°C

A

DMS2220LFW

Document number: DS31547 Rev. 8 - 2 3 of 6

www.diodes.com March 2009

DMS2220LFW

NEW PRODUCT

SBR is a registered trademark of Diod es Incorporated.

Q1, P-CHANNEL MOSFET - Continued

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

012345678

Fig. 3 Typical On-Resistance

vs . Dr ai n Cu rrent and Gate Voltage

-I , DRAIN CURRENT (A)

D

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

V = -2.5V

GS

V = -4.5V

GS

V = -1.8V

GS

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

012345678

-I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs . Dr ai n Cu rrent and Tem per ature

D

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 5 On-Resistance V ariation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = -4.5V

I = -5A

GS

D

V = -2.5V

I = -2A

GS

D

0.03

0.05

0.07

0.09

0.11

Fig. 6 On-Resistance V ariation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = -4.5V

I = -5A

GS

D

V = -2.5V

I = -2A

GS

D

10

100

1,000

10,000

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

048121620

Fig. 7 Typical Capacitance

-V , DRAIN-SOURCE VOLTAGE (V)

DS

f = 1MHz

C

iss

C

oss

C

rss

Fig. 8 Gate Threshold V ariation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

-V ,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

I = -250µA

D

I = -1mA

D

DMS2220LFW

Document number: DS31547 Rev. 8 - 2 4 of 6

www.diodes.com March 2009

DMS2220LFW

NEW PRODUCT

SBR is a registered trademark of Diod es Incorporated.

Q1, P-CHANNEL MOSFET - Continued

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 9 Diode Forward Voltage vs. Current

0

2

4

6

8

10

-I , S

O

U

R

C

E

C

U

R

E

N

T

(A )

S

T = 25°C

A

D1, SBR

Fig. 10 Forward Power Dissipation

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0 0.5 1 1.5

I , AVERAGE FORWARD CURRENT (A)

F(AV)

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(W)

D

Fig. 11 Typical For ward Ch ar acterist ics

0.0001

0.001

0.01

0.1

1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 125°C

A

0.8

V , INST ANTANEOUS FORWARD VOLTAGE (V)

F

I , INSTANTANEOUS FORWARD CURRENT (A)

F

DMS2220LFW

Document number: DS31547 Rev. 8 - 2 5 of 6

www.diodes.com March 2009

DMS2220LFW

NEW PRODUCT

SBR is a registered trademark of Diod es Incorporated.

D1, SBR - Continued

Fig. 12 Typical Reverse Characteristics

0.01

0.1

1

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V , INSTANT ANEOUS REVERSE VOL TAGE (V)

R

I , INST ANTANEOUS REVERSE CURRENT(uA)

R

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 125°C

A

Fig. 13 Total Capacitance vs. Reverse V oltage

V , DC REVERSE VOLTAGE (V)

R

1

10

100

1,000

10,000

0.1 1 10 100

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

f = 1MHz

Fig. 14 Forward Current Derating Curve

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

25 50 75 100 125 150 175

T , AMBIENT TEMPERA TURE (°C)

A

I , AVERAGE FORWARD CURRENT (A)

F(AV)

Note 2

Fig. 15 Operating Temperature Derating

0

25

50

75

100

125

150

010203040

V , DC REVERSE VOLTAGE (V)

R

T , DERA TED AMBIENT TEMPERATURE (°C)

A

Ordering Information (Note 6)

Part Number Case Packaging

DMS2220LFW-7 DFN3020-8 3000/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ME = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

YM

ME

DMS2220LFW

Document number: DS31547 Rev. 8 - 2 6 of 6

www.diodes.com March 2009

DMS2220LFW

NEW PRODUCT

SBR is a registered trademark of Diod es Incorporated.

Package Outline Dimensions

Suggested Pad Layout

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages. LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

DFN3020-8

Dim Min Max Typ

A 0.77 0.83 0.80

A1 0 0.05 0.02

A3 - - 0.15

b 0.25 0.35 0.30

D 2.95 3.075 3.00

D1 0.90 1.10 1.00

e - - 0.65

E 1.95 2.075 2.00

E1 0.80 1.00 0.90

L 0.30 0.40 0.35

Z - - 0.375

All Dimensions in mm

Dimensions Value (in mm)

C 0.650

G 0.600

G1 0.450

G2 0.150

R 0.150

X 0.390

X1 1.000

Y 0.550

Y1 0.900

be

E1

D1

L

D

E

A

Z

A1

A3

XC

Y1

Y

X1

R

G2

X1

G1 Y1 G

G