Data Sheet
1
Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
General Description
The AP2120 series are positive voltage regulator ICs
fabricated by CMOS process. Each of these ICs con-
sists of a voltage reference, an error amplifier, a resis-
tor network for setting output voltage, a current limit
circuit for current protection.
The AP2120 series feature high supply voltage ripple
rejection, low dropout voltage, low noise, high output
voltage accuracy, and low current consumption which
make them ideal for use in various battery-powered
devices.
The AP2120 series have 1.2V, 1.3V, 1.5V, 1.8V, 2.5V,
2.8V, 3.0V, 3.2V, 3.3V, 3.6V, 4.0V and 5.0V versions.
The AP2120 are available in standard SOT-23, SOT-89
and TO-92 packages.
Features
·Low Dropout Voltage at IOUT=100mA: 200mV
Typical (Except 1.2V, 1.3V and 1.5V Versions)
·Low Quiescent Current: 25μA Typical
·High Ripple Rejection: 65dB Typical （f=1kHz）
·Output Current: More Than 150mA (250mA
Limit)
·Extremely Low Noise: 15μVrms@VOUT=1.2V,
1.3V, 1.5V (10Hz to 100kHz)
·Excellent Line Regulation: 4mV Typical
·Excellent Load Regulation: 12mV Typical
·High Output Voltage Accuracy: ±2%
·Excellent Line Transient Response and Load
Transient Response
·Compatible with Low ESR Ceramic Capacitor (as
Low as 1μF)
Applications
·Mobile Phones, Cordless Phones
·Wireless Communication Equipment
·Portable Games
·Cameras, Video Recorders
·Sub-board Power Supplies for Telecom Equip-
ment
·Battery Powered Equipment
Figure 1. Package Types of AP2120
SOT-23 TO-92 (Bulk Packing) TO-92 (Ammo Packing)
SOT-89
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Pin Configuration
Figure 2. Pin Configuration of AP2120 (Top View)
VOUT
N/NA Package
(SOT-23)
VIN
GND
Pin Description
Pin Number
Pin Name Function
SOT-23 (N) SOT-23 (NA) SOT-89/
TO-92
1 3 1 GND Ground
223V
OUT Regulated Output Voltage
312V
IN Input Voltage
3
2
1
N
NA
VOUT
VIN
3
2
1
GND
1
2
3
1
2
3
Z Package
(TO-92 (Bulk Packing))
123
Z Package
(TO-92 (Ammo Packing))
GND
VIN
VOUT
VIN
GND
VOUT
VIN
GND
R Package
(SOT-89)
VOUT
Data Sheet
3
Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2120
VREF
CURRENT LIMIT
VIN VOUT
GND
1(3){1}
3(1){2} 2(2){3}
A(B){C}
A for SOT-23 (N)
B for SOT-23 (NA)
C for SOT-89/TO-92
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Ordering Information
Package Temperature Range Output Voltage Part Number Marking ID Packing Type
SOT-23 -40 to 85oC
1.2V(N) AP2120N-1.2TRG1 GR4 Tape & Reel
1.3V(N) AP2120N-1.3TRG1 GR5 Tape & Reel
1.5V(N) AP2120N-1.5TRG1 GR6 Tape & Reel
1.8V(N) AP2120N-1.8TRG1 GR7 Tape & Reel
2.5V(N) AP2120N-2.5TRG1 GR8 Tape & Reel
2.8V(N) AP2120N-2.8TRG1 GR9 Tape & Reel
3.0V(N) AP2120N-3.0TRG1 GS2 Tape & Reel
3.2V(N) AP2120N-3.2TRG1 GS3 Tape & Reel
3.3V(N) AP2120N-3.3TRG1 GS4 Tape & Reel
3.6V(N) AP2120N-3.6TRG1 GZ8 Tape & Reel
4.0V(N) AP2120N-4.0TRG1 GZ9 Tape & Reel
5.0V(N) AP2120N-5.0TRG1 GS5 Tape & Reel
SOT-23 -40 to 85oC
3.3V(NA) AP2120NA-3.3TRG1 GZ1 Tape & Reel
3.6V(NA) AP2120NA-3.6TRG1 GAA Tape & Reel
4.0V(NA) AP2120NA-4.0TRG1 GBA Tape & Reel
SOT-89 -40 to 85oC
1.2V AP2120R-1.2TRG1 G13Q Tape & Reel
1.3V AP2120R-1.3TRG1 G17Q Tape & Reel
1.5V AP2120R-1.5TRG1 G22Q Tape & Reel
1.8V AP2120R-1.8TRG1 G27Q Tape & Reel
Circuit Type
Package
TR: Tape and Reel or Ammo
1.5: Fixed Output 1.5V
2.5: Fixed Output 2.5V
N/NA: SOT-23
3.0: Fixed Output 3.0V
1.8: Fixed Output 1.8V
2.8: Fixed Output 2.8V
3.2: Fixed Output 3.2V
1.3: Fixed Output 1.3V
1.2: Fixed Output 1.2V
G1: Green
3.3: Fixed Output 3.3V
5.0: Fixed Output 5.0V
AP2120 -
3.6: Fixed Output 3.6V
4.0: Fixed Output 4.0V
Z: TO-92
R: SOT-89
Blank: Bulk
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BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Ordering Information (Continued)
Package Temperature Range Output Voltage Part Number Marking ID Packing Type
SOT-89 -40 to 85oC
2.5V AP2120R-2.5TRG1 G28Q Tape & Reel
2.8V AP2120R-2.8TRG1 G31Q Tape & Reel
3.0V AP2120R-3.0TRG1 G33Q Tape & Reel
3.2V AP2120R-3.2TRG1 G37Q Tape & Reel
3.3V AP2120R-3.3TRG1 G41Q Tape & Reel
3.6V AP2120R-3.6TRG1 G42Q Tape & Reel
4.0V AP2120R-4.0TRG1 G43Q Tape & Reel
5.0V AP2120R-5.0TRG1 G70Q Tape & Reel
TO-92 -40 to 85oC
1.2V AP2120Z-1.2G1 2120Z-1.2G1 Bulk
1.2V AP2120Z-1.2TRG1 2120Z-1.2G1 Ammo
1.3V AP2120Z-1.3G1 2120Z-1.3G1 Bulk
1.3V AP2120Z-1.3TRG1 2120Z-1.3G1 Ammo
1.5V AP2120Z-1.5G1 2120Z-1.5G1 Bulk
1.5V AP2120Z-1.5TRG1 2120Z-1.5G1 Ammo
1.8V AP2120Z-1.8G1 2120Z-1.8G1 Bulk
1.8V AP2120Z-1.8TRG1 2120Z-1.8G1 Ammo
2.5V AP2120Z-2.5G1 2120Z-2.5G1 Bulk
2.5V AP2120Z-2.5TRG1 2120Z-2.5G1 Ammo
2.8V AP2120Z-2.8G1 2120Z-2.8G1 Bulk
2.8V AP2120Z-2.8TRG1 2120Z-2.8G1 Ammo
3.0V AP2120Z-3.0G1 2120Z-3.0G1 Bulk
3.0V AP2120Z-3.0TRG1 2120Z-3.0G1 Ammo
3.2V AP2120Z-3.2G1 2120Z-3.2G1 Bulk
3.2V AP2120Z-3.2TRG1 2120Z-3.2G1 Ammo
3.3V AP2120Z-3.3G1 2120Z-3.3G1 Bulk
3.3V AP2120Z-3.3TRG1 2120Z-3.3G1 Ammo
3.6V AP2120Z-3.6G1 2120Z-3.6G1 Bulk
3.6V AP2120Z-3.6TRG1 2120Z-3.6G1 Ammo
4.0V AP2120Z-4.0G1 2120Z-4.0G1 Bulk
4.0V AP2120Z-4.0TRG1 2120Z-4.0G1 Ammo
5.0V AP2120Z-5.0G1 2120Z-5.0G1 Bulk
5.0V AP2120Z-5.0TRG1 2120Z-5.0G1 Ammo
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Parameter Symbol Value Unit
Input Voltage VIN 6.5 V
Enable Input Voltage VCE -0.3 to VIN+0.3 V
Output Current IOUT 300 mA
Junction Temperature TJ150 oC
Storage Temperature Range TSTG -65 to 150 oC
Lead Temperature (Soldering, 10sec) TLEAD 260 oC
Thermal Resistance (Note 2) θJA
SOT-23 250
oC/W
SOT-89 165
TO-92 180
ESD (Human Body Model) ESD 2000 V
ESD (Machine Model) ESD 200 V
Absolute Maximum Ratings (Note 1)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-
perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) -
TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Parameter Symbol Min Max Unit
Input Voltage VIN 26 V
Operating Junction Temperature Range TJ -40 85 oC
Recommended Operating Conditions
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BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Electrical Characteristics
AP2120-1.2 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=2.2V
1mA≤IOUT≤30mA 1.176 1.2 1.224 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=2.2V
1mA≤IOUT≤80mA 12 40 mV
Line Regulation VRLINE
2.2V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 700 900
mV
IOUT=100mA 700 900
IOUT=150mA 700 900
IOUT=200mA 700 900
Quiescent Current IQVIN=2.2V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=2.2V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±120 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC, IOUT=0
10Hz ≤f≤100kHz
15 μVrms
(VIN=2.2V, TJ=25oC, CIN=1μF, COUT=1μF,
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o
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unless otherwise specified.)
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Electrical Characteristics (Continued)
AP2120-1.3 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=2.3V
1mA≤IOUT≤30mA 1.274 1.3 1.326 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=2.3V
1mA≤IOUT≤80mA 12 40 mV
Line Regulation VRLINE
2.3V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 600 800
mV
IOUT=100mA 600 800
IOUT=150mA 600 800
IOUT=200mA 600 800
Quiescent Current IQVIN=2.3V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=2.3V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±130 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC, IOUT=0
10Hz ≤f≤100kHz
15 μVrms
(VIN=2.3V, TJ=25oC, CIN=1μF, COUT=1μF,
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C
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o
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unless otherwise specified.)
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BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
AP2120-1.5 Electrical Characteristics
Electrical Characteristics (Continued)
(VIN=2.5V, TJ=25oC, CIN=1μF, COUT=1μF,
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typeface applies over
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C
≤
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o
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unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=2.5V
1mA≤IOUT≤30mA 1.47 1.5 1.53 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=2.5V
1mA≤IOUT≤80mA 12 40 mV
Line Regulation VRLINE
2.3V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 400 600
mV
IOUT=100mA 400 600
IOUT=150mA 400 600
IOUT=200mA 400 600
Quiescent Current IQVIN=2.5V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=2.5V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±150 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC, IOUT=0
10Hz ≤f≤100kHz
15 μVrms
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Electrical Characteristics (Continued)
AP2120-1.8 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=2.8V
1mA≤IOUT≤30mA 1.764 1.8 1.836 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=2.8V
1mA≤IOUT≤80mA 12 40 mV
Line Regulation VRLINE
2.3V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=2.8V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=2.8V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±180 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz 30 μVrms
(VIN=2.8V, TJ=25oC, CIN=1μF, COUT=1μF,
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C
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o
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unless otherwise specified.)
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BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Electrical Characteristics (Continued)
AP2120-2.5 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=3.5V
1mA≤IOUT≤30mA 2.45 2.5 2.55 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=3.5V
1mA≤IOUT≤80mA 12 40 mV
Line Regulation VRLINE
3V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=3.5V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=3.5V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±250 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz 30 μVrms
(VIN=3.5V, TJ=25oC, CIN=1μF, COUT=1μF,
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C
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J
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85
o
C,
unless otherwise specified.)
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Electrical Characteristics (Continued)
AP2120-2.8 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=3.8V
1mA≤IOUT≤30mA 2.744 2.8 2.856 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=3.8V
1mA≤IOUT≤80mA 12 40 mV
Line Regulation VRLINE
3.3V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=3.8V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=3.8V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±280 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz 30 μVrms
(VIN=3.8V, TJ=25oC, CIN=1μF, COUT=1μF,
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typeface applies over
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o
C
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o
C,
unless otherwise specified.)
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BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Electrical Characteristics (Continued)
AP2120-3.0 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=4V
1mA≤IOUT≤30mA 2.94 3.0 3.06 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=4V
1mA≤IOUT≤80mA 12 40 mV
Line Regulation VRLINE
3.5V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=4V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=4V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±300 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz
30 μVrms
(VIN=4V, TJ=25oC, CIN=1μF, C OUT=1μF,
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o
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unless otherwise specified.)
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Electrical Characteristics (Continued)
AP2120-3.2 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=4.2V
1mA≤IOUT≤30mA 3.136 3.2 3.264 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=4.2V
1mA≤ IOUT≤ 80mA 12 40 mV
Line Regulation VRLINE
3.7V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=4.2V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=4.2V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±320 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz 30 μVrms
(VIN=4.2V, TJ=25oC, CIN=1μF, COUT=1μF,
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C
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o
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unless otherwise specified.)
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BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
AP2120-3.3 Electrical Characteristics
Electrical Characteristics (Continued)
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=4.3V
1mA≤IOUT≤30mA 3.234 3.3 3.366 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=4.3V
1mA≤ IOUT≤ 80mA 12 40 mV
Line Regulation VRLINE
3.8V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=4.3V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=4.3V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±330 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz 30 μVrms
(VIN=4.3V, TJ=25oC, CIN=1μF, COUT=1μF,
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-40
o
C
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J
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85
o
C,
unless otherwise specified.)
Data Sheet
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Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Electrical Characteristics (Continued)
AP2120-3.6 Electrical Characteristics
(VIN=4.6V, TJ=25oC, CIN=1μF, COUT=1μF,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
85
o
C,
unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=4.6V
1mA≤IOUT≤30mA 3.528 3.6 3.672 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=4.6V
1mA≤ IOUT≤ 80mA 12 40 mV
Line Regulation VRLINE
4.6V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=4.6V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=4.6V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±330 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz
30 μVrms
17
BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Electrical Characteristics (Continued)
AP2120-4.0 Electrical Characteristics
(VIN=5.0V, TJ=25oC, CIN=1μF, COUT=1μF,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
85
o
C,
unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=5.0V
1mA≤IOUT≤30mA 3.92 4.0 4.08 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=5.0V
1mA≤ IOUT≤ 80mA 12 40 mV
Line Regulation VRLINE
5V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=5.0V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=5.0V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±330 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz 30 μVrms
Data Sheet
18
Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT
VIN=6.0V
1mA≤IOUT≤30mA 4.9 5.0 5.1 V
Input Voltage VIN 6V
Output Current IOUT VIN-VOUT=1V 150 mA
Load Regulation VRLOAD
VIN=4.3V
1mA≤ IOUT≤ 80mA 12 40 mV
Line Regulation VRLINE
5.5V≤VIN≤6V
IOUT=30mA 416mV
Dropout Voltage VDROP
IOUT=10mA 20 40
mV
IOUT=100mA 200 300
IOUT=150mA 300 500
Quiescent Current IQVIN=6.0V, IOUT=0mA 25 50 μA
Power Supply
Rejection Ratio PSRR Ripple 0.5Vp-p, f=1kHz
VIN=6.0V 65 dB
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
IOUT=30mA
±330 μV/oC
(ΔVOUT/VOUT)/ΔT ±100 ppm/oC
Short Current Limit ILIMIT VOUT=0V 50 mA
RMS Output Noise VNOISE TA=25oC
10Hz ≤f≤100kHz 30 μVrms
(VIN=6.0V, TJ=25oC, CIN=1μF, COUT=1μF,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
85
o
C,
unless otherwise specified.)
AP2120-5.0 Electrical Characteristics
Electrical Characteristics (Continued)
19
BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Typical Performance Characteristics
Figure 4. Output Voltage vs. Output Current
Figure 7. Quiescent Current vs. Output Current
Figure 6. Quiescent Current vs. Input Voltage
0.00 0.05 0.10 0.15 0.20 0.25 0.30
0.0
0.5
1.0
1.5
2.0
2.5
Output Voltage (V)
Output Current (A)
AP2120-2.5
TC=-40oC
TC=25oC
TC=85oC
VIN=3.5V
-40-20 0 20406080100120
2.490
2.495
2.500
2.505
2.510
2.515
2.520
2.525
2.530
2.535
Output Voltage (V)
Case Temperature (oC)
AP2120-2.5
IOUT=10mA
IOUT=50mA
IOUT=100mA
IOUT=150mA
VIN=3.5V
0.00 0.05 0.10 0.15 0.20
25
30
35
40
45
50
55
Quiescent Current (μA)
Output Current (A)
AP2120-2.5
TC=-40oC
TC=25oC
TC=85oC
VIN=3.5V
Figure 5. Output Voltage vs. Case Temperature
Data Sheet
20
Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Typical Performance Characteristics (Continued)
Figure 8. Quiescent Current vs. Case Temperature
Figure 10. Dropout Voltage vs. Case Temperature
Figure 9. Dropout Voltage vs. Output Current
Figure 11. Load Transient (IOUT=0 to 150mA)
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16
0
50
100
150
200
250
300
350
400
Dropout Voltage (V)
Output Current (A)
AP2120-2.5
TC=-40oC
TC=25oC
TC=85oC
-40 -20 0 20 40 60 80
0
50
100
150
200
250
300
350
400
450
Dropout Voltage (V)
Case Temperature (oC)
AP2120-2.5
IOUT=10mA
IOUT=80mA
IOUT=150mA
V
OUT
(50m /Div) I
OUT
(50mV/D iv)
0
50
-50
0
50
100
150
-100
Ω
AP2120-2.5
21
BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Typical Performance Characteristics (Continued)
Figure 13. PSRR vs. Frequency
Figure 12. Line Transient
Figure 14. Start-up
V
OUT
(50mV/Div) V
IN
( 1 V / D i v )
0
50
-50
2
1
0
(Condition:VIN=2.5V to 3.5,IOUT=10mA)
V
IN
(0.5V/Div)
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
0.5
0
1.0
1.5
2.0
2.5
V
OUT
(0.5V/Div)
AP2120-2.5
Input Voltage
Output Voltage
AP2120-2.5
IOUT=150mA
IOUT=10mA AP2120-2.5
3.0
Data Sheet
22
Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
VIN
AP2120-2.5
CIN
1μF
COUT
1μF
VOUT
VIN VOUT
GND
VIN=3.5V VOUT=2.5V
Typical Application
Figure 15. Typical Application of AP2120
Note: Filter capacitors are required at the AP2120's input and output. 1μF capacitor is required at the input. The
minimum output capacitance required for stability should be more than 1μF with ESR from 0.01Ω to 100Ω.
Ceramic capacitors are recommended.
23
BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Mechanical Dimensions
SOT-23 Unit: mm(inch)
2.300(0.091)
2.500(0.098)
1.200(0.047)
1.400(0.055)
0.920(0.036)
0.980(0.039)
0.390(0.015)
0.450(0.018)
1.900(0.075)REF
2.800(0.110)
3.000(0.118)
2.0°
3.0 °
0.500(0.020)
0.700(0.028)
1.050(0.041)REF 0.020(0.001)
0.100(0.004)
0.900(0.035)
1.100(0.043)
4×R0.100(0.004)
7.0°
7.0°
0.550(0.022)REF
0.200(0.008)MIN
0.100(0.004) GAUGE PLANE
0.080(0.003)
0.150(0.006)
R0.100(0.004)
0.0°~10.0°
Data Sheet
24
Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Mechanical Dimensions (Continued)
SOT-89 Unit: mm(inch)
45
1.030(0.041)REF
1.550(0.061)REF
4.400(0.173)
4.600(0.181)
0.900(0.035)
1.100(0.043)
3.950(0.156)
4.250(0.167)
3.000(0.118)
TYP
0.480(0.019)
2.300(0.091)
2.600(0.102)
0.320(0.013)
0.520(0.020)
310
2.060(0.081)REF
1.400(0.055)
1.600(0.063)
0.350(0.014)
0.450(0.018)
R0.150(0.006)
3
10
1.500(0.059)
0.320(0.013)REF
1.620(0.064)REF
2.210(0.087)REF
0.320(0.013)
0.520(0.020)
1.800(0.071)
25
BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
Data Sheet
Nov. 2012 Rev. 1. 2
Mechanical Dimensions (Continued)
TO-92 (Bulk Packing) Unit: mm(inch)
2.420(0. 095)
2.660(0.105)
0.360(0. 014)
0.760(0.030)
Φ
1.600(0.063)
MAX
12.500(0.492)
15.500(0.610)
1.270(0.050)
TYP
3.300(0.130)
3.700(0.146)
4.300(0.169)
4.700(0.185)
1.000(0.039)
1.400(0. 055)
4.400(0.173)
4.800(0.189)
3.430(0.135)
MIN
0.320(0.013)
0.510(0.020)
0.000(0.000)
0.380(0.015)
Data Sheet
26
Nov. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120
4.300(0.169)
4.700(0.185)
12.500(0.492)
14.500(0.571)
2.540(0.100)
Typ
1.270(0.050)
Typ
0. (0.015)
0.550(0.022 )
4.400(0.173
)
4.800(0.189
)
3.430(0.135)
MIN
0.320(0.013)
0. 510(0.020)
0.000(0.000)
0.380(0.015)
MAX
1. 100(0. 043
1. 400(0. 055
)
3.300(0.130)
3.800(0.150)
Φ
1.600(0.063)
)
380
2.500(0.098
)
4.000(0.157
)
13. 000(0. 512
)
15.000(0.591
)
TO-92 (Ammo Packing) Unit: mm(inch)
Mechanical Dimensions (Continued)
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277