8
LTC4412HV
Rev. B
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Introduction
The system designer will find the LTC4412HV useful in a
variety of cost and space sensitive power control applica-
tions that include low loss diode OR’ing, fully automatic
switchover from a primary to an auxiliary source of power,
microcontroller controlled switchover from a primary to
an auxiliary source of power, load sharing between two
or more batteries, charging of multiple batteries from a
single charger and high side power switching.
External P-Channel MOSFET Transistor Selection
Important parameters for the selection of MOSFETs are
the maximum drain-source voltage VDS(MAX), threshold
voltage VGS(VT) and on-resistance RDS(ON).
The maximum allowable drain-source voltage, VDS(MAX),
must be high enough to withstand the maximum drain-
source voltage seen in the application.
The maximum gate drive voltage for the primary MOSFET
is set by the smaller of the VIN supply voltage or the
internal clamping voltage VG(ON). A logic level MOSFET
is commonly used, but if a low supply voltage limits the
gate voltage, a sub-logic level threshold MOSFET should
be considered. The maximum gate drive voltage for the
auxiliary MOSFET, if used, is determined by the external
resistor connected to the STAT pin and the STAT pin sink
current.
As a general rule, select a MOSFET with a low enough
RDS(ON) to obtain the desired VDS while operating at full
load current and an achievable V
GS
. The MOSFET nor-
mally operates in the linear region and acts like a voltage
controlled resistor. If the MOSFET is grossly undersized,
it can enter the saturation region and a large VDS may
result. However, the drain-source diode of the MOSFET,
if forward biased, will limit VDS. A large VDS, combined
with the load current, will likely result in excessively
high MOSFET power dissipation. Keep in mind that the
LTC4412HV will regulate the forward voltage drop across
the primary MOSFET at 20mV if RDS(ON) is low enough.
The required RDS(ON) can be calculated by dividing 0.02V
by the load current in amps. Achieving forward regulation
will minimize power loss and heat dissipation, but it is
not a necessity. If a forward voltage drop of more than
20mV is acceptable then a smaller MOSFET can be used,
but must be sized compatible with the higher power dis-
sipation. Care should be taken to ensure that the power
dissipated is never allowed to rise above the manufactur-
er’s recommended maximum level. The auxiliary MOSFET
power switch, if used, has similar considerations, but its
VGS can be tailored by resistor selection. When choosing
the resistor value consider the full range of STAT pin cur-
rent (IS(SNK) ) that may flow through it.
VIN and SENSE Pin Bypass Capacitors
Many types of capacitors, ranging from 0.1µF to 10µF and
located close to the LTC4412HV, will provide adequate
VIN bypassing if needed. Voltage droop can occur at the
load during a supply switchover because some time is
required to turn on the MOSFET power switch. Factors
that determine the magnitude of the voltage droop include
the supply rise and fall times, the MOSFET’s characteris-
tics, the value of COUT and the load current. Droop can be
made insignificant by the proper choice of C
OUT
,
since the
droop is inversely proportional to the capacitance. Bypass
capacitance for the load also depends on the application’s
dynamic load requirements and typically ranges from 1µF
to 47µF. In all cases, the maximum droop is limited to
the drain source diode forward drop inside the MOSFET.
Caution must be exercised when using multilayer ceramic
capacitors. Because of the self resonance and high Q
characteristics of some types of ceramic capacitors, high
voltage transients can be generated under some start-up
conditions such as connecting a supply input to a hot
power source. To reduce the Q and prevent these tran-
sients from exceeding the LTC4412HV’s absolute maxi-
mum voltage rating, the capacitor’s ESR can be increased
by adding up to several ohms of resistance in series with
the ceramic capacitor. Refer to Application Note 88.
The selected capacitance value and capacitor’s ESR can
be verified by observing VIN and SENSE for acceptable
voltage transitions during dynamic conditions over the
full load current range. This should be checked with each
power source as well. Ringing may indicate an incorrect
bypass capacitor value and/or too low an ESR.
APPLICATIONS INFORMATION