UMT2222A / SST2222A / MMST2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A zDimensions (Unit : mm) zFeatures 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A. UMT2222A (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 zPackage, marking, and packaging specifications Part No. UMT2222A Packaging type UMT3 R1P SST3 R1P SMT3 R1P T106 T116 T146 3000 3000 3000 Marking Code Basic ordering unit (pieces) SST2222A SST2222A MMST2222A (1) Emitter (2) Base (3) Collector ROHM : SST3 MMST2222A zAbsolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCEO 75 40 6 0.6 V V V A VEBO IC UMT2222A,SST2222A, MMST2222A Collector power SST2222A dissipation Junction temperature Storage temperature 0.2 W Tj 0.35 150 W C Tstg -55 to +150 C PC (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 When mounted on a 7 x 5 x 0.6 mm ceramic board zElectrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 75 40 - - - - V V IC =10A IC =10mA Conditions Emitter-base breakdown voltage BVEBO 6 - ICBO - - - 100 V nA IE =10A Collector cutoff current Emitter cutoff current IEBO - - 100 nA VEB = 3V Collector-emitter saturation voltage VCE(sat) - - 0.3 - - 1 Base-emitter saturation voltage VBE(sat) 0.6 - 1.2 - - 2 35 - - VCE =10V , IC =0.1mA 50 75 - - - - VCE =10V , IC =1mA VCE =10V , IC =10mA VCE =1V , IC =150mA DC current transfer ratio Transition frequency Output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time hFE V V - 50 - - 100 - 300 Cob 40 300 - - - - - - 8 MHz pF Cib - - 25 pF td - - 10 ns tr - - 25 ns fT tstg - - 225 ns tf - - 60 ns VCB = 60V IC/IB =150mA/15mA IC/IB =500mA/50mA IC/IB =150mA/15mA IC/IB =500mA/50mA VCE =10V , IC =150mA VCE =10V , IC =500mA VCE =20V , IC =-20mA, f =100MHz VCB =10V , f =100kHz VEB =0.5V , f =100kHz VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , IC =150mA , IB1 =-IB2 =15mA VCC =30V , IC =150mA , IB1 =-IB2 =15mA Rev.A 1/3 UMT2222A / SST2222A / MMST2222A Transistors zElectrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25C 1000 600 400 50 Ta=25C DC CURRENT GAIN : hFE 500 VCE=10V 100 300 200 1V 100 IB=0A 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Fig.1 Grounded emitter output characteristics 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.3 DC current gain vs. collector current() 1000 Ta=25C IC / IB=10 VCE=10V DC CURRENT GAIN : hFE 0.3 25C 100 0.1 0 1.0 -55C 10 0.1 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.2 Collector-emitter saturation voltage vs. collector current 1.0 AC CURRENT GAIN : hFE Ta=25C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.4 DC current gain vs. collector current() 1000 10 0.1 10 COLLECTOR CURRENT : Ic(mA) 100 Fig.5 AC current gain vs. collector current 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 0.2 Ta=125C Ta=25C IC / IB=10 1.8 1.6 1.2 0.8 0.4 0 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.6 Base-emitter saturation voltage vs. collector current Rev.A 2/3 UMT2222A / SST2222A / MMST2222A 1.6 1000 Ta=25C IC / IB=10 1.2 0.4 VCC=30V 10V 10 1 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.7 Grounded emitter propagation characteristics 1000 Fig.8 Turn-on time vs. collector current 1000 Ta=25C VCC=30V IC=10IB1=10IB2 FALL TIME : tf(ns) STORAGE TIME : Ts(ns) Ta=25C VCC=30V IC=10IB1=10IB2 100 100 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 100MHz 250MHz 300MHz 200MHz 10 1000 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25C 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.11 Fall time vs. collector current Fig.10 Storage time vs. collector current 100 5 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.9 Rise time vs. collector current 100 CAPACITANCE(pF) 0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25C VCC=30V IC / IB=10 100 100 0.8 500 RISE TIME : tr(ns) Ta=25C VCE=10V 1.8 TURN ON TIME : ton(ns) BASE EMITTER VOLTAGE : VBE(ON)(V) Transistors Ta=25C f=1MHz Cib Cob 10 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.12 Input / output capacitance vs. voltage Ta=25C VCE=10V 100 1 250MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.13 Gain bandwidth product 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.14 Gain bandwidth product vs. collector current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0