UMT2222A / SST2222A / MMST2222A
Transistors
Rev.A
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A
zFeatures
1) BVCEO > 40V (IC=10 mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A.
zPackage, marking, and p ackaging specifications
Part No.
UMT2222A
UMT3
R1P
T106
3000
SST2222A
SST3
R1P
T116
3000
MMST2222A
SMT3
R1P
T146
3000
Packaging type
Marking
Code
Basic ordering unit
(pieces)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
75
40
6
0.6
0.35
150
−
55 to
+
150
Unit
V
V
V
A
W
W
P
C
0.2
SST2222A
UMT2222A,SST2222A,
MMST2222A
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board
zDimensions (Unit : mm)
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
UMT2222A
SST2222A
MMST2222A
zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
75
40
6
−
−
−
−
−
−
−
−
−
−
100
100
V
V
V
nA
nA
I
C
=
10µA
I
C
=
10mA
I
E
=
10µA
V
CB
=
60V
V
EB
=
3V
−−2
V
BE(sat)
0.6 −1.2 V
−−1I
C
/I
B
=
500mA/50mA
V
CE(sat)
−−0.3 VI
C
/I
B
=
150mA/15mA
I
C
/I
B
=
500mA/50mA
I
C
/I
B
=
150mA/15mA
40 −−
50 −−−
h
FE
75 −−
50 −−
35 −− V
CE
=
10V , I
C
=
0.1mA
V
CE
=
10V , I
C
=1
mA
V
CE
=
10V , I
C
=
10mA
V
CE
=
1V , I
C
=
150mA
100 −300 V
CE
=
10V , I
C
=
150mA
V
CE
=
10V , I
C
=
500mA
f
T
Cob 300
−
−
−
−
8MHz
pF V
CE
=
20V , I
C
=−
20mA, f
=
100MHz
V
CB
=
10V , f
=
100kHz
Cib −−25 pF V
EB
=
0.5V , f
=
100kHz
td −−10 ns V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
tr −−25 ns
tstg −−225 ns V
CC
=
30V , I
C
=
150mA , I
B1
=−
I
B2
=
15mA
V
CC
=
30V , I
C
=
150mA , I
B1
=−
I
B2
=
15mA
tf −−60 ns
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
1/3
UMT2222A / SST2222A / MMST2222A
Transistors
Rev.A
zElectrical characteristic curves
0
50
100
100 5
I
B
=0µA
100
200
400
500
600
300
Ta=25°C
COLLECTOR CURRENT : Ic(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
0.1 101.0 100 1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
1V
Fig.3 DC current gain vs. collector current(Ι)
1.0 10 100 1000
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
I
C
/ I
B
=10
Fig.2 Collector-emitter saturation
voltage vs. collector current
0.1 101.0 100 1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=125°C
V
CE
=
10V
25
°C
−55
°C
Fig.4 DC current gain vs. collector current(ΙΙ)
0.1 101.0 100 1000
100
1000
10
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
f
=
1kHz
Fig.5 AC current gain vs. collector current
1.0 10 100 1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
I
C
/ I
B
=10
Fig.6 Base-emitter saturation
voltage vs. collector current
2/3
UMT2222A / SST2222A / MMST2222A
Transistors
Rev.A
1 10 100 1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
Fig.7 Grounded emitter propagation
characteristics
1.0 10 100 1000
100
1000
10
TURN ON TIME : ton(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
IC / IB
=
10
VCC
=
30V
10V
Fig.8 Turn-on time vs. collector
current
1.0 10 100 1000
100
500
5
10
RISE TIME : tr(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
VCC
=
30V
IC / IB
=
10
Fig.9 Rise time vs. collector
current
1.0 10 100 1000
100
1000
10
STORAGE TIME : Ts(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.10 Storage time vs. collector
current
1.0 10 100 1000
100
1000
10
FALL TIME : tf(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
VCC
=
30V
IC
=
10IB1
=
10IB2
Fig.11 Fall time vs. collector
current
0.1 1.0 10 100
10
100
1
CAPACITANCE(pF)
REVERSE BIAS VOLTAGE(V)
Ta
=25°C
f
=
1MHz
Cib
Cob
Fig.12 Input / output capacitance
vs. voltage
110 100 1000
10
1
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
100MHz
200MHz
250MHz 300MHz
250MHz
Fig.13 Gain bandwidth product
1.0 10 100 1000
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT
(MHz)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
Fig.14 Gain bandwidth product
vs. collector current
3/3
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Should you intend to use these products with equipment or devices which require an extremely high level
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It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
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for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
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cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix