Ordering number : ENN7686 FW257 N-Channel Silicon MOSFET FW257 General-Purpose Switching Device Applications Preliminary Features * * Package Dimensions Motor drive. 4V drive. unit : mm 2129 [FW257] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 Specifications 0.595 1.27 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 Gate-to-Source Voltage VGSS 20 V V 2 A Drain Current (DC) ID Drain Current (PW10s) ID duty cycle1% 2.5 A Drain Current (PW100ms) ID duty cycle1% 5 A IDP duty cycle1% 8 A 1.4 W Drain Current (PW10s) Allowable Power Dissipation PD Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Mounted on a ceramic board (1200mm20.8mm) 1unit (PW10s) Mounted on a ceramic board (1200mm 20.8mm) (PW10s) 2.0 W 150 C -55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS Conditions Ratings min ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=16V, VDS=0 100 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=1A 1.2 typ 1.8 Marking : W257 Unit max V 1 A 10 A 2.6 3 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM No.7686-1/4 52004PA TS IM TA-100844 FW257 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=1A, VGS=10V ID=1A, VGS=4V Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 530 Output Capacitance 45 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 35 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 4 ns See specified Test Circuit. 58 ns Turn-OFF Delay Time Fall Time Conditions tf Qg Total Gate Charge min typ Unit max 175 220 m 220 310 m See specified Test Circuit. 25 ns VDS=50V, VGS=10V, ID=3A 13 nC 2.1 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=50V, VGS=10V, ID=3A VDS=50V, VGS=10V, ID=3A Diode Forward Voltage VSD IS=2A, VGS=0 2.8 nC 0.82 1.2 V Switching Time Test Circuit VDD=50V VIN 10V 0V ID=1A RL=50 VIN D VOUT PW=10s D.C.1% G FW257 P.G 50 ID -- VDS 4.5 0.8 0.6 0.4 3 2 1 --25C 1.0 4 Ta=2 5C 75C 3.5V 5 Drain Current, ID -- A 1.2 V 4.0 6.0V 8.0V 1.4 VDS=10V VGS=3.0V 10V Drain Current, ID -- A 1.6 ID -- VGS 6 V 2.0 1.8 S 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 2.0 IT05950 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT05952 No.7686-2/4 FW257 RDS(on) -- VGS Ta=25C ID=1A 350 300 250 200 150 100 50 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 150 100 --40 --20 0 20 40 60 80 100 120 140 160 IT05956 IF -- VSD VGS=0 3 C C 5 5 -2 =2 - Ta 1.0 C 75 7 5 3 1.0 7 5 3 2 --25C 2 2 C 25C 3 Ta=7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 200 10 7 5 0.1 7 5 3 2 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 5 7 10 IT05958 Drain Current, ID -- A 0.4 0.6 0.8 1.0 1.2 IT05960 Ciss, Coss, Crss -- VDS 1000 VDD=50V VGS=10V 2 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 f=1MHz 7 Ciss 5 100 td(off) 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns V =4 S G 0V V =1 A, S =1 VG ID A, =1 ID 250 Ambient Temperature, Ta -- C 5 0.1 0.01 tf 3 2 td(on) 10 7 5 tr 3 2 100 7 Coss 5 Crss 3 3 2 2 1.0 --0.1 10 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 0 7 --10 IT05962 5 Drain Current, ID -- A s IT05966 s 14 on Total Gate Charge, Qg -- nC 12 ati 10 0m 8 Operation in this area is limited by RDS(on). er 6 op 4 s 3 2 2 10 1 DC 3 2 2 0 10 1.0 7 5 0.1 7 5 0 <100s s IDP=2A 3 30 IT05964 1m 3 2 4 25 m 7 5 20 10 IDP=8A 8 10 7 5 6 15 ASO 2 VDS=50V ID=2A 9 10 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 300 50 --60 20 VDS=10V 7 350 IT05954 yfs -- ID 10 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 400 Ta=25C Single pulse Mounted on a ceramic board (1200mm20.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 IT06556 Drain-to-Source Voltage, VDS -- V No.7686-3/4 PD -- Ta Allowable Power Dissipation, PD -- W 2.5 Mounted on a ceramic board (1200mm20.8mm) PW10s 2.0 1.5 1.4 To ta lD iss 1u 1.0 nit ipa tio n 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT05970 Allowable Power Dissipation (FET1), PD -- W FW257 PD(FET1) -- PD(FET2) 1.6 Mounted on a ceramic board (1200mm20.8mm) PW10s 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Allowable Power Dissipation (FET2), PD -- W 1.6 IT06557 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2004. Specifications and information herein are subject to change without notice. PS No.7686-4/4