FW257
No.7686-1/4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID2A
Drain Current (PW≤10s) IDduty cycle≤1% 2.5 A
Drain Current (PW≤100ms) IDduty cycle≤1% 5 A
Drain Current (PW≤10µs) IDP duty cycle≤1% 8 A
Allowable Power Dissipation PDMounted on a ceramic board (1200mm2✕0.8mm) 1.4 W
1unit (PW≤10s)
Total Dissipation PT
Mounted on a ceramic board (1200mm
2
✕0.8mm) (PW≤10s)
2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 100 V
Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=1A 1.8 3 S
Marking : W257 Continued on next page.
Features
•Motor drive.
•4V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7686
FW257
Package Dimensions
unit : mm
2129
[FW257]
GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
14
58
4.4
0.3
6.0
0.2
5.0
0.595 1.27
1.5
0.1 1.8max
0.43
52004PA TS IM TA-100844
Preliminary
FW257
No.7686-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Static Drain-to-Source On-State Resistance RDS(on)1 ID=1A, VGS=10V 175 220 mΩ
RDS(on)2 ID=1A, VGS=4V 220 310 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 530 pF
Output Capacitance Coss VDS=20V, f=1MHz 45 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 35 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise T ime trSee specified Test Circuit. 4 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 58 ns
Fall T ime tfSee specified Test Circuit. 25 ns
Total Gate Charge Qg VDS=50V, VGS=10V, ID=3A 13 nC
Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=3A 2.1 nC
Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=3A 2.8 nC
Diode Forward Voltage VSD IS=2A, VGS=0 0.82 1.2 V
Switching Time Test Circuit
0
0
0.8
1.0
1.2
1.4
1.6
2.0
1.8
0.4 0.60.2
0.4
0.6
0.2
2.01.6 1.81.2 1.4
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
IT05950
0.8 1.0
VGS=3.0V
3.5V
8.0V
6.0V
4.0V
4.5V
10V
0
6
5
4
3
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
IT05952
VDS=10V
75°C
Ta=25°C
--25
°
C
10V
0V
VIN
FW257
ID=1A
RL=50Ω
VDD=50V
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
VOUT
VIN
FW257
No.7686-3/4
Drain Current, ID -- A
IT05958
0.01
1.0
0.1
23 57 1.0
2357 23 57
10
7
5
3
2
0.1
5
7
3
2
10
Forward T ransfer Admittance, yfs -- S
yfs-- ID
VDS=10V
Ta=25°C
--25°C
75
°
C
IT05960
0.60.2 0.4 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V
IF -- VSD
0
0.01
10
1.0
0.1
7
5
3
2
7
5
3
2
7
5
3
2
Forward Current, IF -- A
Ta=
75°
C
--25°C
25°C
VGS=0
10
100
1.0
--0.1 --1.0
23 57 --10
23 5
7
3
5
2
7
3
5
2
3
2
7
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT05962
tf
tr
td(on)
VDD=50V
VGS=10V
td(off)
0
100
1000
10
3
5
7
2
5
7
2
3
3010 15 20 255
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
IT05964
f=1MHz
Ciss
Coss
Crss
02468
400
50
100
150
200
250
300
350
141210 16 18 20
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
IT05954
Ta=25°C
ID=1A
100
150
200
250
300
350
400
50
RDS(on) -- Ta
IT05956
--60 --40 --20 0 20 40 60 80 100 120 140 160
ID=1A, VGS=4V
ID=
1A
, VGS=
10
V
Ambient Temperature, Ta -- °C
0
0
8
7
9
1412104286
10
2
1
4
3
6
5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT05966
VDS=50V
ID=2A
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
2
3
5
7
2
3
5
7
2
3
5
7
2
10
1.0
0.1
0.01 23 57
0.01 0.1 23 57
1.0 23 57
10 23 57
100 2
IT06556
DC operation
1ms
10ms
100ms
10s
<100µs
IDP=8A
IDP=2A
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm
2
✕0.8mm)
FW257
No.7686-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2004. Specifications and information herein are subject
to change without notice.
PS
IT05970
0
020 40 60 80 100 120
1.5
1.4
1.0
0.5
2.5
2.0
140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT06557
0
0
1.4
1.2
1.0
0.6
0.4
0.2
0.8
1.6
1.61.41.21.00.80.60.40.2
Allowable Power Dissipation (FET2), PD -- W
Allowable Power Dissipation (FET1), PD -- W
PD(FET1) -- PD(FET2)
Mounted on a ceramic board (1200mm
2
✕0.8mm)
PW≤10s
Mounted on a ceramic board (1200mm
2
✕0.8mm)
PW≤10s
1 unit
Total Dissipation