
AVALANCHE BRIDGE
PRV : 50 - 1000 Volts
Io : 35 Amperes
* High case dielectric strength
* High surge current capability
* Low forward voltage drop
* ldeal for printed circuit board
* Pb / RoHS Free
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Minimum Avalanche Breakdown Voltage at 100 µAVBO(min.) 100 150 250 450 700 900 1100 V
Maximum Avalanche Breakdown Voltage at 100 µAVBO(max.) 550 600 700 900 1150 1350 1550 V
Maximum Average Forward Current Tc = 50°CIF(AV) 35 A
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. ) I2t660 A2S
Maximum Forward Voltage per Diode at IF = 17.5 A VF1.1 V
Maximum DC Reverse Current Ta = 25 °CIR10 µA
at Rated DC Blocking Voltage Ta = 100 °CIR(H) 200 µA
Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C
1 ) Thermal resistance from junction to case with units mounted on a
7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )A
Page 1 of 2 Rev. 02 : March 24, 2005
RATING
IFSM 400 A
BR50W
Dimensions in inches and ( millimeters )
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)