G E SOLID STATE 01 DEP) 3875081 COlGOb 3 nyo e CA3083 General-Purpose High-Current N-P-N Transistor Array Features: a High Ic: 100 mA max. m Low Vcese (at 50 mA): 0.7V max. m Matched pair (Q1 and Q2) - Vio (Vee matched): + 5 mV max. lio (at 1 MA): 2.5 uA max. a 5 independent transistors plus separate substrate connection RCA-CA3083 is a versatile array of five high-current (to 100mA) n-p-n transistors on a common monolithic sub- strate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e. 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistor plus a sepa- rate terminal for the substrate permit maximum flexibility in circuit design. The CA3083 is supplied in a 16-lead dual-in- line frit-seal ceramic package. The CA3083 Is also available in chip form. SUSSTRATE Applications: a Signal processing and switching systems operating from DC to VHF m Lamp and relay driver a Differential amplitier a Temperature-compensated amplitier a Thyristor firing uw See RCA Application Note, ICAN- 5296 Application of the RCA- CA3018 Circuit Transistor Array for suggested applications 7 Ff 9929s | ) 3 casoes Le 666606 iy & 9 92CS- i7762 Fig. 1 Functional diagram of the CA3083. File Number 481 658 G E SOLID STATE O01 veg 3475041 OO4bO? 5 [I 7-93-2s A rays CA3083 MAXIMUM RATINGS, Absolute-Maximum Values at T, = 25C Power Dissipation: Any one transistor 2.0... cece eee ree ee eee eee 500 mw Total package... 0c eee ee ete ene 750 mW Above 55C coc ccc cece cree teen teen ene Derate linearly 6.67 mWAC Ambient Temperature Range: Operating 2.0... ce ee tenes 55 to +125 C Storage voce cece cence eee nn tne ren Ens 65 to +150 % Lead Temperature (During Soldering): At distance 1/16" 41/32 (1.59 mm 40.79 mm) from case for 10 seconds Max. 0... 6. ees 265 C The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage \VogQ!) Leben beet tne eee eben eee eneee 18 Vv Collector-to-Base Voltage (Vcgo) Lene bene een tenes ete etn 20 Vv Collector-to-Substrate Voltage (Veig) Detect eee teen e eee tanee 20 Vv Emitter-to-Base Voltage (Vepo) cc tee te dee eee e eee eet enae 5 Vv Collector Current (le) Pee ne ee tne eee eee ene 100 mA Base Current (Ip) Seed eee e net e een ee ee ene teen eee nnn 20 mA . The collector of each transistor of the CA3083 1s isolated from the substrate by an integral diode. The substrate must be connected to a voltage which 1s more negative than any collector voltage in order to maintain tsolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (5) should be maintained at either DC or signal {AC) ground. A suitable bypass capacitor can be used to establish a signal ground. ELECTRICAL CHARACTERISTICS at Ta = 25C For Equipment Design TEST CONDITIONS LIMITS Typ. CHARACTERISTICS {| SYMBOL Char. . UNITS Curve Min. Typ. Max. fs Ne aa For Each Transistor: Collector to-Base v In = 100uA, Ip = 0 = 20 60 - v Breakdown Voltage (BR)CBO c " E Coltector-to-Emitter Vv ln = 1mA, I, = 0 - 16 24 - Vv Breakdown Voltage (BR)CEO c B Collector-to-Substrate Ip, = 100HA,I_ = 0, Vv cl B Breakdown Voltage (BRICIO Ie=0 20 60 7 v Emitter-to-Base Vv I- = 500HA, 1. = 0 - 5 6.9 - v Breakdown Voltage (BRJEBO) E WAC Collector-Cutoff-Current | Ingo Voge = 10V, Ip = 0 - - - 10 vA Collector-Cutoff-Current | logo Veg = 10V. 1. = 0 - - - 1 LA OC Forward-Current h Vac=3V I= 10mA 2 40 76 - Transfer Ratio FE cE ig= SOMA 40 75 - Base-to-Emitter Voltage | Vag Vog= 3V. Ig = 10mMA 3 065 0.74 0.85 v Collector-to-Emitter Vv {n= 50mA,Ip=5mA 4 - 0.40 0.70 Vv Saturation Voltage CEsat C g=om Gain- Bandwidth Vcez3Vv f ~ 450 | MHz Product T Ig=10mA For Transistors Q1 and Q2 (As a Differential Amplifier): Apeowute Input Offset Mol . 7 _ 12 5 mV oltage Veg = 3V, Ig = ImA Absolute Input Offset | - Current | 10 8 07 25 HA 659 G E SOLID STATE Ol ve 3875081 OOL4LO8 7 3875081 G E SOLID STATE O1e 14608 4D T-Y3S-25 ewrege CA3083 TYPICAL STATIC CHARACTERISTICS FOR EACH TRANSISTOR - COLLECTOR -TO- ER VOLTS (Veg) #3V 9.8] COLLECTOR-TO-EMITTER VOLTS (Vg l#3V lv Ww = | Q E 90 s Le 3 @ 08 0G bate J so a z we 7 2 une g oekhn Ll ~ a 2 ee oc] E ees PA L~| 5 B o7 pw Z| Fr ST E 5 Le 19-4 = z a | 3 Ww La "1 C I | & 2 Le < 4 6 | z w OG = 8 60 q " yg La a 05 01 2 4 66 2 4 68 2 4 6 8100 Ol 1 10 4 0 COLLECTOR MILLIAMPERES (Ie) 2305 793 COLLECTOR MILLIAMPERES (Ic) | Fig.2hge vs lo Fig.3 Vee vs lo 1] SET DC FORWARD~CURRENT TRANSFER RATIO (hp_e) #10 SET OC thee) AMBIENT TEMPERATURE (Ta)= 25 C AMBIENT TEMPERATURE (T,}= 70C Zz o ! os 5 z 5 : a & oe = - 306 < Wy a 2 ge +4 a8 04 rae ~~ VA = S ws 6 5 oe @ ww Nt & y 02 aN s eae g el | anne 2 0 9 1 2 4 6 8g 2 4 6 Bigg 2 4 6 8 2 4 8 8 COLLECTOR MILLIAMPERES (Ic) COLLECTOR MILLIAMPERES (I} g2cS-17765 92CS-i7766 Fig-4~ Veogsat S (oat 25C Fig. Vogsat 8 Ic at 70C "| set oc TRANSFER RATIO (hep) +10 AMBIENT TURE (Ta) = 25C o 2 io 2 4 3 3 uw a > 2 a o > z 3 & a 2 <q uw a a e E = Ww e w wn a a 2 4 6 a 2 4 6 8B l io 100 COLLECTOR MILLIAMPERES (I-} 92CS-17767 Fig.6 Veceap V8 Io 660 G SOLID STATE O1 re | 3875081 0014609 4 T4s"2S Arrays CA3083 TYPICAL STATIC CHARACTERISTICS FOR DIFFERENTIAL AMPLIFIER -TO- 1 3V > TO- Vor) 3 AMBIENT TEMPERATURE (T,}* 25 AMBIENT TEMPERATURE ye 25ee a ABSOLUTE INPUT-OFFSET CURRENT (Ii) HA > 2 2 w 8 a B 3 b w n wu hw o 7 2 = uw 5 2 3 a a a Ot 2 4 6 6 i 2 4 10 oul 2 4 6 6 | 2 4 6 86 10 ' COLLECTOR MILLIAMPERES (Ic) e2cs-17768 COLLECTOR MILLIAMPERES (Ic) 9208-17769 | Fig.7 V jg VS I (transistors Q1 and Q2 as a differential Fig.8 | 19 v5 Iq {transistors Q1 and Q2 as a differential amplifier). amplifier]. : 661