UNISONIC TECHNOLOGIES CO., LTD
2SA1020 PNP SILICON TRANSISTOR
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Copyright © 2011 Unisonic Technologies Co., Ltd QW-R211-007,D
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power
switching applications.
FEATURES
*Low collector saturation voltage:
VCE(SAT)=-0.5V(MAX) (IC=-1A)
*High speed switching time: tSTG=1.0μs(TYP)
*Complement to UTC 2SC2655
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
2SA1020-x-AE3-R 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R SOT-23 E B C Tape Reel
2SA1020-x-AB3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R SOT-89 B C E Tape Reel
2SA1020-x-T9N-B 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B TO-92NL E C B Tape Box
2SA1020-x-T9N-K 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K TO-92NL E C B Bulk
2SA1020 PNP SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (T a=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current Ic -2 A
TO-92NL 900 mW
SOT-23 300 mW
Collector Power Dissipation SOT-89 PC 500 mW
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage BVCEO Ic=-10mA, IB=0 -50 V
Collector Cut-off Current ICBO V
CB=-50V, IE=0 -1.0 μA
Emitter Cut-off Current IEBO V
EB=-5V, IC=0 -1.0 μA
DC Current Gain hFE1
hFE2 VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A 70
40 240
Collector to Emitter Saturation Voltage VCE(SAT) Ic=-1A, IB=-0.05A -0.5 V
Base to Emitter Saturation Voltage VBE(SAT) Ic=-1A, IB=-0.05A -1.2 V
Transition Freq uency fT V
CE=-2V, Ic=-0.5A 100 MHz
Collector Output Capacitance COB V
CB=-10V, IE=0, f=1MHz 40 pF
Turn-on Time tON 0.1 μs
Storage Time tSTG 1.0 μs
Switching Time Fall Time tF
0.1 μs
CLASSIFICATION OF hFE1
RANK O Y
RANGE 70 - 140 120 - 240
2SA1020 PNP SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
2SA1020 PNP SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
TO-92NL
SOT-89
SOT-23
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
