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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. tm FGL40N120AND 1200V NPT IGBT Features Description * High speed switching Employing NPT technology, Fairchild's AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). * Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A * High input impedance * CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-264 G C E E Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current @TC = 25C Collector Current @TC = 100C ICM(1) Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD @TC = 100C FGL40N120AND Units 1200 V 25 V 64 A 40 A 160 A 40 A 240 A Maximum Power Dissipation @TC = 25C 500 W Maximum Power Dissipation @TC = 100C 200 W 10 s SCWT Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125C TJ Operating Junction Temperature -55 to +150 C TSTG Storage Temperature Range -55 to +150 C TL Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 seconds 300 C Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 C/W RJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.7 C/W RJA Thermal Resistance, Junction-to-Ambient -- 25 C/W (c)2008 Fairchild Semiconductor Corporation FGL40N120AND Rev. A2 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT February 2008 Device Marking Device Package Reel Size Tape Width Quantity FGL40N120AND FGL40N120AND TO-264 - - 25 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V BVCES/ TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- 250 nA IC = 250A, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 5.5 7.5 V IC = 40A, VGE = 15V -- 2.6 3.2 V IC = 40A, VGE = 15V, TC = 125C -- 2.9 -- V IC = 64A, VGE = 15V -- 3.15 -- V -- 3200 -- pF -- 370 -- pF -- 125 -- pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time -- 15 -- ns tr Rise Time -- 20 -- ns td(off) Turn-Off Delay Time -- 110 -- ns tf Fall Time -- 40 80 ns Eon Turn-On Switching Loss -- 2.3 3.45 mJ Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ Ets Total Switching Loss -- 3.4 5.1 mJ td(on) Turn-On Delay Time -- 20 -- ns tr Rise Time -- 25 -- ns td(off) Turn-Off Delay Time -- 120 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 1.8 -- mJ Ets Total Switching Loss -- 4.3 -- mJ Qg Total Gate charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 25C VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 125C VCE = 600V, IC = 40A, VGE = 15V 2 FGL40N120AND Rev. A2 -- 45 -- ns -- 2.5 -- mJ -- 220 330 nC -- 25 38 nC -- 130 195 nC www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25C unless otherwise noted Test Conditions IF = 40A IF = 40A, di/dt = 200A/s 3 FGL40N120AND Rev. A2 Min. Typ. Max. TC = 25C -- 3.2 4.0 TC = 125C -- 2.7 -- TC = 25C -- 75 112 TC = 125C -- 130 -- TC = 25C -- 8 12 TC = 125C -- 13 -- TC = 25C -- 300 450 TC = 125C -- 845 -- Units V nS A nC www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 150 TC = 25C Common Emitter VGE = 15V 20V 17V 15V 250 TC = 25C 120 200 Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Saturation Voltage Characteristics 12V 150 VGE = 10V 100 50 0 TC = 125C 90 60 30 0 0 2 4 6 8 10 0 Collector-Emitter Voltage, VCE [V] 80 Common Emitter VGE = 15V VCC = 600V Load Current : peak of square wave 70 60 4 80A Load Current [A] Collector-Emitter Voltage, VCE [V] 6 Figure 4. Load Current vs. Frequency 3 40A 2 50 40 30 20 IC = 20A Duty cycle : 50% TC = 100C 10 Power Dissipation = 100W 0 1 25 50 75 100 0.1 125 1 Case Temperature, TC [C] 20 100 1000 Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25C 16 12 8 80A 4 10 Frequency [kHz] Figure 5. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 4 Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 2 40A IC = 20A 0 Common Emitter TC = 125C 16 12 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 0 Gate-Emitter Voltage, VGE [V] 8 12 16 20 Gate-Emitter Voltage, VGE [V] 4 FGL40N120AND Rev. A2 4 www.fairchildsemi.com (Continued) Figure 7. Capacitance Characteristics 6000 Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VGE = 0V, f = 1MHz TC = 25C 5000 100 Switching Time [ns] Capacitance [pF] Ciss 4000 3000 2000 Coss 1000 tr Common Emitter VCC = 600V, VGE = 15V td(on) IC = 40A Crss TC = 25C TC = 125C 10 0 1 0 10 10 20 Figure 9. Turn-Off Characteristics vs. Gate Resistance 50 60 70 Common Emitter VCC = 600V, VGE = 15V TC = 25C IC = 40A td(off) TC = 125C TC = 25C 10 TC = 125C Switching Loss [mJ] Switching Time [ns] 40 Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = 15V, IC = 40A 1000 30 Gate Resistance, RG [ ] Collector-Emitter Voltage, VCE [V] 100 tf Eon Eoff 1 10 0 10 20 30 40 50 60 70 0 10 20 Gate Resistance, RG [] Figure 11. Turn-On Characteristics vs. Collector Current 40 50 60 70 Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5 Common Emitter VGE = 15V, RG = 5 100 30 Gate Resistance, RG [] TC = 25C TC = 25C tr TC = 125C Switching Time [ns] Switching Time [ns] TC = 125C td(on) td(off) 100 tf 10 20 30 40 50 60 70 20 80 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] 5 FGL40N120AND Rev. A2 30 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 16 Common Emitter VGE = 15V, RG = 5 TC = 25C Switching Loss [mJ] Eoff 1 0.1 600V 12 10 400V 8 6 4 2 0 20 30 40 50 60 70 80 0 50 Collector Current, IC [A] 100s Collector Current, IC [A] DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.01 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 250 100 1ms 10 0.1 200 50s Ic MAX (Continuous) 0.1 150 Figure 16. Turn-Off SOA Ic MAX (Pulsed) 100 100 Gate Charge, Qg [nC] Figure 15. SOA Characteristics Collector Current, Ic [A] Vcc = 200V TC = 25C Eon TC = 125C Gate-Emitter Voltage, VGE [V] 10 Common Emitter RL = 15 14 10 100 1000 1 10 Collector - Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current 10 Reverse Recovery Currnet , Irr [A] 100 o Forward Current , IF [A] TJ = 125 C 10 o TJ = 25 C 1 o TC = 125 C di/dt = 200A/s 8 6 4 di/dt = 100A/s 2 o TC = 25 C 0.1 0 1 2 3 4 5 0 0 6 Forward Voltage , VF [V] 20 30 40 50 60 70 Forward Current , IF [A] 6 FGL40N120AND Rev. A2 10 www.fairchildsemi.com (Continued) Figure 19. Stored Charge Figure 20. Reverse Recovery Time 400 Stored Recovery Charge , Qrr [nC] 100 Reverse Recovery Time , trr [ns] FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics 90 di/dt = 200A/s 80 di/dt = 100A/s 70 60 di/dt = 200A/s 300 200 di/dt = 100A/s 100 50 0 10 20 30 40 50 60 70 0 0 Forward Current , IF [A] 10 20 30 40 50 60 70 Forward Current , IF [A] Figure 21. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.1 0.5 0.2 0.1 0.01 0.05 Pdm Pdm t1 t1 0.02 0.01 1E-3 1E-5 t2 t2 single pulse 1E-4 Duty Dutyfactor factorDD==t1 t1//t2 t2 Peak PeakTj Tj==Pdm PdmxxZthjc Zthjc++TTCC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] 7 FGL40N120AND Rev. A2 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Mechanical Dimensions (8.30) (1.00) (2.00) 20.00 0.20 1.50 0.20 (7.00) .20 ) (7.00) 2.50 0.10 4.90 0.20 (1.50) (1.50) 2.50 0.20 3.00 0.20 (1.50) 20.00 0.50 0) .00 (2.00) (11.00) 2.0 (R (R1 (0.50) 0 0 o3.3 (9.00) (9.00) (8.30) (4.00) 20.00 0.20 6.00 0.20 TO-264 +0.25 1.00 -0.10 +0.25 0.60 -0.10 2.80 0.30 (2.80) 5.45TYP [5.45 0.30] (0.15) (1.50) 3.50 0.20 5.00 0.20 5.45TYP [5.45 0.30] Dimensions in Millimeters 8 FGL40N120AND Rev. 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