HC8050 Shantou Huashan Electronic Devices Co.,Ltd. NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 T stg ----Storage Temperature.............................. -55~150 TO-92 Tj----Juncttion Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................40V 1EmitterE 2CollectorC 3BaseB VCEO----Collector-Emitter Voltage.................................25V V EB O ----Emitter-Base Voltage....................................6V I C ----Collector Current.............................................1.5A ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics ICBO IEBO HFE Collector Cut-off Current VBE VCE(sat VBE(sat) BVCBO BVCEO BVEBO fT Base- Emitter Voltage Min Emitter Cut-off Current 85 40 DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage 40 25 6 100 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Current Gain-Bandwidth Product Typ Max Unit Test Conditions 0.1 0.1 500 A A 1 0.5 1.2 V V V V V V MHz VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100AIE=0 IC=2mAIB=0 IE=100AIC=0 VCE=10V, IC=50mA hFE Classification B 85--160 C D E 120--200 160--300 270--500 Shantou Huashan Electronic Devices Co.,Ltd. HC8050