Shantou Huashan Electronic Devices Co.,Ltd.
█ NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
ICBO
IEBO
HFE
VBE
VCE(sat）
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base- Emitter Voltage
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Current Gain-Bandwidth Product
85
40
40
25
6
100
0.1
0.1
500
1
0.5
1.2
μA
μA
V
V
V
V
V
V
MHz
VCB=35V, IE=0
VEB=6V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=1V, IC=10mA
IC=800mA, IB=80mA
IC=800mA,IB=80mA
IC=100μA，IE=0
IC=2mA，IB=0
IE=100μA，IC=0
VCE=10V, IC=50mA
█ hFE Classification
B C D E
85—160 120—200 160—300 270—500
Tstg——Storage Temperature………………………… -55~150℃
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation…………………………………1W
VCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………25V
VEBO——Emitter-Base Voltage………………………………6V
IC——Collector Current………………………………………1.5A
1―Emitter，E
2―Collector，C
3―Base，B
TO-92
HC8050
Shantou Huashan Electronic Devices Co.,Ltd.
HC8050
