TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Plastic MELF package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional polarity only * 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (200 W above 91 V) * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-213AB (GL41) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. PRIMARY CHARACTERISTICS VBR 6.8 V to 200 V PPPM 400 W, 200 W PD 1.0 W IFSM 40 A TJ max. 150 C MECHANICAL DATA Case: DO-213AB (GL41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Blue band denotes the cathode which is positive with respect to the anode under normal TVS operation MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform (1) (Fig. 1) SYMBO VALUE UNIT PPPM 400 W PD 1.0 W Peak pulse current with a 10/1000 s waveform (1) (Fig. 3) IPPM See next table A Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2) IFSM 40 A VF 3.5 V TJ, TSTG - 55 to + 150 C Power dissipation on infinite heatsink at TL = 75 C Maximum instantaneous forward voltage at 25 A for uni-directional only Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 C per Fig. 2. Rating is 200 W above 91 V (2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum Document Number: 88403 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) (1) MIN. TEST CURRENT AT IT (mA) MAX. STANDOFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (A) MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/C) TGL41-6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.060 TGL41-6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.060 TGL41-7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.064 TGL41-7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.064 TGL41-8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.068 TGL41-8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.068 TGL41-9.1 8.19 10.0 1.0 7.37 50.0 29.0 13.8 0.071 TGL41-9.1A 8.65 9.55 1.0 7.78 50.0 29.9 13.4 0.071 TGL41 -10 9.00 11.0 1.0 8.10 10.0 26.7 15.0 0.076 TGL41 -10A 9.50 10.5 1.0 8.55 10.0 27.6 14.5 0.076 TGL41 -11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.078 TGL41 -11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.078 TGL41-12 10.8 13.2 1.0 9.72 5.0 23.1 17.3 0.081 TGL41-12A 11.4 12.6 1.0 10.2 5.0 24.0 16.7 0.081 TGL41-13 11.7 14.3 1.0 10.5 5.0 21.1 19.0 0.084 TGL41-13A 12.4 13.7 1.0 11.1 5.0 22.0 18.2 0.084 TGL41-15 13.5 16.5 1.0 12.1 5.0 18.2 22.0 0.087 TGL41-15A 14.3 15.8 1.0 12.8 5.0 18.9 21.2 0.087 0.089 TGL41-16 14.4 17.6 1.0 12.9 5.0 17.0 23.5 TGL41-16A 15.2 16.8 1.0 13.6 5.0 17.8 22.5 0.089 TGL41-18 16.2 19.8 1.0 14.5 5.0 15.1 26.5 0.091 TGL41-18A 17.1 18.9 1.0 15.3 5.0 15.9 25.2 0.091 TGL41-20 18.0 22.0 1.0 16.2 5.0 13.7 29.1 0.093 TGL41-20A 19.0 21.0 1.0 17.1 5.0 14.4 27.7 0.093 TGL41-22 19.8 24.2 1.0 17.8 5.0 12.5 31.9 0.095 TGL41-22A 20.9 23.1 1.0 18.8 5.0 13.1 30.6 0.095 TGL41-24 21.6 26.4 1.0 19.4 5.0 11.5 34.7 0.097 TGL41-24A 22.8 25.2 1.0 20.5 5.0 12.0 33.2 0.097 TGL41-27 24.3 29.7 1.0 21.8 5.0 10.2 39.1 0.099 TGL41-27A 25.7 28.4 1.0 23.1 5.0 10.7 37.5 0.099 TGL41-30 27.0 33.0 1.0 24.3 5.0 9.2 43.5 0.100 TGL41-30A 28.5 31.5 1.0 25.6 5.0 9.7 41.4 0.100 TGL41-33 29.7 36.3 1.0 26.8 5.0 8.4 47.7 0.101 TGL41-33A 31.4 34.7 1.0 28.2 5.0 8.8 45.7 0.101 0.102 TGL41-36 32.4 39.6 1.0 29.1 5.0 7.7 52.0 TGL41-36A 34.2 37.8 1.0 30.8 5.0 8.0 49.9 0.102 TGL41-39 35.1 42.9 1.0 31.6 5.0 7.1 56.4 0.103 TGL41-39A 37.1 41.0 1.0 33.3 5.0 7.4 53.9 0.103 TGL41-43 38.7 47.3 1.0 34.8 5.0 6.5 61.9 0.104 TGL41-43A 40.9 45.2 1.0 36.8 5.0 6.7 59.3 0.104 TGL41-47 42.3 51.7 1.0 38.1 5.0 5.9 67.8 0.104 TGL41-47A 44.7 49.4 1.0 40.2 5.0 6.2 64.8 0.104 TGL41-51 45.9 56.1 1.0 41.3 5.0 5.4 73.5 0.105 www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88403 Revision: 20-Oct-08 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) BREAKDOWN VOLTAGE DEVICE TYPE VBR (V) (1) TEST CURRENT AT IT (mA) STANDOFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (A) MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/C) MIN. MAX. TGL41-51A 48.5 53.6 1.0 43.6 5.0 5.7 70.1 0.105 TGL41-56 50.4 61.6 1.0 45.4 5.0 5.0 80.5 0.106 TGL41-56A 53.2 58.8 1.0 47.8 5.0 5.2 77.0 0.106 TGL41-62 55.8 68.2 1.0 50.2 5.0 4.5 89.0 0.107 TGL41-62A 58.9 65.1 1.0 53.0 5.0 4.7 85.0 0.107 TGL41-68 61.2 74.8 1.0 55.1 5.0 4.1 98.0 0.107 TGL41-68A 64.6 71.4 1.0 58.1 5.0 4.3 92.0 0.107 TGL41-75 67.5 82.5 1.0 60.7 5.0 3.7 108 0.108 TGL41-75A 71.3 78.8 1.0 64.1 5.0 3.9 103 0.108 TGL41-82 73.8 90.2 1.0 66.4 5.0 3.4 118 0.108 TGL41-82A 77.9 86.1 1.0 70.1 5.0 3.5 113 0.108 TGL41-91 81.9 100 1.0 73.7 5.0 3.1 131 0.109 TGL41-91A 86.5 95.5 1.0 77.8 5.0 3.2 125 0.109 TGL41-100 90.0 110 1.0 81.0 5.0 1.39 144 0.109 TGL41-100A 95.0 105 1.0 85.5 5.0 1.46 137 0.109 TGL41-110 99.0 121 1.0 89.2 5.0 1.27 158 0.110 TGL41-110A 105 116 1.0 94.0 5.0 1.32 152 0.110 TGL41-120 108 132 1.0 97.2 5.0 1.16 173 0.110 TGL41-120A 114 126 1.0 102 5.0 1.21 165 0.110 TGL41-130 117 143 1.0 105 5.0 1.07 187 0.110 TGL41-130A 124 137 1.0 111 5.0 1.12 179 0.110 TGL41-150 135 165 1.0 121 5.0 0.93 215 0.111 TGL41-150A 143 158 1.0 128 5.0 0.97 207 0.111 TGL41-160 144 176 1.0 130 5.0 0.87 230 0.111 TGL41-160A 152 168 1.0 136 5.0 0.91 219 0.111 TGL41-170 153 187 1.0 138 5.0 0.82 244 0.111 TGL41-170A 162 179 1.0 145 5.0 0.85 234 0.111 TGL41-180 162 198 1.0 146 5.0 0.78 258 0.111 TGL41-180A 171 189 1.0 154 5.0 0.81 246 0.111 TGL41-200 180 220 1.0 162 5.0 0.70 287 0.111 TGL41-200A 190 210 1.0 171 5.0 0.73 274 0.111 Notes: (1) Pulse test: tp 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TGL41-6.8A-E3/96 0.134 96 1500 7" diameter plastic tape and reel TGL41-6.8A-E3/97 0.134 97 5000 13" diameter plastic tape and reel Document Number: 88403 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified) Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 10 Measured at Zero Bias 1000 TGL41-6.8 TGL91A 1 TGL41-100 0.1 0.1 s TGL200A Measured at Stand-Off Voltage VWM 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Uni-Directional 10 1.0 s 10 s 100 s 1.0 ms 10 ms 1 10 100 1000 td - Pulse Width VBR - Breakdown Voltage (V) Figure 1. Peak Pulse Power Rating Curve Figure 4. Typical Junction Capacitance 1.00 100 PD - Power Dissipation (W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentace (%) 10 000 CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 0.75 75 0.50 50 25 0.25 0 0 0 25 50 100 75 125 150 175 0 200 25 50 75 100 125 150 175 TJ - Initial Temerature (C) TL - Lead Temerature (C) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 5. Power Derating Curve 50 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 200 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 40 30 20 10 0 0 www.vishay.com 4 1.0 2.0 3.0 4.0 1 100 10 t - Time (ms) Number of Cycles at 60 Hz Figure 3. Pulse Waveform Figure 6. Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Only For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88403 Revision: 20-Oct-08 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-213AB (GL41) Mounting Pad Layout Solderable Ends 1st Band D2 0.022 (0.56) 0.018 (0.46) 0 D2 = D1 + - 0.008 (0.20) 0.138 (3.5) MAX. D1 = 0.105 0.095 (2.67) (2.41) 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185 (4.7) 0.118 (3.0) MIN. 0.049 (1.25) MIN. 0.238 (6.0) REF. 1st Band Denotes Type and Positive End (Cathode) Document Number: 88403 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1