2N7002A
Document number: DS31360 Rev. 8 - 2 1 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002A
NEW PRODUCT
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = 25°C
60V 6 @ VGS = 5V 200mA
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Motor control
Power Management Functions
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Copper
leadframe).
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
2N7002A-7 SOT23 3,000/Tape & Reel
2N7002A-13 SOT23 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Equivalent Circuit Top View
Pin-Out
D
GS
ESD PROTECTED TO 1.2kV
Source
Gate
Protection
Diode
Gate
Drain
K = SAT (Shanghai Assembly/ Test site)
C = CAT (Chengdu Assembly/ Test site)
MN1= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Shanghai A/T Site Chengdu A/T Site
KMN1
YM
CMN1
YM
2N7002A
Document number: DS31360 Rev. 8 - 2 2 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002A
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 4) VGS = 10V Steady
State
TA = 25°C
TA = 85°C
TA = 100°C ID 180
130
115 mA
Continuous Drain Current (Note 5) VGS = 10V Steady
State
TA = 25°C
TA = 85°C
TA = 100°C ID 220
160
140 mA
Maximum Continuous Body Diode Forward Current (Note 5) IS 0.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 370 mW
(Note 5) 540
Thermal Resistance, Junction to Ambient (Note 4) RθJA 348 °C/W
(Note 5) 241
Thermal Resistance, Junction to Case (Note 5) R
θ
JC 91
Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.2 2.0 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ TJ = 25°C
@ TJ = 125°C RDS (ON) 3.5
3.0 6
5 Ω VGS = 5.0V, ID =0.115A
VGS = 10V, ID =0.115A
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss 23 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 3.4 pF
Reverse Transfer Capacitance Crss 1.4 pF
Gate Resistance RG 260 400 Ω V
DS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time tD
(
ON
)
10 ns VDD = 30V, ID = 0.115A, RL = 150Ω,
VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD
(
OFF
)
33 ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subje c t to produ ct testing.
2N7002A
Document number: DS31360 Rev. 8 - 2 3 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002A
NEW PRODUCT
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
12345
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
1
2
3
4
5
6
7
8
9
0 0.1 0.2 0.3 0.4 0.5 0.6
V = 5V
GS
V = 10V
GS
0
0.5
1.0
1.5
2.0
2.5
Fig . 5 Gat e Thresh old Varia tion vs. Am bient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
1.0
I = 250µA
D
Fig. 6 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
1
10
100
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
2N7002A
Document number: DS31360 Rev. 8 - 2 4 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002A
NEW PRODUCT
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
V , SOURCE-DRAIN VOL TAGE (V)
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0.0001
0.001
0.01
0.1
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
2N7002A
Document number: DS31360 Rev. 8 - 2 5 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002A
NEW PRODUCT
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