__7964142 SAMSUNG SEMTCANNHATAR TNC pile lag pe Bpraeyae go005129 4 IRF 420/421/422/423 _ 98D. 05129 a - NCCHANNEL POWER MOSFETS FEATURES Low Rpgjon) at high voltage Improved inductive ruggedness. Excellent high voltage stability Fast switching times Rugged polysilicon gate cell structure Low input capacitance Extended safe operating area ; Improved high temperature reliability TO-3 package (High voitage) PRODUCT SUMMARY Part Number Vps Rosjon) IRF420 _800V 3.02 2.50 IRF421 450V 3.08 _ 2.5A IRF422 500V 4.02 2.0A IRF423 450V 4.00 2.0A MAXIMUM RATINGS T0-3 Characteristic Symbol IRF420 IRF421 IRF422 IRF423 Unit Drain-Source Voltage (1) Voss 600 450 500 450 Vdc Drain-Gate Voltage (Ras=1.0MQ) (1) Vocr 500 450 500 450 Vde Gate-Saurce Voltage +20 Vde Continuous Drain Current To=25C 2.5 2.5 2.0 2.0 Ade Continuous Drain Current Teg=100C 1.5 1.5 1.0 1.0 Adc Drain CurrentPulsed (3) 10 10 8.0 8.0 Adc I - | Operating and Storage Gate Current~Pulsed lam +1.65 Adc Total Power Dissipation @ Tc=25C Pp Derate above 25C . 40 0.32 Watts wiec Junction Temperature Range Ty, Tstg 55 to 150 c Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5 seconds Th 300 C Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300yus, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ce SAMSUNG SEMICONDUCTOR 128 1 thas ama ve 7964142 SAMSUNG SEMICONDUCTOR INC. IRF420/421/422/423 POWER MOSFETS ELECTRICAL CHARACTERISTICS (To=25C unless otherwise specified) Characteristic Symbol] Type |Minj Typ | Max [Units Test Conditions , rane 5001 | j| V |Ves=0V Drain-Source Breakdown BVpss - Voltage - {IRF424 450 V |lp=250 IRF423 ~F > p=250uA Gate Threshold Voltage Vesin | ALL | 2.0] | 4.0 | V [Vos=Vas, lo=250pnA Gate-Source Leakage Forward less ALL | | {| 100] nA |Vgs=20V |Gate-Source Leakage Reverse} lass ALL | | }|-100] nA |Ves=20V Zero Gate Voltage loss | ALL || | 260 | #A |Vos=Max. Rating, Vas=0V Drain Current | | 1000] yA |Vps=Max. Ratingx0.8, Vas=OV, Tc=125C On-State Drain-Source IRraat 25)] 7 | A nstate Srain-Sourc Ipton} > Vos>lojon) XRpsion) max.. Vas=10V Current (2) IRF422 iRF423| 7; | |-A . . raat |2.5)] 3.0 Q Static Drain-Source On-State Roston) Ves=10V, tp=1.0A Resistance (2) IRF422 +. IRF423| ~ 3.0 | 4.0 a Forward Transconductance (2)| gis ALL |{1.0/1.75}| Bl Vps>lp(on)XRosion) max., Ip=1.0A Input Capacitance Ciss ALL {| |300; 600 | pF Output Capacitance Coss ALL | {| 75 | 150] pF iVas=OV, Vos=25V, f=1.0MHz Reverse Transfer Capacitance Crss ALL | |] 20] 40 pF Tum-On Delay Time td(on) ALL | | 4} 60 | ns Rise Time t; ac |i 50 ns Vop=0.58Vpss, to=1 OA, Zo=500, - : (MOSFET switching times are essentially Turn-Off Delay Time taoty | ALL | | | 60 | NS |independent of operating temperature.) Fall Time te ALL || / 30 ns Total Gate Charge . (Gate-Source Plus Gate-Drain) Qq ALL | j} #1] 15 | nO |vgs=10V, tp=3.0A, Vos=0.8 Max, Rating 7 (Gate charge Is essentially independent of Gate-Source Charge Qos ALL | |5.0; | nc operating temperature.) Gate-Drain (Miller) Charge Qoa ALL | |;6.0; nc THERMAL RESISTANCE Junction-to-Case Rthuc ALL | | | 3.12 | KAW Case-to-Sink Rincs | ALL | | 0.1} | K/W [Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL | | | 30 | K/W [Free Air Operation Notes: (1) Ty=25C to 160C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature G3 samsunc SEMICONDUCTOR 129 _.98D 05130. oT-B4-tl | poss ae Ee 7ab4u42 ooos130 5 | N-CHANNEL | :- 7964142 SAMSUNG SEMICONDUCTOR INC 88D_ 05134 1 pT=34-1t" pol Tag pe racuiue ooosua, 2) " NCHANNEL IRF420/421/422/423 - , POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND. CHARACTERISTICS Characteristic Symbol] Type | Min| Typ | Max [Units Test Conditions IRF420; | 251A Continuous Source Current Is IRF421 Body Diode {Body Diode} EEaos| | | 2.0 |- A [Modified MOSFET symbol - A : showing the integral 6 . . IRF420/ _ | _ | 49 | a. [reverse P-N junction rectifier. s Pulse Source Current isy (RE421 . : (Body Diode) (3) IRF422)_ |_| ao] a : IRF423 . eae |] 1.4] V [Te=28C, ts=2.5A, Vas=0V Diode Forward Voltage (2) _Vsp IRF422 : _ _ iRF423| | 1.3 | V ITo=26C, ls=2.0A, Ves=O0V Reverse Recovery Time |) te ALL | |600| ns |Ty=150C, lp=2.5A, die/dt=100A/ps Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300yus, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature Vos 10 a i g a oi = = = < a 5 rc uw c c > a So 7 2 5 2 z & z a 3 s s av \ - Vos, DRAIN-TO-SOURCE VOLTAGE {VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) . Typical Output Characteristics Typical Transfer Characteristics Vos=10 s a w = a g & = z z 5 & & = a zr 3B 6 z z z g a 3 4 o 4 20 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SQURCE VOLTAGE (VOLTS) Typica! Saturation Characteristics . Maximum Safe Operating Area ag SAMSUNG SEMICONDUCTOR 130 IRF420/421/422/423 ~ THERMAL. IMPEDANCE (PER UNIT) 2 _ ZhsclWRingc, NORMALIZED EFFECTIVE TRANSIENT . tt. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Elective Transient Thermal impedance Junction: to-Case Vs. Pulse Duration gfs, TRANSCONDUCTANCE (SIEMENS) 0 2 3 4 Ip, DRAIN CURRENT (AMPERES) Typical Transconductance Vs. Drain Current 1 BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature |_ 7964142 | SAMSUNG SFMTPONNI] OR ING. 98D 05132. . po T-34- 4 eT DE QP ?9b4142 goosia2e 9 B= CHANNEL jor, REVERSE DRAIN CURRENT (AMPERES) Rosin}, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) POWER MOSFETS 2 ee te ee wot 1. Duty Factor, Dat 2 Per Unit Gase=Ran=3 12 Deg 3 TacTe*Pae Zac (l} Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typicat SourceDrain Diode Forward Voltage o -40 0 40 80 420 160 Ty, JUNCTION TEMPERATURE (C) Normatized On-Resistance Vs. Temperature ef samsunc SEMICONDUCTOR 131 errr eee eIb4Y1i4e 0005133 g IRF420/421/422/423 C,, CAPACITANCE (pF) Roxon) DRAIN-TO-SOURCE ON RESISTANCE (OHMS) Pp, POWER DISSIPATION (WATTS) Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage . ly, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve GE samsunc SEMICONDUCTOR Ip, DRAIN CURRENT (AMPERES) SUNG SEMICONDUCTOR INC we et we 7 N- CHANNEL Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) ) 05138. OD T-Ball __ 981 POWER MOSFETS i 1 vo 2250 oO 4 16 20 Qg, TOTAL GATE CHARGE (nc) Typical Gate Charge Vs. Gate-To-Source Voltage 25 75 100 1650 Ts, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature 132