2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-761A (Z)
2nd. Edition
Feb. 1999
Features
• Low on-resistance
RDS = 60 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
G
D
S
2SK3211
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 200 V
Gate to source voltage VGSS ±20 V
Drain current ID25 A
Drain peak current ID(pulse)Note1 100 A
Body-drain diode reverse drain current IDR 25 A
Avalanche current IAP Note3 25 A
Avalanche energy EAR Note3 41 mJ
Channel dissipation Pch Note2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK3211
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 200 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Zero gate voltege drain
current IDSS ——10µAV
DS = 200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) —6075mΩI
D
= 15 A, VGS = 10 VNote4
resistance RDS(on) —6585mΩI
D
= 15 A, VGS = 4 V Note4
Forward transfer admittance |yfs|1830—SI
D
= 15 A, VDS = 10 V Note4
Input capacitance Ciss — 2420 — pF VDS = 10 V
Output capacitance Coss — 790 — pF VGS = 0
Reverse transfer capacitance Crss — 340 — pF f = 1 MHz
Turn-on delay time td(on) — 20 — ns ID = 15 A, VGS = 10 V
Rise time tr— 230 — ns RL = 2 Ω
Turn-off delay time td(off) — 590 — ns
Fall time tf— 330 — ns
Body–drain diode forward
voltage VDF — 0.95 — V IF = 25 A, VGS = 0
Body–drain diode reverse
recovery time trr — 230 — ns IF = 25 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3211
4
Main Characteristics
40
30
20
10
050 100 150 200
100
3
10
1
0.1
0.0112 10
20 100
20
16
12
8
4
012345
0246810
Ta = 25 °C
Tc = 75°C
25°C
–25°C
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = 10 V
Pulse Test
DS
100 µs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
50
40
30
20
10
3.5 V
3 V
V =2.5 V
GS
10 V Pulse Test
6 V 4 V
0.3
0.03
500
30
550 200
2SK3211
5
110 100
250
500
20
50
10
250
200
150
100
50
–40 0 40 80 120 160
00.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
205
2.5
2.0
1.5
1.0
0.5
048
12 16 20
I = 15 A
D
5 A
10 A
200
100 V = 4 V
GS
10 V
V = 4 V
GS
10 V
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on
)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (
m
)Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature T
c
(°C)
DS(on)
R (
m
)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
5,10,15 A
5,10,15 A
2SK3211
6
0.1 0.3 1 3 10 30 100 01020304050
2000
10000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
40 80 120 160 200
0
1000
500
50
100
20
10
200
200
1000
20
100
10
0.1 0.2 1 210 20
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
10
20
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 20 A
D
V
GS
V
DS
V = 150 V
100 V
50 V
DD
tf
r
t
d(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
V = 150 V
100 V
50 V
DD
50
500
0.5 5
5000
2SK3211
7
20
16
12
8
4
00.2 0.4 0.6 0.8 1.0
V = 0, –5 V
GS
10 V
5 V
50
40
30
20
10
25 50 75 100 125 150
0
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Avalanche WaveformAvalanche Test Circuit
I = 25 A
V = 50 V
duty < 0.1 %
Rg > 50
AP
DD
Ω
2SK3211
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
t
f
Switching Time Test Circuit Waveform
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m 1 10
s (t)
γ
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance vs. Pulse Width
2SK3211
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
—
—
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK3211
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
—
—
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK3211
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
—
—
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK3211
12
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
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5. This product is not designed to be radiation resistant.
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