Numerical Index 2N2331-2N2424 al> MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS i = = = = TYPE | ii | & REPLACE. | PAGE | yse | Po |-3| Ts | Ves | Vee }= fire @le Ly} Vegan @le Bf |B {S| MENT | NUMBER < 3 g 2) ou /8] 2/8 =\a. @ISC | By C | (volts) | (volts) |S | min) (max) 5} (volts) 5 3 3\3 2N2331 S| N 8-125] CHP O.5W} A] 150 30 20] 0 50 LOM LOOM | T 2N2332 S| P CHP | 0. L5W}{ A | 200 15 is |o 2N2333 S| P CHP | 0.15W | A | 200 15 5.0] 0 2N2334 St P CHP | 0.15W | A | 200 30 15 | 0 2N2335 S| P CHP } 0.15W} A] 200 30 15) 0 2N2336 S| P CHP | 0.15Wj A | 200 50 35] 0 2N2337 S| P CHP | 0.15W| A j 200 50 35] 0 2N2338 S| N [ 2N3713 7-125] LPA 150W | C | 200 60 40]017.0 6.0A 1.5 3.0A 12 | E ISK] E 2N2339 S| N] 2N4898 7-172) LPA 40W | C | 200 60 4010] 6.0 L.5A 1.5 0.3A 12/5 0.7M{T 2N2340 S| N HPA I5w| Cc] 175 50 40] 0 10 40 750M 4.0 750M 550K | E 2N2341 Ss; N HPA 15W |] c] 175 50 40/0 40 | 100 750M 4.0 750M 350K | E 2N2342 8] N HPA I5W] Cc} 175 100 40) 0 LO 40 750M 3.0 750M 550K | oN} S| N HPA 1i5W] Cc | 175 100 40/0 40] 100 750M 2.5 750M 350K 2N234 thru Thyristors, see Table on Page 1-154 2N2348 2N2349 S|] N AFA 150M | A | 200 40 24 | 0 | 120 | 250 10M 1.5 LOM 60] FE 2N2350 S| N HSA 400M | A | 200 60 40 | 0 | 100] 300 150M 0.35 150M 2.5]1E 2N2350A |S} N HSA 400M | A | 200 60 40] 0] 100 | 300 150M 0.25 150M 2.5 ]F 2N2351 S| N HSA 400M } A | 200 80 50] 0 40 | 120 150M 0.35 150M 2.5]/E 2N2351A 1 S| N HSA | 400M | A | 200 80 5010] 40)120] 150M] 0.25 150M} 2.5 |/E 2N2352 S)N HSA 400M | A | 200 60 40]0 20 60 150M 0.35 150M 2.5]/E 2N2352A]S1N HSA 400M | A | 200 60 40} 0 20 60 150M 0.25 150M 2.514E 2N2353 S{[N HSA 400M | A | 200 45 2510 20 150M 0.35 150M 2.5/5 2N2353A |] S|N HSA 400M | A { 200 45 2570 20 150M 0.25 150M 2.5 ])E 2N2354 N AFC | 0,18WI A 85 20 15 |R 50 | 50 35M 2N2356 S|] N CHP 0.6W } A | 200 25 7.0/0 50M | T 2N2356A 1 S| N CHP 0.6W } A | 200 25 7.0/0 50M | T 2N2357 G| P PMS 170W | C | 110 60 30]/0] 30; 90 20A 0,9 50A 20}E | 0.6M|T 2N2358 |G] P PMS L70W | C | 110 100 60;0] 30] 90 20A 0.9 50A 20)E | 0.6M|T 2N2359 G\P PMS 170W | c | 110 120 8a] 0 30 90 20A 0.9 504 20] E 0.6M)T 2N2360 G]} Pe) 2N3283 9-51 RFC 60M 7, A 1 125 20 20/0 10 2.0M 2N2361 G| P | 2N3284 9-51 REC 60M | A {125 20 20/0 10 2.0M 2N2362 G| P| 2N3284 9-51 RFC 60M | A | 100 20 20/5 10 2.0M 2N2363 GI P RFA 75M | A | 100 30 20/0 10 | 200 2.0M lO|/E 250M | T 2N2364 SEN HSss 400M | A | 200 120 80] 0 40 | 120 150M 0.35 150M 50M | T 2N23644 1S|N HSs 400M | A | 200 120 80 {0 40 | 120 150M 0.25 150M 50M | T 2N2368 S| N | 2N3227 8-130} HSS 360M | A | 200 40 4015S 20 60 10M 0.25 LOM 400M | T 2N2369 S| N | 2N3227 8-130] HSS 360M | A | 200 40 40} S 40 | 120 10M 0.25 10M 500M | T 2N2369A | S| N] 2N3227 8-130] HSS 360M | A | 200 40 40]|s 120 10M 0.2 10M 500M | T 2N2370 Si P LNA 0,2W | A | 200 15 15] 0 15 25* IS], E 2N2371 | S| P LNA] 0.2W 4A | 200 15 15|}0] 20 25% 20/E 2N2372 |s|P LNA | O.15W 1A | 200 15 15 |9o0 15 25% IS |E 2N2373 Ss; P LNA | 0.15W | A | 200 15 15 | 0 20 25% 20/5 2N2374 G| P | 2N3427 6-41 AFC 250M | A | 100 35 35 { S | 100 } 300 100M 100 | E 2N2375 G| P| 2N1193 6-30 AFC 250M | A | 100 35 35 18 35 | 110 LOOM 35 | E 2N2376 G| P| 2N1193 6-30 AFC 250M | A | 100 35 35,8 35 | 110 100M 35 /7E 2N2377 S|] P RFA 150M | A | 140 25 25] 0 10 | 100 5.0M I5|E 8.0M) T 2N2378 |S] P RFA 150M | A | 140 10 10};07 15 15M 7.2M | T 2N2379 |G] P PMS 150W | Cc |] 95 100} 80)S | 25 37 | 5.0A 1.0 154 4,0K|E 2N2380 S| N HSss 600M | A | 175 80 40/0 20 | 120 150M 1.3 150M 100M | T 2N2380A } S] N HSS | 600M] A } 175 80 4040] 20] 120 150M 1.3 150M 60 | E 100M | T 2N2381 | G| P 8-136] HSS | 300M | A | 100 30 i5|oO] 40 200M | 0.40] 200M 300M | T 2N2382 G)P 8-136] HSS 300M | A | 100 45 20) 0 40 200M, 0.40 250M 300M 4 T 2N2383 S| N LPA 85W | C | 180 80 60] 0 20 60 1.54 1.0 1.54 15 j,E 30K} E 2N2384 SEN LPA 85w ic] 180 80 60/0 20 60 1.5A 1,0 L.5A I5/E 30K | E 2N2386 Field Effect Transistor, see Table on Page 1-166 2N2387 S|[N AFA 300M | A {175 45 4510 40 | 120 Lox 1.0 1OM 60 /E 30M | T 2N2388 | S| N AFA} 300M | A | 175 45 45 | 0 | LOO } 300 10* 1.0 10M | 150] E 30M | T 2N2389 S| N AFA 450M | A | 200 75 50 |R 40 | 120 150M 1.5 150M BO, E 60M | T 2N2390 S| N AFA 450M | A | 200 75 50} R | 100 | 300 150M 1.5 150M S50]E 70M | T 2N2391 S| P AFA 300M | A | 175 25 20/0 15 45 10M 0.6 10M I5|/E 140M | T 2N2392 S| P AFA 300M | A | 175 25 20/0 30 90 10M 0.6 10M 307E 140M | T 2N2393 Ss] P AFA 450M] A | 175 50 35 | 0 20 45 150M 1.5 150M 15 | E 50M |] T 2N2394 S|] P APA A50M]A 4175 50 3510 30 90 150M 1.5 150M 25 )5 60M | T 2N2395 S|N AFA 450M | A | 200 60 40/0 20 60 150M 1.0 150M 40M | T 2N2396 S| N AFA 450M | A } 200 60 40] 0 40 | 120 150M 1.0 150M 50M | T 2N2397 S|N HSs 300M | A | 200 35 15} 0 25 | 120 10M 0.30 1OM 200M | T 2N2398 G| P | 2N3284 9-51 RFC 60M A | 100 20 20/58 10 2.0M 2N2399 G| P | 2N3284 9-51 RFC 60M A | 100 20 20|Ss LO 2.0M 2N2400 G| P| 2N964 8-74 HSS 150M | A | 100 12 7.0]0 30 10M 0.22 10M 150M | T 2N2401 | G| P | 2N964 8-74 | HSS 150M | A | 100 15 10;0] 50 10M 0.2 10M 200M | T 2N2402 |G] P | 2N2956 8-173] Hss 150M } A | 100 18 12} 0] 60 10M 0.2 10M 250M | T 2N2403 S| N MSA 1.0W | A | 200 60 6010 20 60 0.6A 1.5 0.64 147M | T 2N2404 S| N MSA 1,0W | A | 200 60 60] 0 40 | 120 0.64 1.5 0.64 147M | T 2N2405 S] NW} 2N3498 8-232} AFA 5.0W) Cc 120 90) 0 60 | 200 150M 0.5 150M 50) E 2N2410 S|] N 8-140] HSS 800M {| A | 200 60 30 | 0 30 | 120 10M 200M | T 2N2411 S| P | 2N3250 8-208] HSS 300M | A | 200 25 2010 20 60 10M 0.2 LOM 140M | T 2N2412 S| P | 2N3250 8-208] Hss 300M | A | 200 25 2010 40 | 120 10M 0.2 10M 140M | T 2N2413 S|N RFA 300M | A {175 40 18} 0 30 | 120 10M 0.4 LOM 300M | T 2N2414 S|] N SPP 500M | A { 200 60 40 ]R 50 | 250 LOM 1.2 50M SO] E 50M ;T 2N2415 GI P RFA 75M [A 7] 100 15 10) 0 10 | 200 2.0M 1S |E 500M | T 2N2416 GP RFA 75M | A | 100 15 10 | 0 }8.0 20 2.0M 10] E 400M | T 2N2417 thru Unijunction Transistors, see Table on Page 1-174 2N2422 2N2423 G| P | 2N3616 7-121| PMS 90W | c | 100 00 BO, V 20 | 100 2.0A 1. 5.0A 3.0K | 2N2424 S| P MSS 375M | A | 160 40 5.0/0 30 | 200 5.0M 0.3 15M 15M 1-128GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS (SILICON) Switching and General Purpose Transistors Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N696 2N1991 2N2330 2N1983 2N697 | 2N2331 2N1984 2N718 2N1420 29 2N2195 30 2N2218 | 2N3133 2N2218 | 2N2800 2N2219 | 2N3134 2N2219 | 2N2801 2N2221 | 2N3135 2N2221 | 2N2837 2N2222 | 2N3136 2N2222 | 2N2838 2N3299 | 2N3133 2N3300 | 2N3134 2N3301 | 2N3135 39 2N3302 | 2N3136 49 2N758 2N3250 2N2218A| 2N3250 2N2194 | 2N2904 2N2192 | 2N3244 2N3506 2N795 2N3251 2N2219A! 2N3251 2N2218A} 2N2905 2N2193 | 2N3245 2N3507 2N760 MM4048 2N22214! 2N2219A) 2N2906 2N915 2N2222A 2N2221A] 2N2907 2N929 2N2224 2N2222A!| 2N3485 2N930 2N3946 2N3486 2N3946 2N3947 2N4890 59 2N3947 60 2N758A | 2N3798 2N910 2N3250A 2N656 2N2904A 2ZN759A | 2N3799 2N911 2N3251A 2N699 2N2905A 2N760A | 2N3250A 2N1990 2N2906A 2N929A | 2N3251A 2N2907A 2N9304 2N3485A MM2483 2N3486A 79 MM2484 80 2N739 2N3494 2N720A | 2N3494 2N720A 2N3019 Y 2N740 2N3496 2N1893 | 2N3496 2N3019 2N3020 99 2N2405 2N3020 100 2N4924 | 2N3495 2N3498 | 2N3495 2N3498 | 2N3634 \ 2N3497 2N3499 | 2N3497 2N3499 | 2N3635 2N4928 2N4924 | 2N9634 2N4924 2N3635 149 2N4928 150 2N3114 | 2N4929 2N3500 | 2N3635 2N3500 | 2N3636 2N4925 | 2N4930 2N3501 | 2N3637 2N3501 | 2N3637 2N4926 2N4925 | 2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NW Switching and General Purpose Transistors anI711 For Specifications, See 2N718A Data Sheet 2N1893 (siticon) ete Ose ~ V 2N2405 f; = 50 MHz (JAN 2N1893 Available) NPN silicon annular transistors designed for medium- power amplifier and switching applications. MAXIMUM RATINGS Rating Symbol | 2N1893 | 2N2405 | unit Collector-Emitter Voltage Voro 80 90 Vde Collector-Emitter Voltage VoER 100 140 Vde Collector-Base Voltage Yon 120 Vde Emitter- Base Voltage Yep 7.0 Vde Collector Current I, 0.5 1.0 Adc Total Dr issi i t = 25% - . Collector connected otal Device Dissipation @ T, 25C Py 0.8 1.0 watt Derate above 25C 4.57 5.71 mwec to case - Total Device Dissipation @ Te = 25C Py 3.0 5.0 Watts Derate above 25C 17,2 28.6 mw/C Operating and Storage Junction Temperature Range Ts. Tote -65 to +200 C (TO-5) THERMAL CHARACTERISTICS Characteristic Symbol 2N1893 | 2N2405 | unit Thermal Resistance. Junction to Case 930 58.3 35 C/W Thermal Resistance, Junction to Ambient oR 219 175 C/W ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* BV eye) Vde (Ig = 30 mAdc, I, = 9) 2N1893 CEO(sus) 80 - Mg = 100 mAdc, Ihe 0) 2N2405 90 - Collector-Emitter Sustaining Voltage BYCER(sus) Vde (I, = 100 mAde, Ryg = 10 ohms) 2N1893 - 100 - 2N2405 140 = Collector-Base Breakdown Voltage BVoro Vdc (L, = 100 uAde, I, = 0) 120 - Cc E Emitter-Base Breakdown Voltage BVERO Vde a, = 100 wAdc, I, = 0) 7.0 - Cc Collector Cutoff Current logo LAdc = - 0.01 Voz 90 Vac, I; 0) (V, = 90 Vde, I, = 0, T, = 150C) 2N1893 - 15 cB E A 2N2405 - 10 Emitter Cutoff Current leBo pAdc (Vor = 5.0 Vdc, Io = 0) - 0.01 8-98- Switching and General Purpose Transistors 2N1893 , 2N2405 (continued) ELECTRICAL CHARACTERISTICS (continued) [ Characteristic | Symbol Min Max Unit | ON CHARACTERISTICS DC Current Gain* hen* - My = 0.1 mAdc, Vor = 10 Vde) 2N1893 20 - Me = 10 mAdc, Vor = 10 Vdc) 2N1893 35 - Cy = 10 mAdc, Vor = 10 Vdc, Ty = -55C) 2N1893 20 - Mg = 150 mAdc, Vopr = 10 Vdc) 2N1893 40 120 2N2405 60 200 Collector-Emitter Saturation Voltage Vor t) Vde (I, = 50 mAde, I,, = 5.0 mAdc) 2N1893 Sa - 1.2 lg = 150 mAdc, Ib = 15 mAdc) 2N1893 - 5.0 2N2405 - 0.5 Base-Emitter Saturation Voltage Ver( t) Vde (Ig = 50 mAdc, 5, = 5.0 mAdc) 2N1893 Sa - .9 Ml = 150 mAdc, I; = 15 mAdec) 2N1893 - 1.3 2N2405 - 1.1 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fp MHz Mg = 60 mAdc, Vor = 10 Vde, f = 20 MHz) 2N1893 50 - Output Capacitance Cob pF (Vop = 10 Vide, Ip = 0, 100 kHz = f= 1.0 MHz) - 45 Input Capacitance Cin pF (Vor = 0.5 Vdc, To = 0, 100 kHz = f 1.0 MHz) 2N1893 - 85 Input Impedance hp ohms Te = 1.0 mAdc, Voz = 5,0 Vde, f = 1.0 kHz) 2N1893 t 20 30 lg = 5,0 mAdc, Vop = 10 Vde, f = 1.0 kHz) 2N1893, 2N2405 4. 8.0 Voltage Feedback Ratio bop x 10-4 Ig = 1.0 mAdc, Vor = 5.0 Vde, f = 1.0 kHz) 2N1893 - 1.25 Qe = 5.0 mAdc, Von = 10 Vdc, f = 1.0 kHz) 2N1893 - 1.5 2N2405 - 3.0 Small-Signal Current Gain hee - Gy = 1.0 mAdc, Vor =5.0 Vdc, f = 1.0 kHz) 2N1893 30 100 Mg = 5.0 mAdc, Vor = 5,0 Vdc, f = 1.0 kHz) 2N2405 50 275 lg = 5.0 mAdc, Vor = 10 Vdc, f = 1.0 kHz) 2N1893 45 - Output Admittance Bob yumho (Ig = 1.0 mAdc, VQ, = 5.0 Vde, f = 1.0 kHz) 2N1893 - (5 lg = 5.0 mAde, Voz = 10 Vde, f = 1.0 kHz) 2N1893, 2N2405 - * Pulse Test: Pulse Width 300 ys, Duty Cycle = 2.0%. 8-99