a Bp, NEW ENGLAND SEMICONDUCTOR OPA AU |: thru 1N3015B 10 WATT SILICON ZENER DIODES 0 Available in Voltages from 6.8 thru 200 V FEATURES: @ ZENER VOLTAGE 6.8 TO 200 V POLARITY: 1N2970 -1N3015: Std. Polarity is anode to stud. Reverse polarity indicated by suffix "R". @ VOLTAGE TOLERANCES; +5%, + 10%, + 20% e HIGHLY RELIABLE AND RUGGED @ HERMETICALLY SEALED @ = =MATTE TIN PLATED @ CUSTOM DESIGNS AVAILABLE ~ CONSULT FACTORY MAXIMUM RATINGS: Junction and Storage Temperatures -65C to +175C DC Power Dissipation: Power Derating: Forward Voltage @ 2.0 A: 10 Watts 80 mW/C above 50C 1.5 Volts Max DO-4 PACKAGE OUTLINE 0.141 DIA. 0.40 DIA. x MAX. 0.250 VAX Meets JEDEC Outhre - 0.800" Max. All Dimensions in inches 10 - 32 UNF-2A (MOD) Pitch Dia. 7" 405 Max. 0.060" MIN 1 ao I" 10 THREADS O- HN cA Ai 10-32 UNF-2A Hh tun ilk Hi a 060" DIA. 0.175 0.075" 0.453" 0.422" 1900 12 Zir, ZENER IMPEDANCE (OHMS) Pg RATED POWER OJSSIPATION WATTS ? 1N2991B 1.0 1N2984B 9 25 75 100 1250S(s150s175 : STUD TEMPERATURE (C) 10 100 1000 ler ZENER CURRENT (mA) POWER DERATING CURVE TYPICAL ZENER IMPEDANCE vs. ZENER CURRENT NEOO1 1/96 So = RMS VALUE OF 60 CPS TEST CURRENT SET EQUAL TO 10% OF |, 1N3015B iy 1N3005B NEW ENGLAND SEMICONDUCTOR 6 Lake Street 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 Lawrence, MA 01841 T4-4.8-860-1106 REV: -- 1N2970B { thru BD ew ENGLAND SEMICONDUCTOR a) NOMINAL MAX. DYNAMIC MAX. DC ZENNER ZENER TYP. MAX ZENER IMPEDANCE CURRENT TEST TEMP LEAKAGE TYPE* VOLTAGE (iw) @ 75'C CURRENT COEFF CURRENT POLARITY V2 @ Ig Zo @ ler Zz @ ImA (17x) STUD TEMP. Igy yz Ip @ Ve VOLTS OHMS OHMS mA mA %f'C | uA Volts 1N2970B 68 1.2 500 1320 370 .040 150 5.2 1N2971B 75 13 250 1180 335 045 100 57 1N2972B 8.2 1.5 250 1040 305 048 50 6.2 1N2973B a1 2.0 250 960 275 051 25 6.9 1N2974B 10 3 250 860 250 055 25 7.6 1N2975B Il 3 250 780 230 060 10 8.4 1N2976B 12 3 250 720 210 065 10 9.1 STD. 1N2977B 13 3 250 660 190 065 10 9.9 1N2978B 14 3 250 600 180 070 10 10.5 POLARITY 1N2979B 15 3 250 560 170 070 10 11.4 1N2980B 16 4 250 530 155 070 10 12.2 ANODE IN2981B 17 4 250 500 145 075 10 13.0 1N2982B 18 4 250 460 140 075 10 13.7 TO 1N2983B 19 4 250 440 130 075 10 14.0 1N2984B 20 4 250 420 125 .075 10 15.2 STUD IN2985B 22 5 250 380 115 080 10 16.7 IN2986B 24 5 250 350 105 .080 10 18.2 1N2987B 25 6 250 310 100 .080 10 18.2 IN2988B 27 7 250 300 95 085 10 20.6 EN2989B 30 8 300 280 85 085 10 22.8 1N2990B 33 9 300 260 75 085 10 25.1 1N2991B 36 10 300 230 70 .085 10 274 1N2992B 39 11 300 210 65 -090 10 29.7 1N2993B 43 12 400 195 60 .090 10 32.7 1N2994B 45 13 400 185 55 .090 10 33.0 1N2995B 47 14 400 175 55 .090 10 35.8 1N2996B 50 15 500 165 50 .090 10 36.0 1N2997B 51 15 500 160 50 .090 10 38.8 1N2998B 52 15 500 160 50 .090 10 39.0 1N2999B 56 16 500 150 45 .090 10 42.6 1N3000B 62 17 600 130 40 .090 10 47.1 1N3001B 68 18 600 120 37 .090 10 51.7 1N3002B 75 22 600 110 33 090 10 56.0 1N3003B 82 25 700 100 30 .090 10 62.2 1N3004B 91 35 800 85 28 .090 10 69.2 1N3005B 100 40 900 80 25 .090 10 76.0 1N3006B 105 45 1000 75 25 .095 10 76.0 1N3007B 110 55 1100 72 23 095 10 83.6 1N3008B 120 75 1200 67 20 095 10 91.2 IN3009B 130 100 1300 62 19 095 10 98.8 IN3010B 140 125 1400 58 18 095 10 100.0 IN3011B 150 175 1500 54 17 095 10 114.0 1N3012B 160 200 1600 50 16 .095 10 121.6 IN3013B 175 250 1750 46 14 .095 10 135.0 IN3014B 180 260 1850 45 14 095 10 136.8 IN3015B 200 300 2000 40 12 .100 10 152.0 * Suffix 'B indicates + 5% tolerance, * Suffix 'A' indicates + 10% tolerance, * No sufix indicates + 20% tolerance. 6 Lake Street Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-1106 REV: -- NEW ENGLAND SEMICONDUCTOR