irNote: Pins 1 & 2 must be electrically
connected at the printed circuit board.
DS30354 Rev. 4 - 2 1 of 3 MBRM3100
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MBRM3100
3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
·Case: POWERMITEâ3, Molded Plastic
·Plastic Material: UL Flammability
Classification Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Polarity: See Diagram
·Marking: See Page 3
·Weight: 0.072 grams (approx.)
·Ordering Information: See Page 3
Mechanical Data
B
C
D
E
G
JH
K
L
M
A
P
12
3
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT
S
INK
C
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
RMS Reverse Voltage VR(RMS) 70 V
Average Rectified Output Current (Also see Figure 5) IO3A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method) @ TC = 90°C
IFSM 50 A
Typical Thermal Resistance Junction to Soldering Point RqJS 3.5 °C/W
Typical Thermal Resistance Junction to Case RqJC 1.6 °C/W
Operating Temperature Range Tj-55 to +125 °C
Storage Temperature Range TSTG -55 to +150 °C
·Guard Ring Die Construction for
Transient Protection
·Low Power Loss, High Efficiency
·High Reverse Breakdown Voltage
·For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
TCUDORPWEN
Maximum Ratings @ TA = 25°C unless otherwise specified
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 1) V(BR)R 100 ¾¾VIR = 0.2mA
Forward Voltage (Note 1) VF
¾
¾
¾
¾
0.72
0.60
0.80
0.69
0.76
¾
¾
¾
V
IF = 3A, Tj = 25°C
IF = 3A, Tj = 100°C
IF = 6A, Tj = 25°C
IF = 6A, Tj = 100°C
Reverse Current (Note 1) IR¾
¾
3
0.35
100
20
mA
mA
Tj = 25°C, VR = 100V
Tj = 100°C, VR = 100V
Total Capacitance CT¾100 ¾pF f = 1.0MHz, VR = 4.0V DC
POWERMITEâ3
Dim Min Max
A4.03 4.09
B6.40 6.61
C.864 .914
D1.83 NOM
E1.10 1.14
G.173 .203
H5.01 5.17
J4.37 4.43
K.173 .203
L.71 .77
M.36 .46
P1.73 1.83
All Dimensions in mm
Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30354 Rev. 4 - 2 2 of 3 MBRM3100
www.diodes.com
TCUDORPWEN
10
100
1000
10
,
000
1.0
0.1
020 40 60 100
80
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fi
g
. 2 T
y
pical Reverse Characteristics
T= 125°C
j
T= 100°C
j
T= 75°C
j
T= 25°C
j
0
10
20
30
40
5
0
110100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fi
g
. 3 Max Non-Repetitive Peak Fwd Sur
g
e Current
Single Half-Sine-Wave
(JEDEC Method)
T = 90°C
C
0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
g
.1 T
y
pical Forward Characteristics
T= 25°C
j
T = 100°C
j
10
100
1000
0.1 1 10 100
C , TOTAL CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
R
Fi
g
.4 T
y
pical Total Capacitance vs. Reverse Volta
g
e
T= 25°C
j
f= 1MHz
DS30354 Rev. 4 - 2 3 of 3 MBRM3100
www.diodes.com
(Note 7)
Device Packaging Shipping
MBRM3100-13 POWERMITEâ3 5000/Tape & Reel
Marking Information
MBRM3100 = Product type marking code
= Manufacturers’ code marking
YYWW=Datecodemarking
YY = Last digit of year ex: 02 for 2002
WW=Weekcode01to52
(K) = Factory Designator
YYWW(K)
MBRM3100
Ordering Information
Notes: 2. TA = TSOLDERING POINT, RqJS = 3.5°C/W, RqSA = 0°C/W.
3. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 30-35°C/W.
4. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
115-125°C/W.
5. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
POWERMITE is a registered trademark of Microsemi Corporation.
TCUDORPWEN
0
0.5
1
1.5
2.5
2
3
3.5
4
25 50 75 100 125 150
I , DC FORWARD CURRENT (A)
F
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 5 DC Forward Current Deratin
g
Note 2
Note 4
Note 3
0
1
2
3
4
01234567
P , FORWARD POWER DISSIPATION (W)
F
I , FORWARD CURRENT (A)
F
Fi
g
. 6 Forward Power Dissipation
T = 125°C
j
Note 6
Note 5
