EC103D1 Sensitive gate thyristor Rev. 01 -- 1 November 2001 Product data M3D186 1. Description Very sensitive gate thyristor intended to be interfaced directly to low power gate trigger circuits, with very low drive current capability. Product availability: EC103D1 in SOT54 (TO-92). 2. Features Blocking voltage to 400 V On-state RMS current to 0.8 A Ultra low gate trigger current Low cost package. 3. Applications Earth leakage circuit breakers Solid state relays General purpose switching. 4. Pinning information Table 1: Pinning - SOT54 (TO-92), simplified outline and symbol Pin Description 1 anode (a) 2 gate (g) 3 cathode (k) Simplified outline 1 Symbol 1 2 3 2 3 MSB033 SOT54 (TO-92) MBL308 EC103D1 Philips Semiconductors Sensitive gate thyristor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit 25 C Tj 125 C - 400 V VDRM repetitive peak off-state voltage VRRM repetitive peak reverse voltage - 400 V IT(RMS) on-state current (RMS value) - 0.8 A ITSM non-repetitive peak on-state current - 8.0 A Conditions Min Max Unit 25 C Tj 125 C - 400 V - 400 V 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tlead 83 C - 0.5 A IT(RMS) on-state current (RMS value) all conduction angles - 0.8 A ITSM non-repetitive peak on-state current half sine wave; Tj = 25 C prior to surge t = 10 ms - 8.0 A t = 8.3 ms - 9.0 A t = 10 ms - 0.32 A2s ITM = 2.0 A; IG = 10 mA; dIG/dt = 100 mA/s - 50 A/s I2t I2t dIT/dt rate of rise on-state current for fusing IGM peak gate current - 1.0 VGM peak gate voltage - 5.0 V VRGM peak reverse gate voltage - 5.0 V PGM peak gate power - 2.0 W PG(AV) average gate power - 0.1 W Tstg storage temperature -40 +150 C Tj operating junction temperature - +125 C over any 20 ms period (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data Rev. 01 -- 1 November 2001 2 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor 003aaa111 0.6 = 180 Ptot ITSM (A) 8 = 120 (W) = 90 0.4 003aaa110 10 = 60 = 30 6 4 0.2 2 0 0 0 0.2 0.4 IT(AV) (A) 1 0.6 = conduction angle 102 10 n 103 n = number of cycles at f = 50 Hz Fig 1. Maximum on-state dissipation as a function of average on-state current; typical values. 003aaa116 1.0 IT(RMS) (A) Fig 2. Maximum permissible non-repetitive peak on-state current as a function of number of cycles for sinusoidal currents; typical values. 003aaa117 2.0 IT(RMS) (A) 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0 -50 0 50 100 150 Tlead (C) 0 10-2 10-1 1 tsurge (s) 10 f = 50 Hz; Tlead 83C. Fig 3. Maximum permissible on-state current (RMS value) as a function of lead temperature; typical values. Fig 4. Maximum permissible repetitive on-state current (RMS value) as a function of surge duration for sinusoidal currents; typical values. (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data Rev. 01 -- 1 November 2001 3 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-lead) thermal resistance from junction to lead Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; lead length = 4 mm Value Unit 80 K/W 150 K/W 7.1 Transient thermal impedance 003aaa108 102 Zth(j-lead) (K/W) 10 PD t tp 1 10-4 10-3 10-2 10-1 10 1 t p (s) 10 2 Fig 5. Transient thermal impedance from junction to lead as a function of pulse duration. (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data Rev. 01 -- 1 November 2001 4 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; gate open circuit - 3 12 A IL latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 k - 2 6 mA IH holding current - 2 5 mA VT on-state voltage IT = 1.0 A - 1.2 1.35 V VGT gate trigger voltage IT = 10 mA; gate open circuit VD = 12 V - 0.5 0.8 V VD = VDRM (max); Tj = 125 C 0.2 0.3 - V - 50 100 A - 50 100 A ID off-state current IR reverse current VD = VDRM (max); VR = VRRM (max); Tj = 125 C; RGK = 1 k Dynamic characteristics dVD/dt rate of rise of off-state voltage VD = 0.67 VDRM(max); Tcase = 125 C; exponential waveform; RGK = 1 k - 25 - V/s tgt gate controlled turn-on time ITM = 2.0 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A /s - 2 - s tq commutated turn-off time VD = 0.67 VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A /s; dVD/dt = 2 V/s; RGK = 1 k - 100 - s (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data Rev. 01 -- 1 November 2001 5 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor 003aaa109 3.0 003aaa114 2.0 a IT (A) 1.6 125 C max 2.0 1.2 125 C typ 0.8 1.0 25 C typ 0 0.4 0.4 0 1.2 0.8 VT (V) -50 1.6 0 50 100 Tj (C) 150 I L ( Tj ) a = ----------------I L ( 25 C ) Fig 6. On-state current as a function of on-state voltage; typical and maximum values. Fig 7. Normalized latching current as a function of junction temperature; typical values. 003aaa113 003aaa112 1.6 2.0 a a 1.6 1.2 1.2 0.8 0.8 0.4 0.4 -50 0 0 50 100 150 -50 0 Tj ( C) V GT ( Tj ) a = ----------------------V 100 Tj ( C) 150 I GT ( Tj ) a = --------------------I GT ( 25 C ) GT ( 25 C ) Fig 8. Normalized gate trigger voltage as a function of junction temperature; typical values. Fig 9. Normalized gate trigger current as a function of junction temperature; typical values. (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data 50 Rev. 01 -- 1 November 2001 6 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor 9. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 10. SOT54 (TO-92). (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data Rev. 01 -- 1 November 2001 7 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor 10. Revision history Table 6: Revision history Rev Date 01 20011101 CPCN Description - Product data; initial version (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data Rev. 01 -- 1 November 2001 8 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Product data Rev. 01 -- 1 November 2001 9 of 11 EC103D1 Philips Semiconductors Sensitive gate thyristor Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Product data Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08574 Rev. 01 -- 1 November 2001 10 of 11 Philips Semiconductors EC103D1 Sensitive gate thyristor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 (c) Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 November 2001 Document order number: 9397 750 08574