EC103D1 - Philips Semiconductors / NXP Semiconductors

EC103D1

Sensitive gate thyristor

Rev. 01 — 1 November 2001 Product data

M3D186

1. Description

Very sensitive gate thyristor intended to be interfaced directly to low power gate

trigger circuits, with very low drive current capability.

Product availability:

EC103D1 in SOT54 (TO-92).

2. Features

■Blocking voltage to 400 V

■On-state RMS current to 0.8 A

■Ultra low gate trigger current

■Low cost package.

3. Applications

■Earth leakage circuit breakers

■Solid state relays

■General purpose switching.

4. Pinning information

Table 1: Pinning - SOT54 (TO-92), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 anode (a)

SOT54 (TO-92)

2 gate (g)

3 cathode (k)

MSB033 MBL308

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 2 of 11

5. Quick reference data

6. Limiting values

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

VDRM repetitive peak off-state voltage 25 °C≤Tj≤125 °C - 400 V

VRRM repetitive peak reverse voltage - 400 V

IT(RMS) on-state current (RMS value) - 0.8 A

ITSM non-repetitive peak on-state current - 8.0 A

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage 25 °C≤Tj≤125 °C - 400 V

VRRM repetitive peak reverse voltage - 400 V

IT(AV) average on-state current half sine wave; Tlead ≤83 °C - 0.5 A

IT(RMS) on-state current (RMS value) all conduction angles - 0.8 A

ITSM non-repetitive peak on-state current half sine wave; Tj= 25 °C prior to

surge

t=10ms - 8.0 A

t = 8.3 ms - 9.0 A

I2tI

2t for fusing t =10 ms - 0.32 A2s

dIT/dt rate of rise on-state current ITM = 2.0 A; IG= 10 mA;

dIG/dt = 100 mA/µs-50A/µs

IGM peak gate current - 1.0 Α

VGM peak gate voltage - 5.0 V

VRGM peak reverse gate voltage - 5.0 V

PGM peak gate power - 2.0 W

PG(AV) average gate power over any 20 ms period - 0.1 W

Tstg storage temperature −40 +150 °C

Tjoperating junction temperature - +125 °C

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 3 of 11

α= conduction angle n = number of cycles at f = 50 Hz

Fig 1. Maximum on-state dissipation as a function of

average on-state current; typical values. Fig 2. Maximum permissible non-repetitive peak

on-state current as a function of number of

cycles for sinusoidal currents; typical values.

f = 50 Hz; Tlead ≤83°C.

Fig 3. Maximum permissible on-state current (RMS

value) as a function of lead temperature; typical

values.

Fig 4. Maximum permissible repetitive on-state

current (RMS value) as a function of surge

duration for sinusoidal currents; typical values.

0.2

0.4

0.6

00.2 0.4 0.6

α = 180ο

α = 120ο

α = 90ο

α = 60ο

α = 30ο

Ptot

(W)

IT(AV) (A)

003aaa111

ITSM

(A)

110 102103

003aaa110

IT(RMS)

(A)

1.0

0.8

0.6

0.4

0.2

Tlead (οC)

-50 0 50 100 150

003aaa116

IT(RMS)

(A)

1.0

2.0

110

10-1

10-2 tsurge (s)

003aaa117

1.5

0.5

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 4 of 11

7. Thermal characteristics

7.1 Transient thermal impedance

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

Rth(j-lead) thermal resistance from junction to lead 80 K/W

Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board;

lead length = 4 mm 150 K/W

Fig 5. Transient thermal impedance from junction to lead as a function of pulse duration.

Zth(j-lead)

(K/W)

10−410−310−210−110 102

102

tp (s)

003aaa108

tpt

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 5 of 11

8. Characteristics

Table 5: Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD= 12 V; IT= 0.1 A; gate open

circuit -3 12µA

ILlatching current VD= 12 V; IGT = 0.5 mA; RGK =1kΩ-2 6 mA

IHholding current - 2 5 mA

VTon-state voltage IT= 1.0 A - 1.2 1.35 V

VGT gate trigger voltage IT= 10 mA; gate open circuit

VD= 12 V - 0.5 0.8 V

VD=V

DRM (max); Tj= 125 °C 0.2 0.3 - V

IDoff-state current VD=V

DRM (max); VR=V

RRM (max);

Tj= 125 °C; RGK =1kΩ- 50 100 µA

IRreverse current - 50 100 µA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage VD= 0.67 VDRM(max);T

case = 125 °C;

exponential waveform; RGK =1kΩ-25- V/µs

tgt gate controlled turn-on

time ITM = 2.0 A; VD=V

DRM(max);

IG= 10 mA; dIG/dt = 0.1 A /µs-2 - µs

tqcommutated turn-off time VD= 0.67 VDRM(max); Tj= 125 °C;

ITM = 1.6 A; VR=35V;

dITM/dt=30A /µs; dVD/dt=2V/µs;

RGK =1kΩ

- 100 - µs

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 6 of 11

Fig 6. On-state current as a function of on-state

voltage; typical and maximum values. Fig 7. Normalized latching current as a function of

junction temperature; typical values.

Fig 8. Normalized gate trigger voltage as a function of

junction temperature; typical values. Fig 9. Normalized gate trigger current as a function of

junction temperature; typical values.

125 οC typ

125 οC max

(A)

VT (V)

003aaa109

3.0

2.0

1.0

00.4 0.8 1.2 1.6

25 οC typ

2.0

1.6

1.2

0.8

0.4

0-50 0

50 100 150

Tj (οC)

003aaa114

aILTj()

IL25C

()

------------------

0-50 50 100 150

1.6

1.2

0.8

0.4

Tj (οC)

003aaa112

2.0

1.6

1.2

0.8

0.4

00 50 100 150-50

Tj (οC)

003aaa113

aVGT Tj()

VGT 25 C

()

------------------------

=aIGT Tj()

IGT 25 C

()

----------------------

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 7 of 11

9. Package outline

Fig 10. SOT54 (TO-92).

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 5.2

5.0

0.48

0.40

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

2.5

0.66

0.56

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43 97-02-28

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 8 of 11

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20011101 - Product data; initial version

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 9 of 11

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are

stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics

sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes

only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed

use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support appliances, devices, or systems where

malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers

using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips

Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products,

including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or

performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys

no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or

warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Data sheet status[1] Product status[2] Deﬁnition

Objective data Development This datasheet contains data from theobjectivespeciﬁcation for product development. Philips Semiconductors

reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to

improve the design and supply the best possible product.

Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

make changes at any time in order to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure

SNW-SQ-650A.

9397 750 08574

Philips Semiconductors EC103D1

Sensitive gate thyristor

Product data Rev. 01 — 1 November 2001 10 of 11

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825

© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 1 November 2001 Document order number: 9397 750 08574
Contents
Philips Semiconductors EC103D1
Sensitive gate thyristor
1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2
4 Pinning information. . . . . . . . . . . . . . . . . . . . . .  2
5 Quick reference data . . . . . . . . . . . . . . . . . . . . .  2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  3
7 Thermal characteristics. . . . . . . . . . . . . . . . . . .  5
7.1 Transient thermal impedance. . . . . . . . . . . . . .  5
8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  8
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .  9
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . .  10
12 Definitions  . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .  10