2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition Feb. 1999 Features * Low on-resistance R DS =90m typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline LDPAK 4 D 1 1 G S 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3161(L),2SK3161(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 20 V Drain current ID 15 A 60 A 15 A 15 A 15 mJ 75 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK3161(L),2SK3161(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 200 -- -- V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) -- 90 115 m I D = 8A, VGS = 10VNote4 resistance RDS(on) -- 95 125 m I D = 8A, VGS = 4V Note4 Forward transfer admittance |yfs| 16 20 -- S I D = 8A, VDS = 10V Note4 Input capacitance Ciss -- 1600 -- pF VDS = 10V Output capacitance Coss -- 510 -- pF VGS = 0 Reverse transfer capacitance Crss -- 250 -- pF f = 1MHz Turn-on delay time t d(on) -- 20 -- ns I D = 8A, VGS = 10V Rise time tr -- 120 -- ns RL = 3.75 Turn-off delay time t d(off) -- 400 -- ns Fall time tf -- 170 -- ns Body-drain diode forward voltage VDF -- 0.85 -- V I F = 15A, VGS = 0 Body-drain diode reverse recovery time t rr -- 100 -- ns I F = 15A, VGS = 0 diF/ dt =50A/s Note: 4. Pulse test 3 2SK3161(L),2SK3161(S) Main Characteristics Power vs. Temperature Derating I D (A) 60 40 20 10 s 0 1m s s 30 10 10 3 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 100 80 DC 1 0m tio s( n( Tc 1s ho =2 0.3 Operation in this area is 0.1 limited by R DS(on) t) 5C ) Ta = 25 C 0.01 50 100 150 Case Temperature 1 200 5 10 20 50 100 200 500 V DS (V) Typical Transfer Characteristics Typical Output Characteristics 20 Pulse Test 10 V 4V 3.5 V 30 20 3V 10 VGS =2.5 V ID (A) 6V Drain Current 40 2 Drain to Source Voltage Tc (C) 50 I D (A) =1 era 0.03 0 Drain Current PW Op 16 V DS = 10 V Pulse Test 12 8 4 Tc = 75C -25C 25C 0 4 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK3161(L),2SK3161(S) 4 3 2 I D = 15 A 10 A 1 5A 0 Static Drain to Source on State Resistance R DS(on) ( m) Pulse Test 12 4 8 Gate to Source Voltage 400 5, 10 A 15 A 200 V GS = 4 V 5, 10 A 100 15 A 10 V 0 -40 200 VGS = 4 V 100 10 V 50 20 10 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 300 Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 0 40 80 120 160 Case Temperature Tc (C) 1 10 20 50 5 Drain Current I D (A) 2 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 5 Drain to Source On State Resistance R DS(on) (m ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 25 C 20 Tc = -25 C 75 C 10 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK3161(L),2SK3161(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 di / dt = 50 A / s V GS = 0, Ta = 25 C 500 5000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 2000 Ciss 1000 500 Coss 200 100 Crss 50 20 VGS = 0 f = 1 MHz 20 10 0.1 10 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 10 80 40 I D = 15 A V DD = 150 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nc) 12 8 4 0 200 V GS (V) 500 300 Switching Time t (ns) Drain to Source Voltage 120 0 6 V DD = 150 V 100 V 50 V 16 Gate to Source Voltage V DS (V) V DS V GS 40 50 Switching Characteristics 20 160 30 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 20 100 t d(off) tf tr 30 t d(on) 10 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.3 3 1 Drain Current 10 I D (A) 30 100 2SK3161(L),2SK3161(S) Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 20 16 10 V 12 8 V GS = 0, -5 V 4 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 20 I AP = 15 A V DD = 50 V duty < 0.1 % Rg > 50 16 12 8 4 0 25 50 V SD (V) 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK3161(L),2SK3161(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3161(L),2SK3161(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SK3161(L),2SK3161(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SK3161(L),2SK3161(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SK3161(L),2SK3161(S) Cautions 1. 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