2N3053
2N3053A
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A
types are epitaxial planar NPN silicon transistors
designed for general purpose applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N3053 2N3053A UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 0.7 A
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3053 2N3053A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=30V, VEB=1.5V - 250 - - nA
ICEV V
CE=60V, VEB=1.5V - - - 250 nA
IEBO V
EB=4.0V - 250 - 250 nA
BVCBO I
C=100μA 60 - 80 - V
BVCER I
C=100mA, RBE=10Ω (Note 1) 50 - 70 - V
BVCEO I
C=100mA (Note 1) 40 - 60 - V
BVEBO I
E=100μA 5.0 - 5.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 1.4 - 0.3 V
VBE(SAT) I
C=150mA, IB=15mA - 1.7 0.6 1.0 V
VBE(ON) V
CE=2.5V, IC=150mA - 1.7 - 1.0 V
hFE V
CE=2.5V, IC=150mA 25 - 25 -
hFE V
CE=10V, IC=150mA 50 250 50 250
fT V
CE=10V, IC=50mA, f=100MHz 100 - 100 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 15 - 15 pF
Cib V
BE=0.5V, IC=0, f=1.0MHz - 80 - 80 pF
Notes: (1) Pulse width < 300μs, duty cycle < 2%.
TO-39 CASE
R2 (13-December 2013)
www.centralsemi.com
2N3053
2N3053A
SILICON
NPN TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R2 (13-December 2013)
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