BCX71JLT1G General Purpose Transistor PNP Silicon Features * Moisture Sensitivity Level: 1 * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 Vdc Collector - Base Voltage VCBO -45 Vdc Emitter - Base Voltage VEBO -5.0 Vdc IC -100 mAdc Collector Current - Continuous 2 EMITTER 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 1) TA = 25C Derate above 25C PD 350 mW 2.8 mW/C Storage Temperature Tstg 150 C Thermal Resistance, Junction-to-Ambient (Note 1) RJA 357 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm. SOT-23 CASE 318 STYLE 6 MARKING DIAGRAM BJ M G G BJ = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device BCX71JLT1G Package Shipping SOT-23 (Pb-free) 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 3 1 Publication Order Number: BCX71J/D BCX71JLT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -45 - -5.0 - - - -20 -20 40 250 100 250 - 460 - 500 - - -0.25 -0.55 -0.6 -0.68 -0.85 -1.05 -0.6 -0.75 - 6.0 - 6.0 - 150 - 800 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IE = 1.0 Adc, IE = 0) V(BR)EBO Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) Vdc Vdc ICES nAdc Adc ON CHARACTERISTICS DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hFE - Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.25 mAdc) (IC = 50 mAdc, IB = 1.25 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(sat) Base-Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Vdc Vdc Vdc Cobo Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) pF NF dB SWITCHING CHARACTERISTICS Turn-On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) ton Turn-Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 ) toff ns ns TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25C) 10 IC = 10 A 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 7.0 30 A 3.0 2.0 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS 0 100 A 1.0 mA 300 A BANDWIDTH = 1.0 Hz RS IC = 1.0 mA 3.0 2.0 300 A 1.0 0.7 0.5 100 A 30 A 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 10 A 0.1 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 2 5.0k 10k BCX71JLT1G NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = - 5.0 Vdc, TA = 25C) 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 5.0 dB 10 1.0M 500k 500 700 1.0k 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: 0.5 dB en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) 5.0k 2.0k 1.0k 500 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 en2 ) 4KTRS ) In 2RS2 12 4KTRS NF + 20 log10 20k 10k 500 700 1.0k IC, COLLECTOR CURRENT (A) Figure 5. Wideband TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain http://onsemi.com 3 2.0 3.0 5.0 7.0 10 20 30 50 70 100 BCX71JLT1G 1.0 100 TA = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 200 A 150 A 40 100 A 20 50 A 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 1.6 *APPLIES for IC/IB hFE/2 0.8 - 55C to 25C 0.8 25C to 125C 1.6 2.4 0.1 100 300 50 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 0.2 - 55C to 25C 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25C 100 70 50 30 tr 20 100 70 50 30 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 VB for VBE Figure 10. Temperature Coefficients 500 200 25C to 125C *VC for VCE(sat) 0 Figure 9. "On" Voltages 300 40 Figure 8. Collector Characteristics 1.4 0.2 250 A 60 0 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0.1 IB = 400 A 350 A tf 20 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 Figure 11. Turn-On Time - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) Figure 12. Turn-Off Time http://onsemi.com 4 - 50 - 70 -100 BCX71JLT1G 500 10 TJ = 25C TJ = 25C 7.0 VCE = 20 V 300 Cib C, CAPACITANCE (pF) f, T CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) TYPICAL DYNAMIC CHARACTERISTICS 5.0 V 200 100 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product Figure 14. Capacitance hfe 200 @ IC = -1.0 mA 7.0 5.0 VCE = -10 Vdc f = 1.0 kHz TA = 25C 3.0 2.0 1.0 0.7 0.5 0.3 hoe, OUTPUT ADMITTANCE ( mhos) 10 20 50 100 70 50 30 20 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 0.2 Figure 15. Input Impedance 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance 104 IC, COLLECTOR CURRENT (nA) 0.2 0.1 10 200 20 hie , INPUT IMPEDANCE (k ) 5.0 VCC = 30 V 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10-1 10-2 -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140+ 160 TJ, JUNCTION TEMPERATURE (C) Figure 17. Typical Collector Leakage Current http://onsemi.com 5 50 100 BCX71JLT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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