BCX71JLT1 - ON Semiconductor - Datasheet.Directory

August, 2009 − Rev. 3

1Publication Order Number:

BCX71J/D

BCX71JLT1G

General Purpose Transistor

PNP Silicon

Features

•Moisture Sensitivity Level: 1

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO −45 Vdc

Collector − Base Voltage VCBO −45 Vdc

Emitter − Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 1)

TA = 25°C

Derate above 25°C

PD350

2.8

mW/°C

Storage Temperature Tstg 150 °C

Thermal Resistance,

Junction-to-Ambient (Note 1)

RJA 357 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

COLLECTOR

BASE

EMITTER

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BCX71JLT1G SOT−23

(Pb−free)

3000/Tape & Reel

BJ = Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

BJ M G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BCX71JLT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

V(BR)CEO

−45 −

Vdc

Collector−Base Breakdown Voltage

(IE = 1.0 Adc, IE = 0)

V(BR)EBO

−5.0 −

Vdc

Collector Cutoff Current

(VCE = 32 Vdc)

(VCE = 32 Vdc, TA = 150°C)

ICES

−

−20

nAdc

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

hFE

250

100

250

−

460

−

500

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.25 mAdc)

(IC = 50 mAdc, IB = 1.25 mAdc)

VCE(sat)

−

−0.25

−0.55

Vdc

Base−Emitter Saturation Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

VBE(sat)

−0.6

−0.68

−0.85

−1.05

Vdc

Base−Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

−0.6 −0.75

Vdc

Output Capacitance

(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)

Cobo

−6.0

Noise Figure

(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)

−6.0

SWITCHING CHARACTERISTICS

Turn−On Time

(IC = 10 mAdc, IB1 = 1.0 mAdc)

ton

−150

Turn−Off Time

(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 )

toff

−800

TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0

10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

IC = 10 A

100 A

en, NOISE VOLTAGE (nV)

In, NOISE CURRENT (pA)

30 A

BANDWIDTH = 1.0 Hz

RS ≈∞

IC = 1.0 mA

300 A

100 A

30 A

10 A

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

2.0 1.0 mA

0.2

300 A

BANDWIDTH = 1.0 Hz

RS ≈ 0

BCX71JLT1G

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NOISE FIGURE CONTOURS

(VCE = − 5.0 Vdc, TA = 25°C)

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

Figure 3. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (A)

Figure 4. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (A)

0.5 dB

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

IC, COLLECTOR CURRENT (A)

10 Hz to 15.7 kHz

RS, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF +20 log10 ƪen2)4KTRS)In2RS2

4KTRSƫ1ń2

= Noise Voltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the Transistor referred to the input. (Figure 4)

= Boltzman’s Constant (1.38 x 10−23 j/°K)

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

20 30 50 70 100 200 300 500 700 1.0k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

TYPICAL STATIC CHARACTERISTICS

Figure 6. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.003

h , DC CURRENT GAIN

TJ = 125°C

-55°C

25°C

VCE = 1.0 V

VCE = 10 V

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

200

100

BCX71JLT1G

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TYPICAL STATIC CHARACTERISTICS

Figure 7. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 8. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*VC for VCE(sat)

VB for VBE

0.1 0.2 0.5

Figure 9. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS

)

0.002

TA = 25°C

IC = 1.0 mA 10 mA 100 mA

Figure 10. Temperature Coefficients

50 mA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

IC, COLLECTOR CURRENT (mA)

TA = 25°C

PULSE WIDTH = 300 s

DUTY CYCLE ≤ 2.0%

IB = 400 A

350 A

300 A250 A

200 A

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

-55°C to 25°C

25°C to 125°C

-55°C to 25°C

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.2

1.0

0.8

0.6

0.4

0.2

02.4

0.8

1.6

0.8

1.0 2.0 5.0 10 20 50 100

0.1 0.2 0.5

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

150 A

100 A

50 A

Figure 11. Turn−On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 12. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

2.0 5.0 10 20 30 50

1000

3.01.0

t, TIME (ns)

5.0

7.0

100

300

7.0 70 100

VCC = 3.0 V

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 0.5 V

100

200

300

500

700

- 2.0

-1.0

VCC = - 3.0 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

200

- 3.0 - 5.0 - 7.0 - 20

-10 - 30 - 50 - 70 -100

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TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

Figure 13. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 14. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

500

0.5

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz

)

100

200

300

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

Cib

Cob

TJ = 25°C

Figure 15. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , OUTPUT ADMITTANCE ( mhos)

oe 

hie, INPUT IMPEDANCE (k )Ω

2.0 5.0 10 20 50

1.0

0.2

100

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5

VCE = -10 Vdc

f = 1.0 kHz

TA = 25°C

2.0 5.0 10 20 50

1.0

2.0

100

3.0

5.0

7.0

100

200

0.1 0.2 0.5

VCE = 10 Vdc

f = 1.0 kHz

TA = 25°C

hfe ≈ 200

@ IC = −1.0 mA

hfe ≈ 200

@ IC = 1.0 mA

TJ, JUNCTION TEMPERATURE (°C)

104

-4

IC, COLLECTOR CURRENT (nA)

Figure 17. Typical Collector Leakage Current

10-2

10-1

100

101

102

103

-2

0 + 20 + 40 + 60 + 80 + 100 + 120 + 140+ 160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

BCX71JLT1G

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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BCX71J/D

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