Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 27.4
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 17
IDM Pulsed Drain Current ➀110
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁500 mJ
IAR Avalanche Current ➀27.4 A
EAR Repetitive Avalanche Energy ➀15 mJ
dv/dt Peak Diode Recovery dv/dt ➂5.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Package Mounting Surface Temperature 300(for 5 seconds)
Weight 2.6 (Typical) g
PD - 91549C
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, v ery fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited f or applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
oC
A
POWER MOSFET
SURFACE MOUNT(SMD-1)
1/28/01
www.irf.com 1
SMD-1
Product Summary
Part Number RDS(on) ID
IRFN250 0.100 Ω 27.4A
Features:
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nElectrically Isolated
nSurface Mount
nDynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFN250
JANTX2N7225U
JANTXV2N7225U
REF:MIL-PRF-19500/592
200V, N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
IRFN250
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.29 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.100 VGS = 10V, ID = 17A
Resistance — — 0.105 VGS = 10V, ID = 27.4A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 9.0 — — S ( )V
DS > 15V, IDS = 17A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V ,VGS=0V
— — 250 VDS = 160V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 115 VGS =10V, ID = 27.4A
Qgs Gate-to-Source Charge — — 22 nC VDS = 100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 60
td(on) Turn-On Delay Time — — 35 VDD = 100V, ID = 27.4A,
trRise Time — — 190 VGS =10V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 170
tfFall Time — — 130
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 3500 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 700 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 110 —
nA
Ω
➃
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 0.83
RthJ-PCB Junction-to-PC board — 3.0 — Soldered to a copper-clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 27.4
ISM Pulse Source Current (Body Diode) ➀— — 110
VSD Diode Forward Voltage — — 1.9 V Tj = 25°C, IS = 27.4A, V GS = 0V ➃
trr Reverse Recovery Time — — 950 nS Tj = 25°C, IF = 27.4A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 9.0 µC VDD ≤ 30V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from the center of drain
pad to center of source pad.
Ω
www.irf.com 3
IRFN250
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFN250
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13a & b
www.irf.com 5
IRFN250
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFN250
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
1
0
.
www.irf.com 7
IRFN250
➂ ISD ≤ 27.4A, di/dt ≤ 190A/µs,
VDD ≤ 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 1.3mH
Peak IL = 27.4A, VGS = 10V
Footnotes:
Case Outline and Dimensions — SMD-1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/02
PAD ASSIGNMENTS
1- DRAIN
2- GATE
3- SOURCE
