LESHAN RADIO COMPANY, LTD. Switching Transistor PNP Silicon 3 COLLECTOR MMBT3640LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector-Emitter Voltage V CEO -12 Vdc Collector-Base Voltage V CBO -12 Vdc Emitter-Base Voltage V -4.0 Vdc -80 mAdc Collector Current -- Continuous EBO IC CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RJA PD 1.8 556 300 mW/C C/W mW RJA TJ , Tstg 2.4 417 -55 to +150 mW/C C/W C DEVICE MARKING MMBT3640LT1 = 2J ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CES -12 -- Vdc V CEO(sus) -12 -- Vdc V (BR)CBO -12 -- Vdc V (BR)EBO -4.0 -- Vdc -- -- -- -0.01 -1.0 -10 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -100 Adc, V BE = 0) Collector-Emitter Sustaining Voltage(1 ) (I C = -10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -100 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -100 Adc, I C = 0) Collector Cutoff Current ( V CE = -6.0Vdc, V BE = 0) ( V CE = -6.0Vdc, V BE = 0, T A= 65C) Base Current Current ( V CE = -6.0Vdc, V EB = 0 ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Adc I CES IB nAdc O10-1/3 LESHAN RADIO COMPANY, LTD. MMBT3640LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 30 20 120 -- -- -- -- -0.2 -0.6 -0.25 -0.75 -0.8 -- -0.95 -1.0 -1.5 fT 500 -- MHz C obo -- 3.5 pF C ibo -- 3.5 pF td tr ts tf t on -- -- -- -- 10 30 20 12 ns ns ns ns ns -- -- 25 60 -- -- 35 75 ON CHARACTERISTICS DC Current Gain (I C = -10mAdc, V CE = -0.3 Vdc) (I C = -50mAdc, V CE = -1.0 Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0 mAdc) (I C = -50 mAdc, I B = -5.0 mAdc) (I C = -10 mAdc, I B = -1.0 mAdc, T A=65C ) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -0.5 mAdc) (I C = -10mAdc, I B = -1.0 mAdc) (I C = -50mAdc, I B = -5.0 mAdc) hFE -- VCE(sat) V Vdc Vdc BE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(3),(4) (I C = -10mAdc, V CE= -5.0Vdc, f = 100MHz) Output Capacitance (V CB = -5.0Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = -0.5Vdc, I C = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time (V CC = -6.0 Vdc,V EB(off)=-1.9Vdc, Rise Time I C = -50 mAdc, I B1 = -5.0 mAdc) Storage Time (V CC = -6.0 Vdc, Fall Time I C = -50 mAdc,I B1 = I B2 = -5.0 mAdc) Turn-On Time (V CC = -6.0 Vdc, I C = -50 mAdc, V EB(off)=-1.9Vdc,I B1 = -5.0 mAdc) (V CC = -1.5 Vdc, I C = -10 mAdc, I B1 = -5.0 mAdc) Turn-Off Time (V CC = -6.0 Vdc, I C = -50 mAdc, V EB(off)=-1.9Vdc, I B1 = I B2 = -5.0 mAdc) (V CC = -1.5 Vdc, I C = -10 mAdc, I B1 = I B2 = -0.5 mAdc) t off ns 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. V BB = -6.0 V V BB = +1.9 V 1.0 k 0.1 F 0 V in 110 5.0 k 5.0 V V out 680 TO SAMPLING SCOPE INPUT Z > 100 k RISE TIME < 1.0 ns -6.8 V V CC = 1.5 V V CC= -6.0 V 51 PULSE SOURCE RISE TIME < 1.0 ns PULSE WIDTH >100 ns NOTES: Collector Current = 50 mA, NOTES: Turn-On and Turn-Off Time Z in = 50 OHMS NOTES: Base Currents = 5.0 mA. FALL TIME < 1.0 ns V out 0.1 mF 0 130 V in 5.0 k 51 PULSE SOURCE RISE TIME < 1.0 ns PULSE WIDTH > 200 ns Z in = 50 OHMS FALL TIME < 1.0 ns TO SAMPLING SCOPE INPUT Z >100 k RISE TIME < 1.0 ns NOTES: Collector Current = 10 mA, NOTES: Turn-On and Turn-Off Time NOTES: Base Currents = 0.5 mA. Figure 1. Figure 2. O10-2/3 LESHAN RADIO COMPANY, LTD. MMBT3640LT1 -1.4 200 T J = 25C -1.2 T J = 125C 100 V, VOLTAGE (VOLTS) h FE, DC CURRENT GAIN V CE = -1.0 V 25C 70 50 -55C 30 20 V BE(sat) @ I C /I B = 10 -1.0 -0.8 V BE(on) @ V CE = -1.0 V -0.6 -0.4 V CE(sat) @ I C /I B = 10 -0.2 10 0 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -1.0 -2.0 -5.0 -10 -20 Figure 3. DC Current Gain Figure 4. "On" Voltages I C = -1.0 mA -5.0mA -20 mA -80 mA -0.6 -0.4 -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 V , TEMPERATURE COEFFICIENT (mV/ C) I C , COLLECTOR CURRENT (mA) T J = 25C -0.01-0.02 -0.5 I C , COLLECTOR CURRENT (mA) -1.0 -0.8 -0.1 -0.2 -100 -50 *APPLIES FOR I C /I B <h FE /4 25C to 125C 0 R VC for V CE(sat) -55C to 25C -0.5 -1.0 25C to 125C -1.5 -55C to 25C R VB for V BE -2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 I C , COLLECTOR CURRENT (mA) Figure 5. Collector Saturation Region Figure 6. Temperature Coefficients 2000 -100 +0.5 I B , BASE CURRENT (mA) -100 5.0 T J = 25C T J = 25C V CE = -10 V f = 100 MHz 3.0 1000 -1.0 V 800 C, CAPACITANCE (pF) f T, CURRENT -GAIN -BANDWIDTH PRODUCT(MHz) V CE, COLLECTOR- EMITTER VOLTAGE (VOLTS) -0.1 -0.2 600 400 200 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 2.0 C obo C ibo 1.0 0.7 0.5 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 7. Current-Gain -- Bandwidth Product Figure 8. Capacitance -20 O10-3/3