LESHAN RADIO COMPANY, LTD.
O10–1/3
1
3
2
MMBT3640LT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Switching Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO –12 Vdc
Collector–Base V oltage V CBO –12 Vdc
Emitter–Base V oltage V EBO –4.0 Vdc
Collector Current — Continuous I C–80 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT3640LT1 = 2J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CES –12 –– Vdc
(I C = –100 µAdc, V BE = 0)
Collector–Emitter Sustaining V oltage(1 )
(I C = –10 mAdc, I B = 0) V CEO(sus) –12 — Vdc
Collector–Base Breakdown V oltage V (BR)CBO –12 –– Vdc
(I C = –100 µAdc, I E = 0)
Emitter–Base Breakdown V oltage V (BR)EBO –4.0 — Vdc
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current I CES µAdc
( V CE = –6.0Vdc, V BE = 0) — –0.01
( V CE = –6.0Vdc, V BE = 0, T A= 65°C) — –1.0
Base Current Current ( V CE = –6.0Vdc, V EB = 0 ) I B— –10 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
O10–2/3
MMBT3640LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE ––
(I C = –10mAdc, V CE = –0.3 Vdc) 30 12 0
(I C = –50mAdc, V CE = –1.0 Vdc) 20 ––
Collector–Emitter Saturation V oltage VCE(sat) Vdc
(I C = –10mAdc, I B = –1.0 mAdc) –– –0.2
(I C = –50 mAdc, I B = –5.0 mAdc) –– –0.6
(I C = –10 mAdc, I B = –1.0 mAdc, T A=65°C ) –– –0.25
Base–Emitter Saturation Voltage V BE(sat) Vdc
(I C = –10mAdc, I B = –0.5 mAdc) –0.75 –0.95
(I C = –10mAdc, I B = –1.0 mAdc) –0.8 –1.0
(I C = –50mAdc, I B = –5.0 mAdc) –– –1.5
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4) f T500 –– MHz
(I C = –10mAdc, V CE= –5.0Vdc, f = 100MHz)
Output Capacitance
(V CB = –5.0Vdc, I E = 0, f = 1.0 MHz) C obo –– 3.5 pF
Input Capacitance C ibo –– 3.5 pF
(V EB = –0.5Vdc, I C = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay T ime (V CC = –6.0 Vdc,V EB(off)=–1.9Vdc, t d—10ns
Rise T ime I C = –50 mAdc, I B1 = –5.0 mAdc) t r—30ns
Storage T ime (V CC = –6.0 Vdc, t s—20ns
Fall T ime I C = –50 mAdc,I B1 = I B2 = –5.0 mAdc) t f—12ns
T urn–On Time t on ns
(V
CC
= –6.0 Vdc, I
C
= –50 mAdc, V
EB(off)
=–1.9Vdc,I
B1
= –5.0 mAdc)
—
25
(V
CC
= –1.5 Vdc, I
C
= –10 mAdc, I
B1
= –5.0 mAdc)
—
60
T urn–Of f Time t off ns
(V
CC
= –6.0 Vdc, I
C
= –50 mAdc, V
EB(off)
=–1.9Vdc, I
B1
= I
B2
= –5.0 mAdc)
—
35
(V
CC
= –1.5 Vdc, I
C
= –10 mAdc, I
B1
= I
B2
= –0.5 mAdc)
—
75
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
V BB = +1.9 V V CC = –6.0 V
0V in
51
0.1 µF
1.0 k 110
V out
680
NOTES: Collector Current = 50 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA.
V BB = –6.0 V V CC = 1.5 V
0
5.0 V
V in
51
0.1 mF
5.0 k 130
V out
5.0 k
Figure 1.
NOTES: Collector Current = 10 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 0.5 mA.
Figure 2.
–6.8 V
PULSE SOURCE
RISE TIME
<
1.0 ns
PULSE WIDTH
>
100 ns
Z in = 50 OHMS
FALL TIME
<
1.0 ns
TO SAMPLING SCOPE
INPUT Z
>
100 k
RISE TIME
<
1.0 ns PULSE SOURCE
RISE TIME
<
1.0 ns
PULSE WIDTH
>
200 ns
Z in = 50 OHMS
FALL TIME
<
1.0 ns
TO SAMPLING SCOPE
INPUT Z
>
100 k
RISE TIME
<
1.0 ns
LESHAN RADIO COMPANY, LTD.
O10–3/3
MMBT3640LT1
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V, VOLTAGE (VOLTS)
T
J
= 25°C
T
J
= 125°C
I
C
= –1.0 mA
θ V , TEMPERATURE COEFFICIENT (mV/ °C)
*APPLIES FOR I
C
/I
B
<
h
FE
/4
C, CAPACITANCE (pF)
T
J
= 25°C
f = 100 MHz
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
I B , BASE CURRENT (mA)
Figure 5. Collector Saturation Region I C , COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
I C , COLLECTOR CURRENT (mA)
Figure 7. Current–Gain — Bandwidth Product V R , REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
h FE, DC CURRENT GAIN
f
T
, CURRENT –GAIN –BANDWIDTH PRODUCT(MHz) V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
25°C
–55°C
V
CE
= –1.0 V
V
BE(on)
@ V
CE
= –1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
–5.0mA –20 mA –80 mA
T
J
= 25°C
R
θVC
for V
CE(sat)
R
θVB
for V
BE
25°C to 125°C
–55°C to 25°C
25°C to 125°C
–55°C to 25°C
C
obo
C
ibo
T
J
= 25°C
V
CE
= –10 V
–1.0 V
200
100
70
50
30
20
10
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.4
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
0–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10
+0.5
0
–0.5
–1.0
–1.5
–2.0–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
2000
1000
800
600
400
200–1.0 –2.0 –3.0 –5.0 –7.0–10 –20 –30 –50 –70 –100
5.0
3.0
2.0
1.0
0.7
0.5
–0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20
