BT139-600 - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

Passivated triacs in a SOT78 plastic package. intended for use in applications requiring

high bidirectional transient and blocking voltage capability.

1.2 Features

■High thermal cycling performance.

1.3 Applications

1.4 Quick reference data

2. Pinning information

BT139 series

Triacs

Rev. 04.00 — 6 July 2004 Product data sheet

■Motor control ■Industrial and domestic lighting, heating

and static switching.

■VDRM ≤600 V (BT139-600) ■VDRM ≤800 V (BT139-800G)

■VDRM ≤600 V (BT139-600F) ■IT(RMS) ≤16 A

■VDRM ≤800 V (BT139-800) ■ITSM ≤155 A.

■VDRM ≤800 V (BT139-800F)

Table 1: Discrete pinning

Pin Description Simpliﬁed outline Symbol

1 main terminal 1

SOT78 (TO-220AB)

2 main terminal 2

3 gate

mb main terminal 2

sym051

Product data sheet Rev. 04.00 — 6 July 2004 2 of 12

Philips Semiconductors BT139 series

Triacs

3. Ordering information

4. Limiting values

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The

rate of rise of current should not exceed 15 A/µs.

Table 2: Ordering information

Type number Package

Name Description Version

BT139-600 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole;

3-lead TO-220AB SOT78

BT139-600F

BT139-800

BT139-800F

BT139-800G

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage

BT139-600 - 600[1] V

BT139-800 - 800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤99 °C;

Figure 4 and Figure 5 -16 A

ITSM non-repetitive peak on-state

current full sine wave; Tj=25°C

prior to surge; Figure 2 and

Figure 3

t = 20 ms - 155 A

t = 16.7 ms - 170 A

I2tI

2t for fusing t = 10 ms - 120 A2s

dIT/dtrepetitive rate of rise of on-state

current after triggering ITM = 20 A; IG= 0.2 A;

dIG/dt = 0.2 A/µs

T2+ G+ - 50 A/µs

T2+ G−-50 A/µs

T2− G−-50 A/µs

T2− G+ - 10 A/µs

IGM peak gate current - 2 A

VGM peak gate voltage - 5 V

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature −40 +150 °C

Tjjunction temperature - 125 °C

Product data sheet Rev. 04.00 — 6 July 2004 3 of 12

Philips Semiconductors BT139 series

Triacs

α= conduction angle

Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.

IT(RMS) (A)

0 2015105

001aab093

Ptot

(W)

113

101

Tmb(max)

(°C)

125

107

119

α =

180

120

tp≤20 ms.

(1) dIT/dt limit.

(2) T2− G+ quadrant.

Fig 2. Non-repetitive peak on-state current as a function of pulse width; maximum values.

001aab092

T (ms)

10−2102

1010−11

102

103

ITSM

(A)

ITITSM

Tj initial = 25°C max

(2)

(1)

Product data sheet Rev. 04.00 — 6 July 2004 4 of 12

Philips Semiconductors BT139 series

Triacs

5. Thermal characteristics

f = 50 Hz.

Fig 3. Non-repetitive peak on-state current as a function of number of sinusoidal current cycles; maximum

values.

001aab102

120

160

ITSM

(A)

1 103

102

ITITSM

Tj initial = 25°C max

(1) Tmb = 99 °C. f = 50 Hz; Tmb ≤99 °C.

Fig 4. RMS on-state current as a function of mounting

base temperature; maximum values. Fig 5. RMS on-state current as a function of surge

duration; maximum values.

Tmb (°C)

−50 150100050

001aab091

IT(RMS)

(A)

(1)

surge duration (s)

10−210110−1

001aab090

IT(RMS)

(A)

Table 4: Thermal characteristics

Symbol Parameter Conditions Typ Max Unit

Rth(j-mb) thermal resistance junction to

mounting base full cycle Figure 6 - 1.2 K/W

half cycle Figure 6 - 1.7 K/W

Rth(j-a) thermal resistance junction to ambient in free air 60 - K/W

Product data sheet Rev. 04.00 — 6 July 2004 5 of 12

Philips Semiconductors BT139 series

Triacs

6. Static characteristics

(1) Unidirectional.

(2) Bidirectional.

Fig 6. Transient thermal impedance as a function of pulse width.

001aab098

10−1

10−2

Zth(j-mb)

(K/W)

10−3

tp (s)

10−511010−1

10−2

10−410−3

(2)

(1)

Table 5: Static characteristics

=25

C unless otherwise stated.

Symbol Parameter Conditions BT139 BT139-F BT139-G Unit

Min Typ Max Min Typ Max Min Typ Max

IGT gate trigger

current VD=12V;

IT= 0.1 A;

Figure 8

T2+ G+ - 5 35 - 5 25 - 5 50 mA

T2+ G−- 8 35 - 8 25 - 8 50 mA

T2− G−- 1035- 1025- 1050mA

T2− G+ - 22 70 - 22 70 - 22 100 mA

ILlatching current VD=12V;

IGT = 0.1 A;

Figure 9

T2+ G+ - 7 40 - 7 40 - 7 60 mA

T2+ G−- 2060- 2060- 2090mA

T2− G−- 8 40 - 8 40 - 8 60 mA

T2− G+ - 10 60 - 10 60 - 10 90 mA

IHholding current VD=12V;

IGT = 0.1 A;

Figure 10

- 6 45 - 6 45 - 6 60 mA

VTon-state voltage IT=20A;

Figure 11 - 1.2 1.6 - 1.2 1.6 - 1.2 1.6 V

Product data sheet Rev. 04.00 — 6 July 2004 6 of 12

Philips Semiconductors BT139 series

Triacs

7. Dynamic characteristics

VGT gate trigger

voltage VD=12V;

IT= 0.1 A;

Figure 7

- 0.7 1.5 - 0.7 1.5 - 0.7 1.5 V

VD= 400 V;

IT= 0.1 A;

Tj= 125 °C

0.25 0.4 - 0.25 0.4 - 0.25 0.4 - V

IDoff-state

leakage current VD=V

DRM(max);

Tj= 125 °C- 0.1 0.5 - 0.1 0.5 - 0.1 0.5 mA

Table 5: Static characteristics

…continued

=25

C unless otherwise stated.

Symbol Parameter Conditions BT139 BT139-F BT139-G Unit

Min Typ Max Min Typ Max Min Typ Max

Table 6: Dynamic characteristics

Symbol Parameter Conditions BT139 BT139-F BT139-G Unit

Min Typ Max Min Typ Max Min Typ Max

dVD/dt critical rate of

rise of off-state

voltage

VDM =67%

VDRM(max);

Tj= 125 °C;

exponential

waveform; gate

open circuit

200 250 - 50 250 - 200 250 - V/µs

dVcom/dt critical rate of

change of

commutating

voltage

VDM = 400 V;

Tj=95°C;

IT(RMS) =16A;

dIcom/dt = 7.2 A/ms;

gate open circuit

10 20 - - 20 - 10 20 - V/µs

tgt gate controlled

turn-on time ITM =20A;

VD=V

DRM(max);

IG= 0.1 A;

dIG/dt=5A/µs

2--2- 2-µs

Product data sheet Rev. 04.00 — 6 July 2004 7 of 12

Philips Semiconductors BT139 series

Triacs

(1) T2+ G+.

(2) T2− G−.

(3) T2− G−.

(4) T2− G+.

Fig 7. Normalized gate trigger voltage as a function of

junction temperature. Fig 8. Normalized gate trigger current as a function of

junction temperature.

Tj (°C)

−50 150100050

001aab101

0.8

1.2

1.6

0.4

VGT(Tj)

VGT(25°C)

Tj (°C)

−50 150100050

001aab089

IGT(Tj)

IGT(25°C) (1)

(2)

(3)

(4)

Fig 9. Normalized latching current as a function of

junction temperature. Fig 10. Normalized holding current as a function of

junction temperature.

Tj (°C)

−50 150100050

001aab100

IL(Tj)

IL(25°C)

Tj (°C)

−50 150100050

001aab099

IH(Tj)

IH(25°C)

Product data sheet Rev. 04.00 — 6 July 2004 8 of 12

Philips Semiconductors BT139 series

Triacs

VO = 1.06 V.

RS = 0.0304 Ω.

(1) Tj= 125 °C; typical values.

(2) Tj = 25 °C; maximum values.

(3) Tj = 125 °C; maximum values.

Fig 11. On-state current characteristics.

001aab094

VT (V)

0321

(A)

(1) (3)(2)

The triac should commutate when the dIT/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

(1) BT139 SERIES.

(2) BT139...G SERIES.

(3) BT139...F SERIES.

(4) dIcom/dt = 20 A/ms.

Fig 12. Critical rate of change of commutating voltage as a function of junction temperature; minimum values.

001aab103

Tj (°C)

1 15010050

102

103

dV/dt

(V/µs)

16 12 7.29.3 5.6(4)

(1)

(2)

(3)

Product data sheet Rev. 04.00 — 6 July 2004 9 of 12

Philips Semiconductors BT139 series

Triacs

8. Package outline

Fig 13. Package outline.

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-463-lead TO-220AB

123

L1(1)

0 5 10 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

DIMENSIONS (mm are the original dimensions)

Note

1. Terminals in this zone are not tinned.

UNIT A1b1D1ep

mm 2.54

AbD

cL2

max.

3.0 3.8

3.6

15.0

13.5 3.30

2.79 3.0

2.7 2.6

2.2

0.7

0.4 15.8

15.2

0.9

0.6 1.3

1.0

4.5

4.1 1.39

1.27 6.4

5.9 10.3

9.7

L1(1)

01-02-16

03-01-22

mounting

base

Product data sheet Rev. 04.00 — 6 July 2004 10 of 12

Philips Semiconductors BT139 series

Triacs

9. Revision history

Table 7: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

BT139_SERIES_4 20040706 Product data sheet - 9397 750 13358 BT139_SERIES_3

Modiﬁcations: Data sheet updated to latest standards.

BT139_SERIES_3 20030401 Product speciﬁcation - - BT139_SERIES_2

BT139_SERIES_2 20010701 Product speciﬁcation - - BT139_SERIES_1

BT139_SERIES_1 19970901 Product speciﬁcation - - -

Philips Semiconductors BT139 series

Triacs

Product data sheet Rev. 04 — 6 July 2004 11 of 12

10. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights. Date of release: 6 July 2004

Document order number: 9397 750 13358

Published in The Netherlands

Philips Semiconductors BT139 series

Triacs

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Static characteristics . . . . . . . . . . . . . . . . . . . . 3

7 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information . . . . . . . . . . . . . . . . . . . . .11