1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
High-speed switching
General-purpose switching
BAS16 series
High-speed switching diodes
Rev. 6 — 24 September 2014 Product data sheet
Table 1. Product overview
Type number Package Configuration Package
configuration
NXP JEITA JEDEC
BAS16 SOT23 - TO-236AB single small
BAS16H SOD123F - - single s mall and flat lead
BAS16J SOD323F SC-90 - single very small and flat
lead
BAS16L SOD882 - - single leadless ultra
small
BAS16T SOT416 SC-75 - single ultra small
BAS16VV SOT666 - - triple isolated ultra small and flat
lead
BAS16VY SOT363 SC-88 - triple isolated very small
BAS16W SOT323 SC-70 - single very small
BAS316 SOD323 SC-76 - single very small
BAS516 SOD523 SC-79 - single ultra small and flat
lead
High switching speed: trr 4ns Low capacitance
Low leakage current Reverse voltage: VR100 V
Repetitive peak reverse voltage:
VRRM 100 V
Small SMD plastic packages
AEC-Q101 qualified
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Product data sheet Rev. 6 — 24 September 2014 2 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
1.4 Quick reference data
2. Pinning information
[1] The marking bar indicates the cathode.
Table 2. Quick reference data
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRreverse voltage - - 100 V
IRreverse current VR=80V - - 0.5 A
trr reverse recovery
time IF=10mA; I
R=10mA;
RL= 100 ; IR(meas) =1 mA --4ns
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAS16; BAS16T; BAS16W
1 anode
2 not connected
3 cathode
BAS16H; BAS16J; BAS316; BAS516
1 cathode [1]
2 anode
BAS16L
1 cathode [1]
2 anode
BAS16VV; BAS16VY
1 anode (diode 1)
2 anode (diode 2)
3 anode (diode 3)
4 cathode (diode 3)
5 cathode (diode 2)
6 cathode (diode 1)
006aaa144
12
3
006aaa764
3
12
001aab540
12
006aab040
2
1
21
Transparent
top view
006aab040
2
1
001aab555
6 45
1 32
006aab106
13
6
2
54
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Product data sheet Rev. 6 — 24 September 2014 3 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Tabl e 4. Ordering information
Type number Package
Name Description Version
BAS16 TO-236AB plastic surface-mounted package; 3 leads SOT23
BAS16H - plastic surface-mounted package; 2 leads SOD123F
BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F
BAS16L DFN1006-2 leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm SOD882
BAS16T SC-75 plastic surface-mounted package; 3 leads SOT416
BAS16VV - plastic surface-mounted package; 6 leads SOT666
BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363
BAS16W SC-70 plastic surface-mounted package; 3 leads SOT323
BAS316 SC-76 plastic surface-mounted package; 2 leads SOD323
BAS516 SC-79 plastic surface-mounted package; 2 leads SOD523
Table 5. Marking codes
Type number Marking code[1]
BAS16 A6*
BAS16H A1
BAS16J AR
BAS16L S2
BAS16T A6
BAS16VV 53
BAS16VY 16*
BAS16W A6*
BAS316 A6
BAS516 6
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage -100V
VRreverse voltage - 100 V
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Product data sheet Rev. 6 — 24 September 2014 4 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Single diode loaded.
[4] Soldering point of cathode tab.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[6] Soldering points at pins 4, 5 and 6.
IFforward current
BAS16 [1] -215mA
BAS16H
BAS16L [2] -215mA
BAS16T [1] -155mA
BAS16VV
BAS16VY [1][3] -200mA
BAS16W [1] -175mA
BAS16J
BAS316
BAS516
[1] -250mA
IFRM repetitive peak forward
current tp0.5 ms;
0.25 -500mA
IFSM non-repetitive peak forward
current square wave;
Tj(init) = 25 °C
tp=1s-4A
tp=1ms - 1 A
tp=1s - 0.5 A
Ptot total power dissipation
BAS16 Tamb 25 C[1] -250mW
BAS16H Tamb 25 C[2] -380mW
[5] -830mW
BAS16J Tamb 25 C[5] -550mW
BAS16L Tamb 25 C[2] -250mW
BAS16T Tsp 90 C[1][4] -170mW
BAS16VV Tamb 25 C[1][3] -180mW
BAS16VY Tsp 85 C[1][3][6] -250mW
BAS16W Tamb 25 C[1] -200mW
BAS316 Tsp 90 C[1][4] -400mW
BAS516 Tsp 90 C[1][4] -500mW
Per device
Tjjunction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
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Product data sheet Rev. 6 — 24 September 2014 5 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Single diode loaded.
[5] Soldering point of cathode tab.
[6] Soldering points at pins 4, 5 and 6.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BAS16 [1] - - 500 K/W
BAS16H [2] - - 330 K/W
[3] - - 150 K/W
BAS16J [3] - - 230 K/W
BAS16L [2] - - 500 K/W
BAS16VV [2][4] - - 700 K/W
[3][4] - - 410 K/W
BAS16W [1] - - 625 K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt
BAS16 - - 330 K/W
BAS16H [5] --70K/W
BAS16J [5] --55K/W
BAS16T - - 350 K/W
BAS16VY [4][6] - - 260 K/W
BAS16W - - 300 K/W
BAS316 [5] - - 150 K/W
BAS516 [5] - - 120 K/W
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Product data sheet Rev. 6 — 24 September 2014 6 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
7. Characteristics
[1] Pulse test: tp300 s; 0.02.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage [1]
IF= 1 mA - - 715 mV
IF= 10 mA - - 855 mV
IF=50mA --1V
IF=150mA --1.25V
IRreverse current VR=25V --30nA
VR=80V --0.5A
VR=25V; T
j=150C --30A
VR=80V; T
j=150C --50A
Cddiode capacitance f = 1 MHz; VR=0V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
--1.5pF
BAS516 - - 1 pF
trr reverse recovery time IF=10mA; I
R=10mA;
RL= 100 ;
IR(meas) =1 mA
--4ns
VFR forward recovery voltage IF=10mA; t
r=20ns --1.75V
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Product data sheet Rev. 6 — 24 September 2014 7 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
(1) Tamb = 150 C
(2) Tamb =85C
(3) Tamb =25C
(4) Tamb =40 C
Based on square wave currents.
Tj(init) =25C
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Non-repetitive peak forward current as a
function of pul se duration; maximum values
(1) Tamb = 150 C
(2) Tamb =85C
(3) Tamb =25C
(4) Tamb =40 C
f=1MHz; T
amb =25C
Fig 3. Revers e current as a function of reverse
voltage; typical values Fig 4. Dio de capacitance as a function of reverse
voltage; typical values
006aab132
1
10
102
103
IF
(mA)
101
VF (V)
0 1.41.00.4 0.80.2 1.20.6
(1) (2) (3) (4)
mbg704
10
1
102
IFSM
(A)
101
tp (μs)
110
4
103
10 102
006aab133
102
IR
(μA)
VR (V)
0 1008040 6020
10
1
101
102
103
104
105
(1)
(2)
(3)
(4)
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Product data sheet Rev. 6 — 24 September 2014 8 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 10 0 ns; duty cycle =0.05
Oscilloscope: rise time tr=0.35ns
Fig 5. Reverse recovery time test circuit and wav eforms
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp100 ns; duty cycle 0.005
Fig 6. F orward recovery voltage test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50
Ω
IF
D.U.T.
Ri = 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga882
VFR
t
output signal
V
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Product data sheet Rev. 6 — 24 September 2014 9 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
9. Package outline
Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F)
Fig 9. Package outline BAS16J (SOD323F/SC-90) Fig 10. Package outline BAS16L (SOD882/D FN1006-2)
Fig 11. Pac kage outline BAS16T (SOT416/SC-75) Fig 12. Package outline BAS16VV (SOT666)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4 2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
04-09-13Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3 1.8
1.6
0.40
0.25
1.35
1.15
1
2
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side (if applicable)
1.02
0.95
0.30
0.22
0.30
0.22
2
1
04-11-04Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45 0.9
0.7
0.25
0.10
1
0.30
0.15
12
30.45
0.15
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
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Product data sheet Rev. 6 — 24 September 2014 10 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 13. Package outline BAS16VY (SOT363) Fig 14. Package outline BAS16W (SOT323/SC-70)
Fig 15. Package outline BAS316 (SOD323/SC-76) Fig 16. Package outline BAS516 (SOD523/SC-79)
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0 1.35
1.15
1.3
0.4
0.3 0.25
0.10
12
3
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3 1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
02-12-13Dimensions in mm
1.65
1.55 1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
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Product data sheet Rev. 6 — 24 September 2014 11 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
10. Soldering
Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)
Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 12 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Dimensions in mm
Fig 19. Reflow soldering footprint BAS16H (SOD123F)
Fig 20. R eflo w solderin g foo tprin t BAS16J (SOD323F)
1.6
1.6
2.9
4
4.4
1.1 1.22.1
1.1
(2×)
solder lands
solder resist
occupied area
solder paste
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323f_fr
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Product data sheet Rev. 6 — 24 September 2014 13 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 21. Reflow soldering footprint BAS16L (SOD882/DFN1006-2)
Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3×)
0.6
(3×)
1
1.3
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 14 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 23. Reflow soldering footprint BAS16VV (SOT666)
Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)
solder lands
placement area
occupied area
solder paste
sot666_fr
2.75
2.45
2.1
1.6
0.4
(6×)
0.55
(2×)
0.25
(2×)
0.6
(2×)
0.65
(2×)
0.3
(2×)
0.325
(4×)
0.45
(4×)
0.5
(4×)
0.375
(4×)
1.72
1.7
1.0750.538
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 15 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)
Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 16 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)
Fig 28. R eflo w solderin g foo tprin t BAS316 (SOD323/SC-76)
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 17 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)
Fig 30. R eflo w solderin g foo tprin t BAS516 (SOD523/SC-79)
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.4
0.4
(2×)
0.5
(2×)
1.2
solder lands
solder resist
occupied area
solder paste
sod523_fr
Dimensions in mm