2N5730 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)45# Maximum Operating Temp (oC)200o I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)5.0 @I(B) (A) (Test Condition)500m h(FE) Min. Current gain.30 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)2.0 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq30M @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)5.0 t(d) Max. (s) Delay time. t(r) Max. (s) Rise time200n t(on) Max. (s) On time.