GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
MAGX-000035-015000
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
1
MAGX-000035-01500S
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
Part Number Description
MAGX-000035-015000 Flanged, Bulk Packaging
MAGX-L20035-015000 Sample Board
(1.2 - 1.4 GHz, Flanged)
MAGX-000035-01500S Flangeless, Bulk Packaging
MAGX-L20035-01500S Sample Board
(1.2 - 1.4 GHz, Flangeless)
Ordering Information
MAGX-000035-015000 (Flanged)
Features
 GaN on SiC Depletion Mode Transistor
 Common-Source Configuration
 Broadband Class AB Operation
 Thermally Enhanced Package (Flanged: Cu/W,
Flangeless: Cu)
 RoHS* Compliant
 +50V Typical Operation
 MTTF = 600 years (TJ < 200°C)
Primary Applications
 Commercial Wireless Infrastructure
(WCDMA, LTE, WiMAX)
 Air Traffic Control Radar - Commercial
 Weather Radar - Commercial
 Military Radar - Military
 Public Radio
 Industrial, Scientific and Medical
 SATCOM
 Instrumentation
Description
The MAGX-000035-01500X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01500X is constructed using a
thermally enhanced flanged (Cu/W) or flangeless
(Cu) ceramic package which provides excellent
thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme
mismatched load conditions unparalleled with older
semiconductor technologies.
MAGX-000035-01500S (Flangeless)
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
MAGX-000035-015000
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
2
MAGX-000035-01500S
Electrical Specifications1: Freq. = 1.2 - 1.4 GHz, TA = 25°C
Parameter Test Conditions Symbol Min. Typ. Max. Units
RF Functional Tests: V
DD
= 50 V, I
DQ
= 15 mA, 1 ms Pulse, 10% Duty
Output Power PIN= 0.5 W POUT 15.0 17.7 - W
Power Gain PIN= 0.5 W GP 14.8 15.5 - dB
Drain Efficiency PIN= 0.5 W ηD 55 63 - %
Load Mismatch Stability PIN= 0.5 W VSWR-S - 5:1 - -
Load Mismatch Tolerance PIN= 0.5 W VSWR-T - 10:1 - -
Droop PIN= 0.5 W Droop - 0.1 0.4 dB
1. Electrical Specifications measured in MACOM RF evaluation board.
Parameter Test Conditions Symbol Min. Typ. Max. Units
DC Characteristics
Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 750 µA
Gate Threshold Voltage VDS = 5 V, ID = 2 mA VGS (TH) -5 -3 -2 V
Forward Transconductance VDS = 5 V, ID = 500 mA GM 0.35 - - S
Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 4.4 - pF
Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 1.9 - pF
Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.2 - pF
Dynamic Characteristics
Electrical Characteristics: TA = 25°C
Correct Device Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (+50V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
MAGX-000035-015000
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
3
MAGX-000035-01500S
Absolute Maximum Ratings2,3,4
2. Operation of this device above any one of these parameters may cause permanent damage.
3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
4. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V.
5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN))
Typical transient thermal resistances:
1 ms pulse, 10% duty cycle, ӨJC = 5.0°C/W
For TC = 85°C,
TJ = 132°C @ 50 V, 520 mA-pk, POUT = 17.0 W, PIN = 0.5 W
Parameter Absolute Max.
Input Power PIN (nominal) + 3 dB
Drain Supply Voltage, VDD +65 V
Gate Supply Voltage, VGG -8 V to 0 V
Supply Current, IDD 800 mA
Power Dissipation (PAVG), Pulsed @ 85°C 10.3 W
Junction Temperature5 200°C
Operating Temperature -40°C to +95°C
Storage Temperature -65°C to +150°C
Mounting Temperature See solder reflow profile
ESD Min. - Charged Device Model (CDM) 150 V
ESD Min. - Human Body Model (HBM) 500 V
MTTF (TJ<200°C) 600 years
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
MAGX-000035-015000
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
4
MAGX-000035-01500S
Test Fixture Assembly (1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, VDD = 50 V, Idq = 15 mA)
Contact factory for Gerber file or additional circuit information.
Test Fixture Impedances
F (GHz) ZIF (Ω) ZOF (Ω)
1.2 1.4 + j3.5 2.5 + j3.5
1.3 1.3 + j3.8 2.7 + j3.9
1.4 1.8 + j4.0 3.1 + j4.2
Parts List
Reference Designator Part Vendor
C4 0402, 5.1 pF, ±0.1 pF ATC
C15 0603, 6.8 pF, ±0.1 pF ATC
C2 0603, 82 pF, ±10% ATC
C16 0603, 100 pF, ±10% ATC
C1, C10 0402, 1000 pF, 100 V, 5% ATC
C8 0603, 30 pF, ±10% ATC
C13 0805, 1 µF, 100 V, ±20% ATC
C14 0402, 12 pF, ±10% ATC
C17 100 µF, 160 V, Electrolytic Capacitor Panasonic
C3, C6, C7, C9, C11, C12, R2 Do Not Populate -
R3 240 Ω, 0603, 5% Panasonic
L1, R1 1.0 Ω, 0402, 5% Panasonic
R4 1.0 Ω, 1206, 5% Panasonic
R5 10 Ω, 0402, 5% Panasonic
L3, L6 0402, 3.9 nH, 2% Coilcraft
L2, R6 0402, 0.0 Ω Resistor Panasonic
J1, J2 SMA Connector Tyco Electronics
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
MAGX-000035-015000
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
5
MAGX-000035-01500S
Typical Performance Curves
Application Section
1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, VDD = 50 V, Idq = 15 mA, TA = 25°C
Output Power and Gain Vs. Input Power
Drain Efficiency Vs. Output Power
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
MAGX-000035-015000
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
6
MAGX-000035-01500S
Outline Drawing MAGX-000035-015000 (Flanged)
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
MAGX-000035-015000
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
7
MAGX-000035-01500S
Outline Drawing MAGX-000035-01500S (Flangeless)
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
MACOM:
MAGX-000035-015000S MAGX-L20035-015000S MAGX-000035-015000 MAGX-L20035-015000 MAGX-L20035-
01500S MAGX-000035-01500S