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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
PM600DV1A060
FEATURE
a) Adopting new 5th generation Full-Gate
CSTBTTM chip
b) The over-temperature protection which
detects the chip surface temperature of
CSTBTTM is adopted.
c) Error output signal is possible from all
each protection upper and lower arm of IPM.
d) Compatible V-series package.
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
INTERNAL FUNCTIONS BLOCK DIAGRAM
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions Ratings Unit
VCES Collector-Emitter Voltage VD=15V, VCIN=15V 600 V
IC T
C=25°C 600
ICRM Collector Current Pulse 1200
A
Ptot Total Power Dissipation TC=25°C 1712 W
IE Emitter Current TC=25°C 600
IERM (Free wheeling Diode Forward current) Pulse 1200
A
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage Applied between : VP1-VPC, VN1-VNC 20 V
VCIN Input Voltage Applied between : CPI-VPC, CNI-VNC 20 V
VFO Fault Output Supply Voltage Applied between : FPO-VPC, FNO-VNC 20 V
IFO Fault Output Current Sink current at FPO, FNO terminals 20 mA
IGBT FWDi
OUT
SINK
SC
GND
TjA
TjK
AMP
VCC
IN
Fo
OUT
SINK
SC
GND
TjA
TjK
AMP
VCC
IN
Fo
E2
C2E1
C1
V
P1
V
PC
C
PI
F
PO
NC
IGBT FWDi
V
N1
V
NC
C
NI
F
NO
NC
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
VCC(PROT) Supply Voltage Protected by
SC
VD =13.5V ~ 16.5V
Inverter Part, Tj =+125°C Start 400 V
VCC(surge) Supply Voltage (Surge) Applied between : C1-E2, Surge value 500 V
TC Module case operating
temperature
-20 ~ +100 °C
Tstg Storage Temperature -40 ~ +125 °C
Visol Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1min. 2500 Vrms
*: TC measurement point is just under the chip.
THERMAL RESISTANCE
Limits
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Junction to case, IGBT (per 1 element) (Note.1) - - 0.073
Rth(j-c)D
Thermal Resistance
Junction to case, FWDi (per 1 element) (Note.1) - - 0.109
Rth(c-s) Contact Thermal Resistance
Case to heat sink, (per 1 module)
Thermal grease applied (Note.1) - 0.018 -
K/W
Note1: If you use this value, Rth(s-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Symbol Parameter Conditions
Min. Typ. Max. Unit
Tj=25°C - 1.90 2.35
VCEsat Collector-Emitter Saturation
Voltage
VD=15V, IC=600A
VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 1.90 2.35
V
VEC Emitter-Collector Voltage IE=600A, VD=15V, VCIN= 15V (Fig. 2) - 1.7 2.8
V
ton 0.3 0.8 2.0
trr - 0.4 0.8
tc(on) - 0.4 1.0
toff - 1.0 2.3
tc(off)
Switching Time
VD=15V, VCIN=0V←→15V
VCC=300V, IC=600A
Tj=125°C
Inductive Load (Fig. 3,4)
- 0.3 1.0
μs
Tj=25°C - - 1
ICES Collector-Emitter Cut-off
Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10
mA
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
CONTROL PART
Limits
Symbol Parameter Conditions
Min. Typ. Max. Unit
VP1-VPC - 2 4
ID Circuit Current VD=15V, VCIN=15V VN1-VNC - 2 4
mA
Vth(ON) Input ON Threshold Voltage 1.2 1.5 1.8
Vth(OFF) Input OFF Threshold Voltage
Applied between :
CPI-VPC, CNI-VNC
1.7 2.0 2.3 V
SC Short Circuit Trip Level -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 900 - - A
toff(SC) Short Circuit Current Delay
Time VD=15V (Fig. 3, 6) - 0.2 - μs
OT Trip level 135 - -
OT(hys) Over Temperature Protection Detect Temperature of IGBT chip Hysteresis - 20 -
°C
UVt Trip level 11.5 12.0 12.5
UVr
Supply Circuit Under-Voltage
Protection -20≤Tj≤125°C Reset level - 12.5 - V
IFO(H) - - 0.01
IFO(L) Fault Output Current VD=15V, VFO=15V (Note.2) - 10 15
mA
tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Symbol Parameter Conditions
Min. Typ. Max. Unit
Mt Mounting part screw : M6 3.92 4.90 5.88
Ms Mounting Torque Main terminal part screw : M6 3.92 4.90 5.88 N・m
m Weight - - 510 - g
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter Conditions Recommended value Unit
VCC Supply Voltage Applied across C1-E2 terminals ≤ 400 V
VD Control Supply Voltage Applied between :
VP1-VPC, VN1-VNC
(Note.3) 15.0±1.5 V
VCIN(ON) Input ON Voltage ≤ 0.8
VCIN(OFF) Input OFF Voltage
Applied between :
CPI-VPC, CNI-VNC
≥ 4.0 V
fPWM PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
tdead Arm Shoot-through Blocking
Time
For IPM’s each input signals (Fig. 7) ≥ 3.0 μs
Note3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their
corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be
allowed to rise above VCES rating of the device.
( These test should not be done by using a curve tracer or its equivalent. )
Fig. 1 VCEsat Te st
Fig. 2 VEC Test
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
Fig. 5 ICES Test
Fig. 6 SC test waveform
Fig. 7 Dead time measurement point example
E1C2
C1
VD1
E2
Ic
Vcc
VD2
VP1
VPC
CPI
FPO
NC
VN1
VNC
CNI
FNO
NC
E1C2
C1
VD1
E2
Ic
Vcc
VD2
VP1
VPC
CPI
FPO
NC
VN1
VNC
CNI
FNO
NC
V*1
V*C
C*I
E1(E2)
C1(C2)
F*O
VD
NC
A
pulse
V*1
V*C
C*I
E1(E2)
C1(C2)
Ic
F*O V
VD
NC
V*1
V*C
C*I
E1(E2)
C1(C2)
-Ic
F*O V
VD
NC
VCE
IE
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and
E2 terminal.
Vcc
IN
GND
OUT
OT
VP1
FPO
VPC
SC
C1
E1C2 (U)
Vcc
IN
GND
OUT
OT
SC
E2
+
-
IF
VD1
20k
Fo
CPI
FNO
VN1
VNC
CNI
Fo
IF
VD2
20k
Vcc
IN
GND
OUT
OT
VP1
FPO
VPC
SC
C1
E1C2 (V)
Vcc
IN
OUT
OT
SC
GND E2
IF
VD3
20k
Fo
CPI
FNO
VN1
VNC
CNI
Fo
IF
VD4
20k
Vcc
Vcc
IN
GND
OUT
OT
VP1
FPO
VPC
SC
C1
E1C2 (W)
Vcc
IN
GND
OUT
OT
SC
E2
IF
VD5
20k
Fo
CPI
FNO
VN1
VNC
CNI
Fo
IF
VD6
20k
M
≥10µ
≥0.1µ
≥10µ
≥0.1µ
≥10µ
≥0.1µ
≥10µ
≥0.1µ
≥10µ
≥0.1µ
≥10µ
≥0.1µ
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
0
100
200
300
400
500
600
0.51.01.52.02.5
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
0
0.5
1
1.5
2
2.5
0 100 200 300 400 500 600
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTO R-EMITTER
SATURATION VOLTAGE VCEsat (V)
1.0
1.5
2.0
2.5
12 13 14 15 16 17 18
EMITTER CURRENT IE (A
)
0
100
200
300
400
500
600
0 0.5 1 1.5 2
CONTROL VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V)
Tj=25°C
Ic=600A
Tj=25°C
T
j
=125°C
VD=15V
Tj=25°C
T
j
=125°C
VD=17V
VD=15V
VD=13V
VD=15V
Tj=25°C
Tj=125°C
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
SWITCHING TIME (ton, toff) CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (t
c(on)
, t
c(off)
) CHARACTERISTICS
(TYPICAL)
SWITCHING TIME ton, toff (μs)
0.1
1
10
10 100 1000
SWITCHING TIME tc(on), tc(off) (μs)
0.01
0.1
1
10 100 1000
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY Eon, Eoff (mJ/pulse)
0
5
10
15
20
25
30
35
0 200 400 600 800
REVERSE RECOVERY TIME trr (μs)
0
0.1
0.2
0.3
0.4
0.5
0.6
0 200 400 600 800
0
50
100
150
200
250
300
REVERSE RECOVERY CURRENT Irr (A)
COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
toff
ton Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
Eoff
Eon
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
Irr
trr
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
tc(on)
tc(off)
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
FREE WHEELING DIODE
REVERSE RECOVERY ENERGY CHARACTERISTICS
(TYPICAL)
ID VS. fc CHARACTERISTICS
(TYPICAL)
REVESE RECOVERY ENERGY Err (mJ/pulse)
0
2
4
6
8
10
12
14
16
0 200 400 600 800
ID (mA)
0
10
20
30
40
50
60
70
0 5 10 15 20 25
EMITTER CURRENT IE (A) fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
UVt / UVr (V)
0
2
4
6
8
10
12
14
16
18
20
-50 0 50 100 150
SC
(SC of Tj=25°C is normalized 1)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 0 50 100 150
Tj (°C) Tj (°C)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
VD=15V
Tj=25°C
Tj=125°C
UVt
UVr VD=15V
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2010
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
TIME t (sec)
Single Pulse
IGBT Part;
Per unit base: Rth(j-c)Q=0.073 KW
FWDi Part;
Per unit base: Rth(j-c)D=0.109 K/W
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