BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
■STMicroelectronics PREFERRED
SALESTYPES
DESCRIP TION
The BD909 and BD911 a re silicon Epitaxial-Base
NPN power t ransistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching a pplications.
The complementary PNP types are BD910 and
BD912 respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD909 BD911
PNP BD910 BD912
VCBO Collector-Base Vo ltage (IE = 0) 80 100 V
VCEO Collector-Emitter Voltage (IB = 0) 80 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
IE,ICCollector Current 15 A
IBBase Current 5 A
Ptot Total Dissipation at Tc ≤ 25 oC90 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types v oltage and current values are negative.
123
TO-220
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.4 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless other wise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) for BD909/910 VCB = 80 V
for BD911/912 VCB = 100 V
Tcase = 150 oC
for BD909/910 VCB = 80 V
for BD911/912 VCB = 100 V
500
500
5
5
µA
µA
mA
mA
ICEO Collector Cut-off
Current (IB = 0) for BD909/910 VCE = 40 V
for BD911/912 VCE = 50 V 1
1mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA fo r BD909/910
for BD911/912 80
100 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5 A IB = 0.5 A
IC = 10 A IB = 2.5 A 1
3V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 10 A IB = 2.5 A 2.5 V
VBE∗Base-Emitter Voltage IC = 5 A VCE = 4 V 1.5 V
hFE∗DC Current Gain IC = 0.5 A VCE = 4 V
IC = 5 A VCE = 4 V
IC = 10 A VCE = 4 V
40
15
5
250
150
fTTransition frequency IC = 0.5 A VCE = 4 V 3 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area Derating Curves
BD909 / BD910 / BD911 / BD912
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DC Current Gain (NPN type)
DC Transconductance (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
DC Transconductance (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
BD909 / BD910 / BD911 / BD912
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Base-Em itter Saturation Voltage (NPN type)
Transition Frequency (NPN type)
Base-Em itter Saturation Voltage (PNP type)
Transition Frequency (PNP type)
BD909 / BD910 / BD911 / BD912
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
BD909 / BD910 / BD911 / BD912
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BD909 / BD910 / BD911 / BD912
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