FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a 170 RK E (T, = 25C) wR wy te (Te = 25C) rm ee i be Vi i P T; | Jcpo te Kite | TH Mla es ve pred ox rp A| hye hie hee | hoe | fab | Cos | Ye" _ AE (vy | cv) [cm | mie] 0) | cam ves) veatwyflccma Yen], tov (a) civ) (ug) | Me) | ory [ay | _ 28C2472| | RF.LN Si.E| 30 3 50 | 300 | 125 | o5 | 24 | >20 | 10 5 10 | 5 | eRe Ae 5B ne) | 200] 0.85 | Sots [138 4 2473) 4 | RF | 30 | 3 | so { 300} 125 | os | 24 | >20} 10 | 5 | 10 | 5 | GeerisdB, Are sap | oao0"| Cre | Sots Jasec #27410 | SW | 6 | 6 | 200 | 600 | 150 | o1 | 30 | 150 | 1 | 10 ile adons 7 <7 80S 138D 7) on |g | 60 | 5 { 600 | 600 | 150 | 0.01| 80 | 200 | 10 | 150 ne preg (1! < PB EnS 138D 2476! ' 8 30 200 | 600 | 150 J} 0.05) 20 | 150 | 1 2 ton 70S, fof < 25005 138D #2477) oy | y " 60 | 6 | 600 | goo | 150 | o1 | 35 | 150 | 1 | 150 en SSBRS 017 < 3000S 138D 4 2478 2479 2480/48 | RF.Ose.Mix| SiEP| 30 3 50 | 100 | 125 >25 | 10 2 1o | 2 | C5 208R 1200"| Je 176 m 248i] | PA SiE} 1530 | 6 | 1.5A|,20W.) 150 f 1 | 150 ]eo~320} 5 | 200 | 5 | 200 >20"| 13 | 20 | 342 38302, 2482| 0 | AF.RF Sit} 300 | 7 | 100 | 900 } 150 | 1 | 240 f30~250] 10 | 20 | 10 | 20 >s0*) 3 241 2483} | PA SiE} 160 | 6 | 1.54 | 25%.) 175 | 1 | 150 |100~s20] 5 | 200 | 5 | 200 120| <20 | 20 | 178 | #2484) 8S KF) oo site} 30 | 5 | 5A lareee| 150 | 50 | go | 90 | 5 | 1a] 5 | -s00 20 "| 100 | 10 }152 " 2485) on " " 100 5 6A (Ow, 150 50 100 90 5 1A 5 | 500 20 140 10/152 2486) Fon fico | 5 | 7a | POM} 150 | 50 | 120 | 9 | 5 | 1A | 58 | S00 20 *| 190 | 10 52) 2487| on 4 Si.EMe] 150 5 6A | BOW} 150 40~280| 5 1A | 10 | 500 50 * 102 [3841083 2488) 1 y {150 | 5 | 8A [200W | 150 40~280; 5 | 1A | 10 | 500 50 * 102 [2541068 # 24g9] on |e [150 | 5 | 190A | 220W | 150 o~20| 5 | 1A | 10 | 500 50] 102 |754195 2490) Asi | SiEP| 55 | 3.5 | 10A [90M] 175 |1.6maj 20 | 50 | 5 | 6A Caren, Uceae pnzew) 48 168 29tley7:| pasw |sizme} 100 | 15 | 6a |e2%o) 150 | 100 | 100 | eo | 4 | 14 | 12 | 500 30"; 200 | 15 | 298 2492] 1 | PA Si.EP| 120 | 5 | 10a |100.) 150 | 100 | 120 | 60 | 4 | 3A] 12 | 500 70 *| 100 | 60 | 102 pagslov | on 1so | s | 10a |1O0W 1 150 | oo | iso | go | 4 | 3A | 12 | s00 7o *| 100 | 60 | 102 2494) HEY Si.E | 25 2 | 750 [8-751 200 | 100 | 20 | 60 7 | 100 Fe dite, Veu=7.2V.P.=125mW) ore 326 " 2495) 25 2 | 1.54 |4?-5%) 200 | 100 | 20 | 60 7 | 200 Ges0Mtle, Veo=7.2V,P-=900mW) os 326 _ 2496 " 24071KX 8 | RF Si.EP | 70 5 | 2A j1.2w| 150 | 10 | 20 | 120 | 5 | 1A] 5 | -s00 150") 38 | 10 [222 1 2498 2499 * 2500) 3) SW.PA SiE} 30 | 6 | 2A | 900 | 150 | 0.2 | 30 |iso~coo] 1 | 500 | 1 | 500 150 *| 27 241 2501) #rtisc | SW si.T | 500 7 3a | 40M] 150 | 100 | 500 | 20 2 |1.5A] 10 | 300 | mSbeS vs07Hs 20 * 268 |T3V40F