DESCRIPTION 28C1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES @ High power gain: Gpe 2 10.7dB @Vec = 13.5V, Pg = 3.5W, f = 175MHz @ TO-39 metal seeled package for high reliability. e@ Emitter electrode is connected electrically to the case. APPLICATION 1 to 3 watt power amplifiers in VHF band mobile radio applica- tions. MITSUBISHI RF POWER TRANSISTOR 28C1947 NPN EPITAXIAL PLANAR TYPE OUTLINE DRAWING Dimensions in mm 9.39 _ 6.60 19MIN 0.712 PIN: $5.08 ( EMITTER (CASE} @ BASE @ COLLECTOR T-8E ABSOLUTE MAXIMUM RATINGS (To =25C unless otherwise specified) Symbol Parameter Conditions Ratings Unit VoBo Coltector to base voltage 35 Vv VEBO Emitter to base voltage 4 Vv VecEo Cotliector to emitter voltage Ree=o 17 v lo Collector current 1 A wo Ta=25C 1 Ww Po Collector dissipation To =25C 10 Ww Tj Junction temperature V75 c Tstg Storage temperature 65 to 175 Cc Rth-a Junction to ambient 150 C/W Thermal resistance Rth-c Junction to case 15 C/W Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (10 =25'C unless otherwise specified) Limits Symbol Parameter Test conditions Unit Min Typ Max ViprRyeEBO! Emitter to base breakdown voltage te=SmA, lc=0 4 VigR)cBo| Collector to base breakdown voitage Ic=10mA, le=0 35 Viar)ceo| Collector to emitter breakdown voltage \c=50mA, Rag=o 17 Vv 'oBpo Collector cutoff current Vog=25V. le =0 500 nh JEBo Emitter cutoff current Veg=3V. Ic=0 500 HA hre DC forward current gain * Vee =10V. Ic=0,1A 10 50 180 _ Po Output power * * 5 4 Ww Veo =13.5V. Pin =0.3W, f=175MHz Io Collector efficiency 50 60 % Note, * Pulse test, Pw=150us. duty=5%. *& Incase of the case grounded. Above parameters, ratings, limits and conditions are subject to change NOV. 97 q MITSUBISHI ELECTRIC TEST CIRCUIT Notes: f=175MHz 100,17 ,3P TR Zin=50Q to 25pF to 30pF C: 100pF,4700pF, 0.01uF, 10uF in parallet All coil are made from 1.5mm@ silver plated copper wire Coil dimensions in milli-meter D: Inner diameter of coil T: Turn number of coil P: Pitch of coil TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION Pe (W) OC CURRENT GAIN her COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE WITH S$ = 50cm?, t= 2mm AR HEAT SINK Pr S > WITHOUT HEAT SINK 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta (C) DC CURRENT GAIN VS. COLLECTOR CURRENT 100 c= 25C 30 ce =10V 80 70 60 50 40 30 20 10 50 70 100 oO 20 30 300 5007001000 COLLECTOR CURRENT Ic (mA) 100,2T,1P to 50pF COLLECTOR TO EMITTER BREAKDOWN 3 TL F O +Vce COLLECTOR CURRENT Ie {A} MITSUBISHI RF POWER TRANSISTOR 2S8C1947 NPN EPITAXIAL PLANAR TYPE Zout=50 2 to 30pF COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE G To = 25C 14 0.8 0.6 0.4 0.2 0 0 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE Vce (V) COLLECTOR TO EMITTER BREAKDOWN Viericer (V) VOLTAGE VOLTAGE VS. BASE TO EMITTER RESISTANCE 100 90 80 70 c= 25C o=50mA 60 50 40 30 20 10 20 30 50 70100 0 10 200 300 500700 1k BASE TO EMITTER RESISTANCE Ree (Q) NOV. ' 97 MITSUBISHI ELECTRIC MITSUBISHI RF POWER TRANSISTOR 2S8C1947 NPN EPITAXIAL PLANAR TYPE COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 To =25C OUTPUT POWER, COLLECTOR EFFICIENCY VS. INPUT POWER 6 100 ELECTRIC a 3 2 70 Te = 25C 0 f=IMiz f=175MHz 3 rs) _ SL Vog =13.5V so Z 30 = 5 20 2 > < a 4 60 2 S10 = 9 bo e i rz 5 3 40 > 5 & o o 5 5 x 3 oO wm 9 2 20 4 Oo 2 5 uw rs) 3 1 1 0 9 1 2-3. 5 7 10 20 30 50 70100 0 0.1 02 O38 0. 40.5 COLLECTOR TO BASE VOLTAGE Veg (V) INPUT POWER Pin (W) OUTPUT POWER VS. COLLECTOR SUPPLY VOLTAGE Te =25C t=175MHz Voc =13.5V > ADJUSTMENT = a fang Lu = oO a. kb 2 a. EF 3 8 10 12 14 16 18 COLLECTOR SUPPLY VOLTAGE Veg (V) NOV. 97