POWER SEMICONDUCTORS INC LAE D MM 7292490 0000364 1 mE POS T.Ol-O)} T-2S-0| D PACK "as mm)" | POWER PACK THYRISTORS (28mm.)}| MEGA PACK THYRISTORS (33mm.) . . D D E,F)E,F] ,F | &,F)16,F |6,F] 6G G G G G G Maximum Ratings Symbol] Units | 220 | 510 | 180] 220 | 300 | 400 | 500 | 600 | 300 | 400 | S00 650 | 850 | 950 RMS Forward Current 't(RMS) A 330 | 510 | 330 | 370} 450) 550 | 600 | 650 | 490 600 | 690 | 785 | 850 | 950 Ave. Forward Current ITiAV) A 210 | 324 | 210 | 235 | 290 | 350 | 380 | 420 | 310 380 | 440 | 500 | 545 | 600 Peak One-Cycle Surge @ 8.3 ms !tom kA 4.0; 6.0] 35] 3.5 | 45 | 50/1 60165]/ 50! 601] 6 5 | 7.5 8.0 | 9.5 17 t@ 8.3 ms 7 Al see. 65 | 1680} 51 51 85 / 100 | 150 | 176 | 100 | 150 | 175 | 234 | 270 | 375 @ Forward Voltage Drop Vim 2.00}1.20 | 3.00] 2.60] 2.00 | 1.50] 1.35 | 1.20 | 2.60 2.00 | 1,70 1.50 1.35 | 1,20 Max. Operating Temperature Tj 125 | 125 | 125) 125] 125 | 126 | 125 | 125 | 125 | 125 125 | 125 125 | 425 @) Max. Voltage Rating VBRM V__|1500]1500| 3000 | 2600 | 2000 | 1800 }1800 | 1200/3000 |2600 | 2000 | 1800 | 2000 | 1800 @ 3 DC Bridge, air cooled hoc) A 310 | 360 | 470 | 570 | 600 | 680 | 440! 530] 620! 700 760 | 830 @ 3M Double Wye (I.P.T.), H,0 cooled lipe) A 1140 | 1300 | 1600 | 1960 | 2140| 2360! 1600] 1940 2240 2580} 2820 | 3100 @ 1 or 38 AC Switch, air cooled iRMs) A 230 | 270 | 350 | 420 | 450 | 500 | 350] 430] 500 570 | 620 | 680 Characteristics and Ratings @ *Max. Rate-of-Rise On-State Cur. di/dt A/lws 200 200 400 Peak Rev, and Fwd. Blocking Current {RAM mA 20 20 35 (@ Storage Temperature Range Tstq, c 1 ae we 38 Max. Holding Current 1H mA 200 200 200 Max. Latching Current It A 1.0 1.0 1,0 * Min. Critical Rate-of-Rise of Off-State Volt. | dv/dt Vi us 200 (400 TYPICAL) 200 Max. Delay Time td Ais 2 2 2 @ Turn-Off Time (typical) tq as 200 200 200 Reverse Recovery Time (typical) ter ps 12 12 16 Peak Rev. Recovery Current (typical) A 6 6 8 Max. Ave. Gate Power Dissipation Poiav) | W 5 5 5 Max. Peak Gate Power Dissipation Pom Ww 20 20 20 Max. Peak Positive Gate Current Gm A 4 4 4 Max. Negative Gate Voltage Vom Vv 5 5 5 @ Max. Gate Voltage to Trigger Vot Vv 3.0 3.0 3.0 Max. Gate Current to Trigger IcT mA 225 150 150 Min. Gate Pulse Width to Trigger As 10 10 10 Max. Gate Voltage Not to Trigger V6o Vv 15 .15 15 Max. Gate Current Not to Trigger Go mA 10 5 5 Mounting Force F kg/Ibs; 400/800 500/1100 1000/2200 Max. Thermal Resistance J-C (DC) R- C/W .08 .09 .06 Max. Thermal Resistance C-Sink (Single) Ro. "c/w 03 02 012 Weight (typical), 1 kg = 2.2 Ibs. w kg .0568 .090/.140 .200 (1) Vr14 @ 2500A Peak for Z and ZD medium or lower ambient conditions. PLEASE NOTE: The above summary is only a convenient introductio Special dv/dt to 1000 V/ psec Please contact the factory or your nearest PS{ representatives for Paralleling characteristics types; Vt14 @ 500 A Peak for D, E, F, andG types; (2) DC output Current using a type 62RLB assembly, ambient temperature = (3) OC output Current using a type 62HSW assembly, (4) AC RMS tine Current using a type 22RLA assembl y, ambient temperature = Higher output ratings are available using larger heatsinks, 50C, air flow = 1000 LFM (Smi/sec.} water temperature = 25C, water flow = 1.0 GPM (.06 Itr/sec.) 50C, air flow = 1000 LEM (5misec,} higher cooling flow rates, one in series with the cooling n to the PS! thyristor family, Mu * Reverse recovery characteristics more details. Vim @ 5000 A Peak for J, JD } Except Z, ZD Types are ina 11 XM Type air cooled heatsink and J, JD Types are in special heatsinks. ch more detail is available from the factory on: Waiding characteristicsPOWER SEMICONDUCTORS INC 32E > mm 7252490 oOO03E5 3 mupos [701 -O! T-25-0! ASTRO PACK THYRISTORS (52mm.) SPECIAL THYRISTORS DIODE TYPES z|z Zz z z z z Zz J J J J FD| FO| GD/ GD] zD |] zp |] zd |] zD | Jb | JD T Jb a 800 | 1000 | 1200 | 1400 {1600 1800 | 2000 | 2300 | 1800 | 2200| 2600! 3000 | 600| 900] 800] 1400/1500 | 2100 | 2500 |3000 | 2300] 4000 | 6000 1085 | 1280 |1550 |1860 |2050 |2170 | 2400 | 2900 | 2120 | 2420] 2875} 3345 | 670| 1250| 1200] 1800/1900 | 2700 | 3400 |3800 | 2720 | 4700 | 7500 700 | 825 |1000 | 1200 |1325 |1400 |1550 | 1900 | 1350 | 1540] 1830] 2130] 430] 800] 640] 1150/1200 | 1700 | 2160 | 2400 | 1730 | 3000 | 4750 14.0 | 16.0 | 18.0 | 20.0 | 24.0 | 26.0 | 26.0| 28.0} 28.0 | 32.0/ 36.0| 42.0 | 5.5| 7.0| 10.0] 12.0/ 20.0 | 26.0 25.0] 30.0] 36 | 50] 70 820 |1070 {1350 | 1670 | 2400 | 2815 | 281543265 | 3255 | 4250| 5378] 7320 | 125] 205| 400] 600/1670 | 2600 | 2600 13740 | 5084 110375|20335 2.85 | 2.30 | 1.80| 1.45 | 1.25 | 1.15] 1.15] .97 | 2.45] 2.15} 1.67] 1.30] 1.50] 1.10] 1.20] 1.00} 1.60/1.00/ 1.00] 88 | 2.2] 1.14] .84 125"| 125| 125] 125] 125] 125] 150] 150} 125; 125} 125] 125] 150} 190] 150 190] 150] 150] 190] 190] 150] 150| 190 3000 | 2600 | 2000 | 1800 |1400 | 600| 600} 200 | 3000} 2600) 2200} 1400 }3000| 2000] 3000] 2000] 3000 | 2000| 1200 | 600 | 4400| 2500! 600 1200 | 1380 | 1660 | 1970 | 2210 | 2510] 2680 | 3350 | 1950 | 2100] 2550] 3000 | 710] 1330 | 1000 | 1760 | 2300 | 3320] 4350 | 4890| 2600] 4500 | 7200 3280 | 3800 | 4580 | 5400 | 6060 | 6840] 7360) 8680 | 8100 | 9240 j10980) 12780|2240] 4140] 3440| 6040| 5960 | 8780 1090011 2300110380/18000/285004 890 | 1020 | 1230 | 1460 | 1630 | 1860 | 1980| 2480| 1440| 1550/1890] 2220; ~ | | -} -| -]|] ~] =~ | ~ | - | -] - 400 400 400 400 400 -|-|-|]- - - 50 100 100 40 | 40 50 100 200 i138 2180 3180 3180] 4180 [4180 [3190 7190 3180 500 500 500 - ~ - - 2.0 2.0 2.0 - _ _ - 200 (400 TYPICAL) - - - ~ _ 2 2 2 - - - - 300 300 300 - - - - 20 20 30 12 16 20 30 10 10 20 6 8 10 20 10 10 10 - - - ~ 30 30 30 - ~ -_ - 5 5 5 - - - - 5 5 5 - - - - 3.0 3.0 3.0 - - - - 300 300 300 - - - - 10 10 20 - - ~ - 15 15 10 - - ~ _ 5 5 5 - - - - 2000/4400 200 6000/ 13200 500/1100 | 1000/2200 2000/4400 6000/ 13200 .025 .025 013 .09 06 .025 013 01 01 .006 .02 .012 01 .006 430 430 2.5 .140 .200 430 2.6 om (5) Vs s 1000V, Ith = 2x IT(ayy, Ty = 125C, Rep Rate 60 Hz, Gate Drive see below* (6) @ Max. Ty, to 80% of rated Von, (linear) (7) Ty = 125C, IpM = 500A, VR S SOV, di/dt = ~10A/ ys, Reapplied Volt. linear to VpRM (8) Caution: This could cause triggering and is not recommended (9) Ty= 26C Vp =9V (10) Derate Vorm. Yar, 10% for Operation below 0 C. *Standard Gate Drive: 3 Open Circuit Voltage = 20V, Source Impedance = 10 ohms, Pulse width = 10 ps, Rise Time = .2 psPOWER SEMTCONDUCTORS INC 32E D mM 7293490 cOODaKe 5 mmpos T-O7-0/ T7285 -oO/ STANDARD OPTIONS The PSI devices specified herein are based on standard devices that have proven most successful in service. Certain options have proven very valuable and are available on most PS | pressure mounted thyristors on special order. 1, Differential Voltage Ratings On standard devices the voltage rating is determined by the lowest reading of five voltages, i.e. VoRM VRRM @25C and at 125C, plus dv/dt. However, there are applications and circuits that place widely different requirements on VDRM. VRRM and dv/dt. Savings can often be realized on such units as shown below: PRICE RATIO A. F400-12 1.0 B. F400-18 1.5 C. F400-12/15/18 1.2 Thyristor A and B are measured by the standard method, while unit C offers VRrM of 1800V, VpoRm of 1500V and dv/dt of 100V/usec at 1200V. Thus, the vital Vp Riv is available at less cost than if all criteria had to be met. This option is particularly valuable on certain D.C. bridge applications where VpRM and dv/dt are not quite as important as Vary. 2. Suppression Rating This refers to the ability of a thyristor to block voltage in the forward direction immediately following surge current. This property is particularly important on protective systems known as ride through, whereby the equipment phases back to a safe value immediately following a current overload,* FIG. 1 illustrates this property and a typical specification would read as follows: from a starting Tj of 100C device must block VpRM of 1800 volts 4 milliseconds following 16000 amp surge. For more complete characterization of this property it is necessary that the user supply the following information: A. Junction temperature prior to surge B. Magnitude and duration of surge C. Magnitude of reapplied voltage D. Interval between surge and reapplied voltage SUPPRESSION *For more details refer to [EEE paper available fromP S I. CHARACTERISTIC VOLTAGE ac BLOCKS CURRENT ins scRi SCR GATE JUNCTION CURRENT=- SCRI toate REMOVED SIGNAL TO SCRz REMOVED FIG. I SUPPRESSION CHARACTERISTICS GENERAL INFORMATION ON SURGE; I2T %q RATED SURGE VS NUMBER OF SURGE CYCLES SUB CYCLE RATINGS SUB CYCLE SURGE RATINGS (HALF SINEWAVE) RATING 9 a 2 a 3 * g * a E 200 o3 3 le o< z ea > 4 S$ & t 2 8 = 150 = NUMBER OF HALF WAVE SINUSOID PULSES AT 60 HZ TIME IN MILLISECONDS UME IN nNPOWER SEMICONDUCTORS INC 32E D WE 7251450 0000367 7 BEPOS T-0l-o) E & F SERIES POWER PACKS (28mm.) . T- 2 S70) CASE TEMPERATURE POWER DISSIPATION FORWARD CURRENT Rectangular Wave Form* Double Side Cooled 360 or DC CONDUCTION Case = D.C. Wave Form Power Dissipation = 0.C, Rectangular Wove Form Maximum Power Dissipation Watts Maximum Allowable Cose Average Forward Current= Amperes Average Forward Current Amperes 120 CONDUCTION Case 120 Rec Power ion = 120 Wave Form erature C Pe 100 60 80 Allowable Case Tem 40 Maximum Power Dissipation Wotts 6 100 150 200 250 300 350 400 450 500 400 Average Forward Current = Amperes Average Forward Current Amperes 90 CONDUCTION Case Temperature = 90 Wave Form Maximum Power Dissipation ~ Watts Average Forward Current Amperes Average ~ Amperes *Use 120 rectangular vatues for 180 sine wave applications. 5POWER SEMICONDUCTORS INC E & F SERIES POWER PACKS (28mm.) JcE D @ 7291490 OO003b8 4 MEPOS T-ol-o! T-AS-Ol CASE TEMPERATURE vs FORWARD CURRENT Case -60" Wave Form Maximum Allowable Case Average Forward Current = Amperes Moximum Power Dissipation ~ Watts POWER DISSIPATION 60 CONDUCTION Power Oissipotion 60" Rectangular Wave form Average Forward Current Amperes 30 CONDUCTION fase Tamporature ~ 30 Wave Form Maximum Allowable Average Forward Current Amperes MAXIMUM FORWARD VOLTAGE DROP @125C Maztmum Forward Voltage Drop ~ Volts forward Currant = Amperes \ Maximum Power Dissipation Wotts = < = = = Power O1 30 Form bees + + Average Forward Current Amperes TRANSIENT THERMAL IMPEDANCE Junction to Case, Double Side Cooling TO cuRve esl fo [G0 | zp woe 0 010] 010 | 00s 90 o16 | 007 . Fe Tyre 60 O17 }oos 30 10 PUSE 120 SQUARE WAVE VALUE FOR 180 SINE WAVE APPLICATIONS 10 TUME + SECONDS. "etPOWER SEMICONDUCTORS INC 3eE D MM 7291490 OO00369 O MHPOS T-ol-ol G SERIES MEGA PACKS (33mm.) T-2S-Ol CASE TEMPERATURE POWER DISSIPATION vs FORWARD CURRENT Rectangular Wave Form* Double Side Cooled 360 or DC CONDUCTION Wave Form Power Dissipation 0.C. Wave Form Maximum Power Dissipation = Watts 600 Mextmum Allowable Case Temperature - C 200 0 300 400 $00 600 800 Average Forward Current= Amperes Average Forward Current - Amperes 120 CONDUCTION Power tion = 120 Wave Form Maximum Power Dissipation Watts Maximum Allowable Cose Temperature = C 0 100 200 300 400 500 600 700 800 900 1000 Average Forward Current = Amperes Average Forward Current Amperes 90 CONDUCTION Case Temperature 90 Wave form Power = 90 Rectangular Wave Form Moximum Allowable Case Temperature -C Maximum Power Dissipation Wotts Average Forward Current = Amperes Average Forward Curcent Amperes *Use 120 rectangular values for 180 sine wave applications. 7POWER SEMICONDUCTORS INC Jee D MM 72914590 0000370 7 MMPOS G SERIES MEGA PACKS (33mm.) 7T-o1-ol _ MmQS-O! CASE TEMPERATURE vs FORWARD CURRENT Case Temperature 60 Rectangular Wave form ature C Maximum Allowable Cose Average Current = Amperes POWER DISSIPATION 60 CONDUCTION Power Dissipation 60 Rectangular Wave Form Maximum Power Dissipation Walls 400 $00 Average Forward Current = Ampeces 30 CONDUCTION Case Temperature ~ 30 Rectangular Wave Form Maximum Allowable Case Temperature - C Average Forward Current Amperes MAXIMUM FORWARD VOLTAGE DROP @ 125C Voltage Drop = Volts Power Dissipation = 30 Rectangular Wave form Maximum Power Average Forward Current Amperes TRANSIENT THERMAL IMPEDANCE TO CURVE wt} G to foo} zp Oto} O10 HU vet O17 [oos e190POWER SEMICONDUCTORS INC 32 D m 7292490 0000372 0 mEPOS F-ol-ol J-25-o! Z SERIES ASTRO PACKS (52mm.) CASE TEMPERATURE POWER DISSIPATION vs FORWARD CURRENT 60 CONDUCTION Maximum Power Dissipation Watts Moximum Allowable Cose 200 400 600 800 1000 61200 6400 =(1600~s1800 Average Forward Current Amperes Average Forward Current Amperes 30 CONDUCTION Wave form oture C Maximum Power Dissipation Watts Moxamum Allowable Case oO 200 400 600 800 woo 1200 1400 1600 2000 Average Forword Current - Amperas Average Forward Current Amperes MAXIMUM FORWARD VOLTAGE DROP @ 125C TRANSIENT THERMAL IMPEDANCE FO Curve etl so fo | Go | zp tof 140 a10] o10 | cos 20" 014 | oo7 0 017 | 008 30 ato SUSE 120 SQUARE WAVE VALUE FOR 150 SINE WAVE APPLICATIONS Maximum Forward Voltage Drop Voirs TRANSIENT THERMAL 10 forward Current Amperes TIME SECONDS 10Maximum Allowable Cose Temperature C Maximum Allowable Case Temperature ="C POWER SEMICONDUCTORS INC 32E D) Mm 7291490 0000373 2 mmPOS . T-ol-ot 76mm J-PACK, J-D, 102mm K-PACK, K-D T-2a5-0/ CASE TEMPERATURE POWER DISSIPATION Vs FORWARD CURRENT 120 CONDUCTION Wave form Power Dissipation = 120 Rectangular Wave Form Maximum Power Dissipation Watts Average Forward Current Amperes Average Forward Current Ampeces 60 CONDUCTION Wave form Power Wave Form Meximum Power Dissipation Watts Aversge Forword Current = Average Forward Current = MAXIMUM FORWARD VOLTAGE DROP @125C Meximum Forward Valtage Drop * Maximum Forward Voltage Drop Volts Forward Current = Amperes 11POWER SEMICONDUCTORS INC 32E D WM 7293490 0000374 4 mm@POS T-Ol-ol INTERCHANGEABILITY GUIDE Teas -o} WwW PSI IR PS! GE PSI T520 13 E 180/D 220 175 PA E 300/D 400 C 350 E 220/D 220 T620 13 E 180/D 220 250 PA E 400/D 400 Cc 380 E 400/D 400 T620 15 E 220/D 220 300 PA E 500/D 510 A 390 ED 900 T620 20 E 300/D 400 350 PL E 600 T620 28 E 400/D 400 C 430 E 600* T620 30 E 500/D 510 C 450 Z 1600 R620 30 ED 600 R620 40 ED 600 R620 50 ED 900 T720 13 F 180 801 PD GD 1400 C501 ; G 950 T720 15 F 220 801 PDB GD 1400 C 507 G 650 T720 20 F 300 7720 25 F 400 400 eo A 500 GD 1400 T720 35 G 650 470 PA G 850 A 540 GD 1400 T720 45 G 850 0 oe ep A 570 GD 1500 T720 55 G 950 550 PA G 950 801 PD GD 1400 801 PDB GD 1400 T920 06 Z 800 700 PA Z 1000 Cc 602 Z 800 T920 07 Z 1000 700 PK Z 1000 Cc 601 Z 1000 T920 08 Z 1200 850 PA Z 1200 Cc 600 Z 1200 T920 09 Z 1200 850 PK Z 1200 C701 Z 1600 T920 10 Z 1400 1000 PA Z 1400 R920 11 ZD 1500 1000 PK Z 1400 R920 16 ZD 2100 1600 PA Z 2000 R920 20 ZD 2500 2001 PD ZD 2500 NOTE Above listing is for guidance only, detailed comparisons should be made from specification sheets. *E 600 is closest part to C 430; consult factory. 12POWER SEMICONDUCTORS INC 32E D MM 7291490 O000375 & BEPOS DIODE SERIES FD, GD, ZD (28, 33, 52mm.) T= O1- of T-AS5-O1 CASE TEMPERATURE POWER DISSIPATION vs FORWARD CURRENT Rectangular Wave Form* Double Side Cooled 360 or DC CONDUCTION 200 75 125 150 2500 2 100 1500 75 1000 Moximum Allowable Cose Temperature -"C 50 Moximum_ Forward Power Watts 500 600 800 1000 1800. 2000. 400 600 800 1900 4200 1400 Average Forward Current Amperes Average Forward Current Amperes 120 CONDUCTION 150 5 200 2500 ns ns 100 1500 5 3 ' . 6 3 3 a. 2 z S 3 * & 2 7s 1000 Moximum Allowable Cose Temperature C 50 25 3 200 400 600 800 1000 1200 1400 1600, 1800 2000 400 600 800 1000. 1200 1400 Average Forward Current - Amperes Average Forword Current Amperes 90 CONDUCTION Case = 90 Wave Form 75 100 125 180 175 200 Maximum Allowable Case Temperature C 50 1800 = 2000 200 600 800 1000 1700 1600 Average Forward Current = Amperes Average Forward Current Amperes *Use 120 rectangular values for 180 sine wave applications. 13POWER SEMICONDUCTORS INC Jee D MM 7291L490 0000376 & MHPOS J-01-0) DIODE SERIES FD, GD, ZD (28, 33, 52mm.) T-2 5 -0 f CASE TEMPERATURE POWER DISSIPATION vs FORWARD CURRENT 60 CONDUCTION Wave Form 50 75 100 25 1s0 ' forward Pawer Maximum Allowoble Case Temperature C 25 400 600 800 1000 1200 1400 Average Forward Current Amperes Average Forword Current = Amperes 30 CONDUCTION Case Temperature = 30 Wava form Power 30 Wave Form 200 Ws 125 150 2500 3000 2 oo 1500 5 1000 $0 500 Moximum Allowable Case Temperature C Maximum Forward Power Watts a Average forward Current ~ Amperes Average.Forword Current Amperes MAXIMUM FORWARD VOLTAGE DROP @ 190C TRANSIENT THERMAL IMPEDANCE To curve eel c FO GD fu tao" 140 o10 go" 40 30 010 "USE 120 SQUARE WAVE VALUE FOR 180 SINE WAVE APPLICATIONS Moximum forward Voltage Orop Volrs TRANSIENT forward Current ~ Amperes TIME + SECONDS 14POWER SEMICONDUCTORS INC 3eE D BM 7291490 0000377 T MPOS T-ol-ol T-25 -0l As the first power semiconductor manufacturer to switch completely to pressure mounted devices, PS t was forced to develop hardware and cooling systems before most other suppliers. With the introduction of the 52mm ASTRO- PACK, the 76mm and 102mm units, we had to update this work to mount and cool devices approximately 2.5 times !arger than those in general use. PS 1 POWER PACKAGE ASSEMBLIES You will see many examples of our results on the next pages, but please remember that all such designs are available to users of PSI semiconductors. PS | has no vested interest in assemblies themselves and will gladly share the details of any standard unit you see on the next page. (Obviously the custom assemblies we build for many clients remain their exclusive property). With this thought in mind many customers turn to PS! standard Power Packages for prototype and low volume production, building their own with PSI assistance if ultimate volume warrants. By using common parts they can take advantage of PS! inventories to supplement their own or for emergency service. Others prefer to let PSI handle the whole job in view of the fact that they have enough details to worry about without the following: What it requires to assemble a Power Package: Design Extrusion Test == Clamps Purcha SS Mounting brackets Expedite SSS tee Terminal Boards Stock = = Cooling Fans Assemble Fan brackets Supports ~ Semiconductor Six steps times nine materials versus the PS |_ Power Package customer who simply purchases a proven assembly. How to find the best Power Package for your job. 1. First determine the necessary circuit configuration i.e. A.C. switch, D.C. bridge, star or double wye single or three phase., e.g. controlling a 100 H.P. A.C. motor requires an A.C. switch. 2. Then, the necessary current to be rectified or controlled, under the most severe possible conditions of temperature, conduction angle, coolant flow, overloads, etc., e.g., continuous line current is 220 amps RMS. 3. What type of cooling is available and desirable. Liquid cooling of course is most effective, then forced air or free convection. Basic reliability runs in the reverse order, with free convection ideal for relatively light loads and liquid cooling requiring the most attention to many details, e.g. forced air is permissible for our starter example. 4, You can then aim for basic areas from the load current listing on pages 2 and 3. These give close approxima- tions of current available from various PSI devices, using the most popular cooling scheme, heatsinks and flow. e.g. this corresponds to the F-500, on an RL heatsink. We then turn to pages 17A - 17L for more details. 15POWER SEMICONDUCTORS INC Code No. J2E D BM 7291490 0000378 2 MEPOS Tole! ASSEMBLY ORDERING CODE TAS -6] A typical basic part number would be as follows: Code No. ~ | 1 2 3 4 5 6 7 8 psi-|6 | 2 | RL| A | F | 03 | 08 |SAA| Cxample , example above 1, Number of devices in assembly. (6 devices) 2. Number of devices in series with cooling flow. (2 devices) 3. Type of Heatsink: (RL Type 42) UL 6 U-Channel (for F and G Types) WM 4.5" Medium (for F and G Types) RL 6 Type 42 (for F, G, and Z Types) RX 6 Type 42 Copper (for F, G, and Z Types) WL 7.5 Large (for F, G, and Z Types) AS 6 Astrosink (for F, G, and Z Types) XM (for Z and J Types) HS Water Cooled (for F, G, and Z Types) HL Water Cooled (for J and K Types) 4. Type of Circuit: (AC Switch) A AC switch B Bridge S Star W Double Wye } cathodes common P Parailel 5. Device Family: (F Pack) F PowerPack 28mm SCR G Mega Pack 33mm SCR H Astro Pack 52mm SCR D Diode all diodes J J Pack 76mm SCR K K Pack 102mm SCR 6. Type of Device: (F300) Device part number divided by 100 example Z 1000 > 10 G850 > 8 7. Voltage rating of device divided by 100 (800V) example 1000V. > 10 800V + 08 8. Suffix Letters: (Mounting Tabs) SCR or Diode Assembly Hybrid Circuit SAA Mounting tabs, Fast Access SBA Mounting tabs SAB Tabs and fan, Fast Access SBB Tabs and fan SAC Tabs and 2 fans, Fast Access SBC Tabs and 2 fans SAD Phenolic mounting rails SBD Phenolic mounting rails SAE No mounting rails SBE No mounting rails SAF ~ Phenolic mounting rails and 2 fans SBF Phenolic mounting rails and 2 fans example 3 phase 6 SCR Bridge, 2 in series with airflow in a type 42 Heatsink using Z 1000-12 with Fast Access feature answer 62RLB Z10-12 SAA THE ASSEMBLIES ARE SHOWN BELOW WITH OPTIONAL PHENOLIC MOUNTING RAILS: TYPE U TYPE RL Note: Types AS, XM come in single heatsinks only. Types UL, WM, RL, WL, are available in 63 16 Boe sk Lolli eed TYPE WM TYPE WL Types HS come in single (11HS), double (22HS) or triple (33HS) only. or 33 assemblies (3 in series with air flow).POWER SEMICONDUCTORS INC 3eE D MM 7292490 0000379 3 MHPOS oun 7 -oO/-ol HEATSINK THERMAL RESISTANCE (HS. to AMBIENT in C/W) T-2S5-O) AIR COOLED | NO. IN SERIES O m/s 2.5 m/s 5.0 m/s 7.5 m/s 10.0 m/s HEATSINKS | with AIR FLOW OLFM 500 LFM 1000 LFM 1500 LFM 2000 LFM TT UL 1 1.5 .47 33 24 .20 22 UL 2 1.7 .50 .35 .26 22 33 UL 3 1.9 53 a7 .28 .24 11WM 1 .60 .19 .15 .18 17 22 WM 2 .66 .27 .2t 19 .18 33 WM 3 .70 32 23 .20 .19 TRL 1 .60 .13 .09 .07 .06 22 RL 2 70 .18 11 .08 .07 33 RL 3 .80 .23 .15 .12 .10 11 WL 1 .32 12 .09 .075 .07 22 WL 2 .35 .13 .095 .080 .075 33 WL 3 .40 .14 .10 .085 .08 11 AS 1 .50 12 .08 .06 .05 11 RX 1 .55 .10 .07 .06 .05 11XM 1 24 .06 .04 .035 .03 22 XM 2 .30 .07 .05 .04 .035 WATER COOLED NO. IN SERIES .03 I/s .06 I/s .09 I/s .12 V/s HEATSINKS with WATER FLOW .5 GPM 1.0 GPM 1.5 GPM 2.0 GPM 11 HS 1 .03 .02 .015 .O1 22 HS 2 .04 .03 .025 .02 33 HS 3 .05 .04 035 .03 11 HL 1 - 007 -_ _ 21 HL 1 - .007 _ 17APOWER SEMICONDUCTORS INC 32eE D WM 7291490 00003480 T GEPOS T- 0170 | 3 @ DC BRIDGE THYRISTOR POWER ASSEMBLY /- a 5 Ol AIR COOLED UL TYPE HEATSINK (Two in Series with Air Flow, 120 Conduction) 40C AIR 50C AIR 62 ULB DEVICE MAX. 62 ULB Om/s 2.5 m/s 5.0 m/s TYPE VOLT. 0 m/s 2.5 m/s 5.0 m/s OLFM 500 LFM 1000 LFM RATING OLFM 500 LFM 1000 LFM 55 120 174 F 180 3000 40 108 155 70 150 216 F 220 2600 55 132 189 85 210 297 F 300 2000 75 180 261 100 270 354 F 400 1800 90 225 321 120 285 372 F 500 1800 105 240 336 130 300 432 F 600 1000 115 294 381 70 200 260 G 300 3000 55 170 230 85 240 320 G 400 2600 75 210 280 100 290 260 G 500 2000 90 260 330 120 320 410 G 650 1800 105 290 370 140 350 440 G 850 1800 120 310 400 160 380 480 G 950 1600 140 340 430 3 @ DC BRIDGE THYRISTOR POWER ASSEMBLY AIR COOLED WM TYPE HEATSINK (Two in Series with Air Flow, 120 Conduction) 40C AIR 50 AIR 62 WMB DEVICE MAX, 62 WMB 0 m/s 2.5 m/s 5.0 m/s TYPE VOLT. O m/s 2.5 m/s 5.0 m/s OLFM 500 LFM 1000 LFM RATING OLFM 500 LFM 1000 LFM 150 210 252 F 180 3000 130 180 219 180 255 300 F 220 2600 160 225 270 215 330 390 F 300 2000 195 300 360 265 390 480 F 400 1800 245 360 435 290 420 510 F 500 1800 270 390 450 340 495 585 F 600 1000 310 450 525 170 310 360 G 300 3000 150 280 330 230 420 510 G 500 2000 210 380 460 270 480 580 G 650 1800 420 430 520 300 520 620 G 850 1800 270 430 560 330 560 680 G 950 1600 300 510 620 17BPOWER SEMICONDUCTORS INC Jee D Me 7291490 0000381 1 MEPOS T-0l- Of * oor ae Seceo ncrene weary TAS of (Two in Series with Air Flow, 120 Conduction) 40C AIR 50C AIR 62 RLB DEVICE MAX. 62 RLB 0 m/s 2.5m/s | 5.0m/s | 7.5 m/s TYPE VOLT. 0 m/s 2.5m/s | 5.0m/s | 7.5 m/s OLFM | 500 LFM |1000 LFM /1500 LFM RATING OLFM | 500 LFM | 1000 LFM /1500 LFM 120 270 340 380 F 180 3000 100 240 310 340 150 330 400 450 F 220 2600 130 290 360 400 190 420 520 580 F 300 2000 170 380 470 520 250 510 630 700 F 400 1800 230 460 570 640 290 540 670 750 F 500 1800 260 480 600 670 320 620 750 840 F 600 1000 290 550 680 760 170 380 480 550 G 300 3000 150 350 440 500 200 460 590 670 G 400 2600 180 420 530 610 230 540 680 770 G 500 2000 210 490 620 700 270 620 770 890 G 650 1800 240 560 700 800 300 660 840 950 G 850 1800 270 600 760 860 330 720 920 1040 G 950 1600 300 650 830 950 200 610 820 980 Z 800 3000 180 550 740 890 270 690 940 1120 Z 1000 2600 250 620 850 1010 330 830 1130 1350 Z 1200 2000 300 750 1020 1220 360 990 1350 1600 Z 1400 1800 330 890 1220 1450 390 1110 1510 1800 Z 1600 1400 360 1000 1360 1630 440 1270 1720 2050 Z 1800 600 390 1140 1560 1850 480 1310 1810 2170 Z 2000 600 420 1180 1630 1960 600 1640 2250 2680 Z 2300 400 510 1520 2080 2480 17CPOWER SEMICONDUCTORS INC 32 D mM 7292490 000036e 3 MEPOS T-Ol-o! _ . 3 @ DC BRIDGE THYRISTOR POWER ASSEMBLY ! a5 o! AIR COOLED WL TYPE HEATSINK (Two in Series with Air Flow, 120 Conduction) 40 CAIR 50C AIR 62 WLB DEVICE MAX. 62 WLB 0 m/s 2.5m/s | 5.0m/s | 7.5 m/s TYPE VOLT. 0 m/s 2.5m/s | 5.0m/s | 7.5 m/s OLFM | 500 LFM } 1000 LFM! 1500 LFM RATING OLFM ; 500 LFM | 1000 LFM|1500 LFM 170 320 360 380 F 180 3000 150 280 320 340 220 380 430 450 F 220 2600 190 340 380 400 300 480 540 580 F 300 2000 260 440 490 520 350 590 660 700 F 400 1800 320 530 600 640 370 630 700 750 F 500 1800 340 560 640 670 420 710 800 840 F 600 1600 380 640 720 760 260 450 510 550 G 300 3000 230 400 470 500 320 550 630 670 G 400 2600 280 490 570 610 360 640 720 770 G 500 2000 330 580 660 700 410 720 830 890 G 650 7800 370 650 750 800 440 780 900 950 G 850 1800 400 700 810 860 480 850 950 1040 G 950 1600 430 770 870 950 380 740 900 980 Z 800 3000 340 670 800 890 430 860 1020 1120 Z 1000 2600 380 770 930 1010 510 1030 1230 1350 Z 1200 2000 460 930 1110 1220 610 1220 1460 1600 Z 1400 1800 540 1100 1340 1450 680 1370 1630 1800 Z 1600 1400 610 1230 1480 1130 780 1560 1880 2050 Z 1800 600 700 1410 1700 1850 790 1640 1980 2170 Z 2000 600 710 1470 1800 1960 1000 2040 2460 2680 Z 2300 400 920 1880 2260 2480 17D nePOWER SEMICONDUCTORS INC 32E D MM 7291490 0000363 5 MEPOS T-0l-o1 T-yS-ol 3 @ DC BRIDGE THYRISTOR POWER ASSEMBLY AIR COOLED AS TYPE HEATSINK (One in Series with Air Flow, 120 Conduction) 40 C AIR . 50C AIR 62 ASB DEVICE MAX. ; 62 ASB 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s 10.0 m/s 1000 LFM 1500 LFM 2000 LFM RATING 1000 LFM 1500 LFM 2000 LFM 980 1120 1210 Z 800 3000 890 1010 1100 1120 1290 1390 Z 1000 2600 1010 1170 1260 1350 1550 1680 Z 1200 2000 1220 1400 1520 1600 1840 1990 Z 1400 1800 1450 1670 1800 1800 2070 2230 Z 1600 1400 1630 1870 2020 1050 2340 2530 Z 1800 600 1850 2130 2300 2170 2500 2710 Z 2000 600 1960 2260 2450 2680 3070 2210 Z 2300 400 2480 2840 3080 3 @ DC BRIDGE THYRISTOR POWER ASSEMBLY AtR COOLED XM TYPE HEATSINK (One in Series with Air Flow, 120 Conduction) | 40C AIR 50C AIR 61 XMB DEVICE MAX. 61 XMB 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s 10.0 m/s 1000 LFM 1500 LFM 2000 LFM RATING 1000 LFM 1500 LFM 2000 LFM 1320 1380 1450 Z 800 3000 1200 1260 1320 1520 1600 1680 Z 1000 2600 1380 1450 1520 1830 1920 2020 Z 1200 2000 1660 1740 1830 2170 2280 2390 Z 1400 1800 1970 2070 2170 2440 2560 2680 Z 1600 1400 2210 2320 2440 2760 2890 3030 Z 1800 600 2510 2630 2760 1960 3110 3260 Z 2000 600 2680 2820 2960 3600 3770 3950 Z 2300 400 3350 3510 3680 I7EPOWER SEMICONDUCTORS INC 3eE D M@@ 7292490 GO00364 7 MEPOS T-ol-ol 1 @ and 3 @ AC SWITCH THYRISTOR POWER ASSEMBLY T-A 5-6! AIR COOLED UL TYPE HEATSINK . (Two in Series with Air Flow, 180 Conduction) 40C AIR 50C AIR 22 ULA or 62 ULA DEVICE MAX. 22 ULA or 62 ULA 0 m/s 2.5 m/s 5.0 m/s TYPE VOLT. Om/s 2.5 m/s 5.0 m/s OLFM 500 LFM 1000 LFM RATING OLFM 500 LFM 1000 LFM 40 90 130 F 180 3000 30 80 113 50 110 160 F 220 2600 40 98 140 65 160 220 F 300 2000 55 133 193 75 200 260 F 400 1800 70 167 238 80 210 280 F 500 1800 75 178 249 85 220 310 F 600 1000 80 218 282 50 150 190 G 300 3000 40 120 170 60 180 240 G 400 2600 55 150 210 75 210 270 G 500 2000 65 190 240 85 240 300 G 650 1800 75 210 270 100 260 330 G 800 1800 90 230 290 120 280 360 G 950 1600 100 250 320 1 @ and 3 @ AC SWITCH THYRISTOR POWER ASSEMBLY AIR COOLED WM TYPE HEATSINK (Two in Series with Air Flow, 180 Conduction) 40C AIR 5O CAIR 22 WMA or 62 WMA DEVICE MAX. 22 WMA or 62 WMA 0 m/s 2.5 m/s 5.0 m/s TYPE VOLT. O m/s 2.5 m/s 5.0 m/s OLFM 500 LFM 1000 LFM RATING OLFM 500 LFM 1000 LFM 110 155 185 F 180 3000 95 130 160 130 199 220 F 220 2600 120 165 200 160 245 290 F 300 2000 145 220 265 195 290 355 F 400 1800 180 265 320 215 310 380 F 500 1800 200 290 330 250 365 430 F 600 1000 230 330 390 125 230 270 G 300 3000 110 210 240 150 270 320 G 400 2600 130 240 290 170 310 380 G 500 2000 155 280 340 200 350 430 G 650 1800 175 320 380 220 380 460 G 850 1800 200 350 410 245 410 500 G 950 1600 220 380 460 17F3e2E D MM 72914590 0000385 95 MEPOS oo T-61-O/ T-AS-O! POWER SEMICONDUCTORS INC 1@ and 3 @ AC SWITCH THYRISTOR POWER ASSEMBLY AIR COOLED RL TYPE HEATSINK (Two in Series with Air Flow, 180 Conduction) 40 CAIR 50C AIR 22 RLA or 62 RLA DEVICE MAX. 22 RLA or 62 RLA Om/s 2.5m/s | 5.0m/s | 7.5 m/s TYPE VOLT. Om/s 2.5 m/s | 5.0m/s | 7.5 m/s OLFM | 500LFM |1000 LFM ;1500 LFM RATING OLFM | 500 LFM | 1000 LFM |1500 LEM 85 200 250 280 F 180 3000 75 180 230 250 110 240 300 330 F 220 2600 95 210 . 270 300 140 310 380 430 F 300 2000 125 280 350 380 185 380 470 520 F 400 1800 170 340 420 470 215 400 500 560 F 500 1800 190 360 450 500 235 460 560 620 F 600 1000 215 410 500 560 125 280 350 410 G 300 3000 110 260 320 370 145 340 430 490 G 400 2600 130 310 390 450 170 400 500 570 G 500 2000 155 360 460 520 200 460 570 660 G 650 1800 175 410 520 590 220 490 620 700 G 850 1800 200 440 560 630 245 530 680 770 G 950 1600 220 480 610 700 145 450 610 730 Z 800 3000 130 410 550 660 200 510 700 830 Z 1000 2600 185 460 630 750 245 610 840 1000 Z 1200 2000 220 560 750 900 265 730 1000 1180 Z 1400 1800 240 660 900 1070 290 820 1120 1330 z 1600 1400 260 740 1000 1210 320 940 1270 1520 Z 1800 600 290 840 1150 1370 350 970 1340 1610 Z 2000 600 310 870 1200 1450 440 1210 1670 1980 Z 2300 400 380 1120 1540 1840 17GPOWER SEMICONDUCTORS INC JcE D WH 7292490 oo0038 Oo MEPOS T-ol-ol T-a4 9! 1@ and 3 @ AC SWITCH THYRISTOR POWER ASSEMBLY AIR COOLED WL TYPE HEATSINK (Two in Series with Air Flow, 180 Conduction) ) 40C AIR 50C AIR 22 WLA or 62 WLA DEVICE MAX. 22 WLA or 62 WLA O m/s 2.5m/s | 5.0m/s } 7.5 m/s TYPE VOLT. Om/s 2.5m/s | 5.0m/s | 7.5 m/s OLFM | 500 LFM | 1000 LEM| 1500 LFM RATING | OLFM | 500 LFM |1000 LFM| 1500 LFM 130 240 270 280 F 180 3000 110 210 240 250 160 280 320 330 F 220 2600 140 250 280 300 220 360 400 430 F 300 2000 190 330 360 - 380 260 440 490 520 F 400 1800 240 390 440 470 270 470 520 560 F 500 1800 250 410 470 500 310 530 590 620 F 600 1000 280 470 530 560 190 330 380 410 G 300 3000 170 290 350 370 230 410 460 490 G 400 2600 210 360 420 450 260 470 530 570 G 500 2000 240 430 490 520 300 530 610 660 G 650 1800 270 480 550 590 320 580 660 700 G 850 1800 290 520 600 630 350 630 700 770 G 950 1600 320 570 640 700 ) 280 550 670 730 Z 800 3000 250 500 590 660 320 640 750 830 Z 1000 2600 280 570 690 750 380 760 910 1000 Z 1200 2000 340 690 820 900 450 900 1080 1180 Z 1400 1800 400 810 990 1070 500 1010 1210 1330 Z 1600 1400 450 910 1100 1200 580 1150 1390 1510 Z 1800 600 520 1040 1260 1370 585 1210 1470 1610 Z 2000 600 530 1090 1330 1450 740 1510 1820 1980 Z 2300 400 680 1390 1670 1840 17HPOWER SEMICONDUCTORS INC 3eE D WB 7253490 0000387 2 mmPOS T-o/-ol T-2s-O) 1 @ and 3 @ AC SWITCH THYRISTOR POWER ASSEMBLY AIR COOLED AS TYPE HEATSINK (One in Series with Air Flow, 180 Conduction) 40C AIR 50 CAIR 22 ASA or 62 ASA DEVICE MAX. 22 ASA or 62 ASA 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s 10.0 m/s 1000 LFM | 1500LFM | 2000 LEM RATING | 1000LFM | 1500LFM | 2000LEM 720 830 890 Z 800 3000 660 750 810 830 950 1030 Z 1000 2600 750 860 930 1000 1150 1240 Z 1200 2000 900 1030 1120 1180 1360 1470 Z 1400 1809 1070 1230 1330 1330 1530 1650 Z 1600 1400 1200 1380 1490 1520 1730 1870 Z 1800 600 1370 1570 1700 1600 1850 2000 Z 2000 600 1450 1670 1810 1980 2270 2450 Z 2300 400 1830 2100 2280 1 and 3 @ AC SWITCH THYRISTOR POWER ASSEMBLY AIR COOLED XM TYPE HEATSINK (One in Series with Air Flow 180 Conduction) 40 CAIR 5OCAIR 22 XMA or 62 XMA DEVICE MAX. 22 XMA or 62 XMA 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s 10.0 m/s 1000 LFM 1500 LFM 2000 LFM RATING 1000 LFM 1500 LEM 2000 LFM 970 1020 1070 Z 800 3000 890 930 970 1120 1180 1240 Z 1000 2600 1020 1070 1120 1350 1420 1490 Z 1200 2000 1230 1290 1350 1600 1690 1770 Z +400 1800 1460 1530 1600 1800 1890 1980 Z 1600 1400 1630 1710 1800 2040 2140 2240 Z 1800 600 1860 1940 2040 2190 2300 2410 Z 2000 600 1980 2080 2190 2660 2790 2920 Z 2300 400 2480 2600 2720 171POWER SEMICONDUCTORS INC 32E D w@ 7292490 0000386 4 MMPOS a ~ 7-0 {-oO | 3 @ DC BRIDGE DIODE POWER ASSEMBLY 7-a 5 -gl AIR COOLED UL TYPE HEATSINK (Two in Series with Air Flow, 120 Conduction) 40 CAIR 50C AIR 62 ULB DEVICE MAX. 62 ULB ~ O m/s 2.5 m/s 5.0 m/s TYPE VOLT. Om/s 2.5 m/s 5.0 m/s OLFM 500 LFM 1000 LFM RATING OLFM 500 LFM 1000 LFM 100 360 450 FD 600 3000 90 340 420 190 610 780 FD 900 2000 180 580 730 135 450 580 GD 800 3000 120 410 530 250 730 950 GD 1400 2000 230 680 890 3 @ DC BRIDGE DIODE POWER ASSEMBLY AIR COOLED WM TYPE HEATSINK (Two in Series with Air Flow, 120 Conduction) 40C AIR SOC AIR 62 WMB DEVICE MAX. 62 WMB O m/s 2.5 m/s 5.0 m/s TYPE VOLT. 0 m/s 2.5 m/s 5.0 m/s OLFM 500 LFM 1000 LFM RATING OLFM 500 LFM 1000 LFM 250 510 610 FD 600 3000 230 480 560 490 910 1080 FD 900 2000 460 _ 850 1020 330 660 810 GD 800 3000 300 630 750 590 1120 1360 GD 1400 2000 550 1050 1280 17 JPOWER SEMICONDUCTORS INC 32E D WM 7292450 00003859 & MEPOS _ 1-O/-0 3 @ DC BRIDGE DIODE POWER ASSEMBLY / AIR COOLED RL TYPE HEATSINK / AT -o/ (Two in Series with Air Flow, 120 Conduction) 40C AIR 5OC AIR 62 RLB DEVICE MAX. 62 RLB Om/s 2.5 m/s 5.0 m/s 7.5 m/s TYPE VOLT. Om/s | 2.5m/s 5.0 m/s 7.5 m/s OLFM 500 LFM | 1000 LFM}1500 LFM RATING OLFM 500 LFM | 1000 LFM |1500 LFM 240 630 760 840 FD 600 3000 220 590 780 780 470 1140 1400 1560 FD 900 2000 430 1070 1330 1480 320 860 1080 1220 GD 800 3000 290 790 1000 1140 560 1450 1860 2130 GD 1400 2000 530 1360 1760 2010 380 1130 1540 1830 ZD 1500 3000 340 1040 1430 1700 520 1580 2180 2610 ZD 2100 2000 480 1450 2010 2410 700 2070 2830 3370 ZD 2500 1200 660 1950 2670 3190 770 2290 3150 3770 ZD 3000 600 720 2160 2970 3560 3 @ DC BRIDGE DIODE POWER ASSEMBLY AIR COOLED WL TYPE HEATSINK (Two in Series with Air Flow, 120 Conduction) 40 CAIR 50C AIR 62 WLB DEVICE MAX. 62 WLB Om/s 2.5 m/s 5.0 m/s 7.5 m/s TYPE VOLT. Om/s 2.5 m/s 5.0 m/s 7.5 m/s OLFM 500 LFM | 1000 LFM |1500 LFM RATING OLFM 500 LFM | 1000 LFM }1500 LFM 450 720 800 840 FD 600 3000 420 670 750 780 780 1320 1480 1560 FD 900 2000 730 1240 1400 1480 580 1000 1140 1220 GD 800 3000 530 930 1060 1140 950 1720 1980 2130 GD 1400 2000 890 1620 1870 2010 700 1400 1670 1830 ZD 1500 3000 640 1290 1540 1700 950 1960 2380 2610 ZD 2100 2000 870 1810 2190 2410 1260 2550 3090 3370 ZD 2500 1200 1190 2410 2760 3190 1390 2840 3430 3770 ZD 3000 600 1310 2680 3240 3560 17KPOWER SEMICONDUCTORS INC 3eE D WM 7290490 0000390 MMEPOS T-ol-ol 3 @ DC BRIDGE DIODE POWER ASSEMBLY AIR COOLED AS TYPE HEATSINK T-AS of (One in Series with Air Flow, 120 Conduction) 40 CAIR 50C AIR >) 62 ASB DEVICE MAX. 62 ASB 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s 10.0 m/s 1000 LPM 1500 LFM 200C LFM RATING 1000 LFM 1500 LFM 2000 LFM 1830 2100 2270 ZD 1500 3000 1700 1950 2110 2610 3020 3280 ZD 2100 2000 2410 2790 3030 3370 3890 4210 ZD 2500 1200 3190 3680 3980 3770 4356 4720 ZD 3000 600 3560 4110 4470 3 @ DC BRIDGE DIODE POWER ASSEMBLY AIR COOLED XM TYPE HEATSINK (One in Series with Air Flow, 120 Conduction) 40 CAIR 50CAIR 62 XMB DEVICE MAX. 62 XMB 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s 10.0 m/s 1000 LFM 1500 LFM 2000 LFM RATING 1000 LFM 1500 LFM 2000 LFM 2470 2590 2710 ZD 1500 3000 2300 2410 2520 3590 3780 3970 ZD 2100 2000 3320 3500 3680 4590 4950 5070 ZD 2000 1200 4350 4570 4800 5160 5430 5700 ZD 3000 600 4890 5140 5400 6 @ STAR DIODE POWER ASSEMBLY d AIR COOLED AS TYPE HEATSINK (One in Series with Air Flow, 60 Conduction) 40C AIR 50 CAIR 62 ASS DEVICE MAX. 62 ASS 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s 10.0 m/s 1000 LFM 1500 LFM 2000 LFM RATING 1000 LFM 1500 LFM 2000 LFM 3050 3440 3690 ZD 1500 3000 2849 3210 3450 4490 5130 5540 ZD 2100 2000 4170 4770 5140 5720 6510 6990 ZD 2000 1200 5430 6180 6650 6450 7360 7920 ZD 3000 600 6120 6980 7520 6 @ STAR DIODE POWER ASSEMBLY AIR COOLED XM TYPE HEATSINK (One in Series with Air Flow, 60 Conduction) 40 CAIR . 50 CAIR 62 XMS DEVICE MAX. 62 XMS 5.0 m/s 7.5 m/s 10.0 m/s TYPE VOLT. 5.0 m/s 7.5 m/s _ 10.0 m/s 1000 LFM 1500 LFM 2000 LFM RATING 1000 LFM 1500 LFM 2000 LFM 3980 4150 4330 ZD 1500 3000 3720 3880 4050 6010 6290 6580 ZD 2100 2000 5580 5850 6120 . 7580 7930 8280 ZD 2500 1200 7200 7530 7870 >) 8600 9000 9400 ZD 3000 600 8160 8540 8930 7bLPOWER SEMICONDUCTORS INC 3eE D WM 7292490 0000391 4 MPOS 6 @ STAR DIODE POWER ASSEMBLY ov AIR COOLED RL TYPE HEATSINK T25-o/ (Two in Series with Air Flow, 60 Conduction) 40C AIR 50C AIR 62 RLS DEVICE MAX. 62 RLS Om/s 2.5 m/s 5.0 m/s 7.5 m/s TYPE VOLT. 0 m/s 2.5 m/s 5.0 m/s 7.5 m/s OLFM 500 LFM | 1000 LFM {1500 LFM RATING OLFM | 500 LFM | 1000 LFM |1500 LFM 990 1190 1290 FD 600 3000 920 1100 1220 1884 2250 2460 FD 900 2000 1790 2130 2340 1400 1740 4930 GD 800 3000 1310 1620 1820 2500 3140 3540 GD 1400 2000 2370 2980 3350 1970 2600 3050 ZD 1500 3000 1830 2430 2840 2820 3800 4490 ZD 2100 2000 2600 3520 4170 3630 4860 5720 ZD 2500 1200 3440 4610 5430 4070 5470 6450 ZD 3000 600 3840 5180 6120 6 @ STAR DIODE POWER ASSEMBLY AIR COOLED WL TYPE HEATSINK (Two in Series with Air Flow, 60 Conduction) 40C AIR 50C AIR 62 WLS DEVICE MAX. 62 WLS O m/s 2.5 m/s 5.0 m/s 7.5 m/s TYPE VOLT. Om/s 2.5 m/s 5.0 m/s 7.5 m/s OLFM 500 LFM | 1000 LFM |1500 LFM RATING OLFM 500 LFM |1000 LFM |1500 LFM 730 1130 1240 1290 FD 600 3000 680 1040 1160 4220 1350 2120 2350 2460 FD 900 2000 1280 2020 2230 2340 980 1620 1830 1930 GD 800 3000 900 1510 1710 1820 1690 2930 3320 3540 GD 1400 2000 1590 2770 3150 3350 1250 2390 2810 3050 ZD 1500 3000 1180 2210 2620 2840 1760 3450 4110 4490 ZD 2100 2000 1610 3200 3810 4170 2290 4430 5250 5720 ZD 2500 1200 2160 4190 4970 5430 2540 4970 5910 6450 ZD 3000 600 2400 4710 5610 6120 17NPOWER SEMICONDUCTORS INC 3eE D MM 7293490 OO0035e & MEPOS 7-o/-o) AIR COOLED ASSEMBLY OUTLINES T-AS-Ol TYPE 22 ULA TYPE 62 ULB TYPE 62 ULA we a4 Ra -241f~ ae (alpia Hotes fesem [12> 1} - 28400 ako Hotes ) 625 m0 ' 2 33em i % NOTE: Power Leads To Top Section! MOTE: Connect OC Power 3 must Be Flexible Bus (GA, (a)'g Dla Hotes-Mntg o2tam fq aug cu Rigid Bus May Be ls : ! e Leeds To Center Heat 2 3 Approx Wt6 Lts $2 Ta ! Sink Sections With On PA2,982,9C2 8 a7 4 18 1712 by 4] <iz! = Flexible Leads | 4 & AC Leads May &0 Rigid Gus (2)151 insulating Rate ia Wadkene (2}1x1 insulating Rads-Mntg isatis4ne (2}im1 trwutating Raits-Mintg be 10 1942254 mi 44 7ne 10, ma? ae (44 Dia-Each Yop Secti ae 127 ()\g Ola Holes-Each Top - we Won | tae sy Section | 4 (ak vie Holes: Exch Top Ui fe HH El t ia Hotes-Each Bottom 292.4 Section | TT \2)), bia Holes~Each Bottom osm = Setion jes Bey ae aa Dis Power Leads To Top Sections ape Ee Flexible Bus,Power Leade Approx we ei the Approx Wr 18 (hs 2165 by To Bottom Section May Be Aigid 5 kg TYPE 22 WMA-, WLA- TYPE 62 WMB~, WLB ; TYPE 62 WMA-, 62 WLA Mount Power Leads To*l Slots In H'Sinka cay AT Inulating Rats BC Loads Must Ga Flexible Gus AC Leads lay Be Aig Bus oh Oia Holes aa Dis Holes Mntg == | IMCHIE am cm | ase elece 4 5 [9 | {127 ofzase S EF? | [rez efi7e I 7"2h10'9| [ise sh 200 7 Le Ty [11"y} [aise [art o X Fz [9 7a} (rv0s [aera Use HSink TStots WOE 9 [23] (abe tsa For Powar Leads as E Caution Regulator Gate Leads Should Enter Rails-Matg Between tnversePairs As Shown Dotted Above &+ Gute Power Leads To Top Section Must Se Flexible Gus,Power Leads Geta Leads As Shown Dotted Above To Bottom $action May Be Rigid Bus TYPE 22 RLA- TYPE 62 RLB TYPE 62 RLA- Pawer Leads To @As.81,0C1,Must Se Flexible Bus,Leads To $A7.982,0C2 May Be Rigid BUS | spre _{9)%4-16 Holas-Powear Take OIF OC Power Leads Must Be Flexible Sus AC Leads May Be Rigid Bus Power Leads May Be Rigid Bus Wem oie = (o3g-16 Holes-Power Take Off 2) yet insulating Rails fa aS hte tne : 2d tahon Hotes atthe ei why Dia Holes (414 Die Holes-Matg Ee c e tatee be Fe f Powar Leads Must & * " lly: te Woo flentletve 2 lg fi = {PEE to ote cee Lis fo Fo Hes 3 hate 3 eet Hider | deent | f]_ 8 7 > ts ol | Fe TWh S TTPO PILo | |S gesrmene = aie : " x 4 ih WS. em (aia ineulatiog om P54 i rs ge \gcz ger Rails Mato . Wesam gota Thjg24g 0p Bore je at wh ifgoia "gx Dp Bore Hotes Og 17400 9.52 mm Saline 1746195300 1 TT AT a 4 areas ~| i: s4em Tienes 164 P2aletne t ey" a if . 3 ' t t I an 3 afta ws SE 7 ay I 7 OE tH tH i Ud u ka, -] [erarglh, Jeeae gh ren sede 20 = Approx Wr 17 Ubs Caution: Regulator Gate Toads Should Lie Across Top Of Gate Coution: Regulator Gate Lends Should Enter Between hnverse Pairs B.s As Shown Oatted As Shown Dotted Above TYPE XM TYPE AS Type AS extrusion is furnished in 6 (152mm) lengths, type XM is available in 6", 8 (203mm) and 12 (305mm) lengths, 18 wtonePOWER SEMICONDUCTORS INC 3eE D MM 7e9L490 00003935 6 MEPOS TYPE 62 RS, RL, WM, WL FAST ACCESS ASSEMBLIES /- Or -O/ 4 [Lb min) 5|.OmmM) Z bia.woLes -f 2 ft} >18'4, 4mm) ~ PT : 3 C <J7 A pi 2 k- "(25 dum) (i2.7mm) thE4_ I L 4h BREF 4(6.35mm) 22KM HEATSINK OUTLINE DIMENSIONS**INCHES/MM HEATSINK Wt. - TYPE A B Cc D* E F G z Ibs./kg. 12.5in. 15.0 9.0 5.75 4.65 2.0 2.65 5.0 RS |31810mm381.0 2290 1466 118.0 508 67.5 127.0 36/16.4 16.5 15.0 13.0 5.75 4.65 2.0 2.65 5.0 RL 1420.0 381.0 3300 = 146.6 118.0 508 67.5 127.0 50/22.5 13.5 17.5 10.0 5.75 5.5 2.25 3.5 5.0 WM |34310 4450 2540 1466 140.0 57.0 89.0 127.0 27/12.2 19.5 19.75 16.0 7.75 7.25 3.125 5,25 7.0 WL 495.0 5000 4060 1970 1840 79.0 133.0 178.0 69/31.0 *Note Standoff Insulators add approx. 1 3/8" (35mm.) to dimension D", Glastic Rails add approx. 1.875" (48mm.} Fast access tabs are 4"x 2 (6.5 x 5imm }) Aluminum, insulation is provided by the use of 3/8 nylon bolts A typical Glastic Rail Insulation is shown above. Such rails are available from PSI. ** For estimating purposes only, contact factory for construction prints. 037 ee zs (eneg l a (sah 93 6ee } 7000 26 eet " f Qt MD ES AL a ties \G TYPE WM TYPE WL T | j O17 (tay = 1 Le O62 7 4 arn =o | | H Ho L 1.05 a7s we n ( she | rt 2875 | azyoapee i ann | Lasps| BeBe RRL as LS @ NOLES TOTAL, ieesne ng ao TIHLJ am Eas || 2 | L_ 9 ___ TYPE RL TYPE U 19POWER SEMICONDUCTORS INC J3eE D MM 7291490 go00394 T MEPOS T-o]- ol T-2 5- ol 1 @ and 3 @ AC SWITCH THYRISTOR POWER ASSEMBLY / WATER COOLED HS TYPE HEATSINK (Two in Series with Water Flow, 180 Conduction) 25 C WATER 35 WATER 22 HSA or 62 HSA DEVICE MAX. 22 HSA or 62 HSA .06 I/s .12 I/s TYPE VOLT. .06 I/s -12 V/s 1.0 GPM 2.0 GPM RATING 1.0 GPM 2.0 GPM 420 440 F 180 3000 380 410 480 500 F 220 2600 440 470 590 630 F 300 2000 550 580 730 750 F 400 1800 670 700 790 840 F 500 1800 730 770 870 920 F 600 1000 810 850 590 630 G 300 3000 550 580 720 760 G 400 2600 670 710 830 890 G 500 2000 770 820 950 1010 G 650 1800 890 940 1040 1110 G 850 1800 960 1030 1150 1220 G 950 1600 1060 1120 1210 1350 Z 800 3000 1120 1260 1410 1570 Z 1000 2600 1300 1450 1700 1880 Z 1200 2000 1560 1740 2000 2220 Z 1400 1800 1850 2060 2240 2500 Z 1600 1400 2070 2310 2530 2810 Z 1800 600 2340 2600 2720 3030 Z 2000 600 2510 2800 3210 3550 Z 2300 400 3020 3340 WATER COOLED NO. IN SERIES .03 I/s .06 I/s .09 I/s 12 1/s HEATSINKS with WATER FLOW .5 GPM 1.0 GPM 1.5 GPM 2.0 GPM 11 HS 1 .03 .02 .015 01 22 HS 2 .04 .03 .025 02 33 HS 3 .05 .04 .035 .03 a 20A NaamePOWER SEMICONDUCTORS INC 3cE D WH 7291490 0000395 1 MEPOS 7-O1-O) 3 @ DC BRIDGE THYRISTOR POWER ASSEMBLY 7-2 5-6] WATER COOLED HS TYPE HEATSINK (Two in Series with Water Flow, 120 Conduction) 25 C WATER 35 C WATER 62 HSB DEVICE MAX. 62 HSB .06 I/s .12 I/s TYPE VOLT. .06 I/s .12 M/s 1.0 GPM 2.0 GPM RATING 1.0 GPM 2.0 GPM 570 600 F 180 3000 510 550 650 680 F 220 2600 600 630 800 850 F 300 2000 740 780 980 1020 F 400 1800 910 950 1070 1130 F 500 1800 980 1040 1180 1240 F 600 1000 1090 1150 800 850 G 300 3000 740 780 970 1030 G 400 2600 910 960 1120 1200 G 500 2000 1040 1110 1290 1370 G 650 1800 7200 1270 1410 1500 G 850 1800 1300 1390 1550 1650 G 950 1600 1430 1520 1640 1830 Z 800 3000 1520 1700 1900 2120 Z 1000 2600 1760 1960 2290 2540 Z 1200 2000 2110 2350 2700 3000 Z 1400 1800 2500 2780 3030 3380 Z 1600 1400 2800 3120 3420 3800 Z 1800 600 3160 3520 3680 4090 Z 2000 600 3400 3790 4340 4800 Z 2300 400 4080 4520 20BPOWER SEMICONDUCTORS INC JeE D MM 7291490 0000356 3 MPOS F-Q56! T-o1-9! 6 @ STAR AND DOUBLE WYE WITH INTERPHASE TRANSFORMER THYRISTOR POWER ASSEMBLY WATER COOLED 6 @ STAR 62 HSS (60 Conduction) WATER COOLED DOUBLE WYE 62 HSW- (120 Conduction) (Two in Series with Water Flow) 25C WATER 35C WATER 6 @ STAR DOUBLE WYE DEVICE | MAX. 6@ STAR DOUBLE WYE .06 I/s 12 M/s .06 I/s 12 1/s TYPE VOLT. .06 I/s 12 I/s .06 I/s 12 M/s 1.0GPM | 2.0GPM | 1.0GPM | 2.0GPM RATING | 1.0GPM | 2.0GPM | 1.0GPM | 2.0GPM 880 920 1140 1200 F 180 3000 810 850 1020 1100 1000 1050 1300 1360 F 220 2600 920 960 1200 1260 1220 1260 1600 1700 F 300 2000 1130 1180 1480 1560 1450 1510 1960 2040 F 400 1800 1360 1400 1820 1900 1650 1720 2140 2260 F 500 1800 1520 1590 1960 2080 1800 1870 2360 2480 F 600 1000 1660 1730 2180 2300 1220 1280 1600 1700 | G300 3000 1130 1210 1480 1560 1490 1580 1940 2060 | G400 2600 1390 1460 1820 1920 1750 1850 2240 2400 | G500 2000 1620 1720 2080 2220 2010 2120 2580 2740 | G650 1800 1880 1980 2400 2540 2210 2200 2820 3000 | G850 1800 2050 2170 2600 2780 2440 2570 3100 3300 | G950 1600 2260 2400 2860 3040 2630 2900 3280 3660 Z 800 3000 2450 2690 3040 3400 3090 3410 3800 4240 Z 1000 2600 2860 3160 3520 3920 3680 4040 4580 5080 Z 1200 2000 3410 3760 4220 4700 4330 4760 5400 6000 Z 1400 1800 4020 4420 5000 | 5560 4870 5360 6060 6760 Z 1600 1400 4520 4970 5600 6240 5450 5980 6840 7600 Z 1800 600 5060 5570 6320 7040 5840 6390 7360 8180 Z 2000 600 5440 5960 6800 7580 6760 7380 8680 9600 Z 2300 400 6400 7000 8160 9040 20C32E D M@@ 72924590 0000397 5 m@POS T-0/-0/ T-25 -o! POWER SEMICONDUCTORS INC 3 @ DC BRIDGE DIODE POWER ASSEMBLY WATER COOLED HS TYPE HEATSINK (Two in Series with Water Flow, 120 Conduction) 25C WATER 35C WATER 62HSB-- DEVICE MAX 62HSB-- 06 I/s .12 Ws TYPE VOLT .06 I/s 12 Is 1.0 GPM 2.0 GPM RATING 1.0 GPM 2.0 GPM 1120 1180 FD 600 3000 1060 1110 2070 2180 FD 900 2000 1980 2080 1720 1830 GD 800 2000 1620 1720 3020 3230 GD 1400 2000 2880 3070 2980 3310 ZD 1500 3000 2800 3120 4390 4910 ZD 2100 2000 4110 4600 5450 6080 ZD 2500 1200 5190 5800 6150 6870 ZD 3000 600 5850 6540 6 @ STAR AND DOUBLE WYE WITH INTERPHASE TRANSFORMER DIODE POWER ASSEMBLY 6 @ STAR 62HSS(60 Conduction) and DOUBLE WYE 62HSW(120 Conduction) (Two in Series with Water Flow) 25C WATER 35C WATER 6ZSTAR DOUBLEWYE | DEVICE | MAX 6@STAR DOUBLE WYE O6V/s | .12W/s | .06i/s | .12i/s | TYPE | VOLT Foggy, | a2s | woes | 12 Vs 1.0GPmM | 20GPM | 1.0GPM | 20GPM RATING| 1.0GPM|] 2.0GPM| 1.0GPM | 2.0 GPM 1680 1760 2240 2360 | FD 600 | 3000 1580 1650 2120 2220 3120 3240 4140 4360 | FD 900 | 2000 3000 3110 3960 4160 2600 2730 3440 3660 | GD800 | 3000 2470 2600 3240 3440 4850 5140 6040 e460 | GD 1400] 2000 4640 4920 5760 6140 4730 5180 5960 6620 | zp1500| 3000 4460 4900 5600 6240 7240 8010 8780 9820 | zD2100! 2000 6800 7530 8220 9200 8870 9790 | 10900 | 12160 | zD2500] 1200 8480 9360 10380 | 11600 10080 | 11150 | 12300 | 13740 | zp3000| 600 9630 10650 | 11700 | 13080 20 DPOWER SEMICONDUCTORS INC JeE D MM 7293490 O600598 7? MBPOS u 7 -o/-ol TYPE HS LIQUID COOLED POWER PACKAGES Ta5-O/ Single Cell Double Cell Triple Cell 11HS 22HS 33HS Single Cell Double Cell Triple Cell MOUNTING . The HS type heatsinks are generally mounted by bolting one terminal to a bus, with the other terminal(s) connected ) by means of flexible straps. If flexible connections are made to both terminals the HS heatsink can be supported by stand off insulators threaded for the %-20 clamp bolts. 21POWER SEMICONDUCTORS INC 3eE D WM 7291490 00003995 5 mmPos T-61- oO; Tra S-Ol Another example of PS | leadership is the introduction of a complete line of Fast Access heatsinks and mounting hardware. Fast Access" Power Packages This equipment makes possible inspection and/or replacement of a thyristor or diode in less than a minute. Several types are available. The V.I.P. package (FIG. A) features a complete assembly, with or without cabinet for either DC bridge or AC switch service. A more flexible arrangement is shown in FIG. B whereby universal mounting feet are added to several types of heatsinks (RL, WM and WL), These mounting feet are bolted to various electrical and mechanical mounting accessories and can be easily removed. Standoff insulators can be used or extruded insulating channel with or without a complete bus system as shown in FIG. C. The advantage of this system is simplicity of design, low cost and low tooling cost should you care to make your own. Note that the feet themselves add 1% (44.5mm.) length to each end, while the extruded insulating channel or bus system adds another 1%" (44.5mm.) to each end for a total of 7 (178mm.) overall. If integral fans are desired, another 2 (51 mm) is added for each. The two fan system shown in (FIG. B) is particularly popular for reliability considerations, as the assembly is sized to operate with just one fan functioning. Fast access has proven to be a most effective selling tool for the progressive control manufacturer, particularly when used with the new fuseless design philosophies so popular in drives and electro-chemical supplies. FIG. B The Type AS Astrosink Shown in FIG. D the ASTROSINK is a specialized shape used primarily for upgrading of a very popular European semiconductor. Originally designed for 28 mm and 33 mm wafers, the ASTROSINK can now accommodate the 52 mm ASTROPACK and thus offer present users the chance to upgrade their design for more surge capability, continuous current or both. ~ While only slightly better than the RL type heatsink in terms of thermal efficiency the ASTROSINK has also gained acceptance as a sturdy work horse on which pressure mounted or stud type semiconductors can be mounted, with the convenient mounting tabs offering simple connection to buswork. Available in 6 lengths as standard the thermal impedance figures are given in FIG, E. Convert-a-Pack While the industry has rapidly switched from stud to pressure mounted semiconductors, many customers wish to upgrade existing controls using stud type heatsinks to take advantage of pressure mount without a major redesign. The PSt Convert-a-Pack answers this need (FIG. F), with special mounting hardware and auxiliary heatsinks fitting inside of existing extrusions and bus connections. Each Convert-a-Pack is specifically designed by P.S.I. for individual objectives. They offer the contro! manufacturer the fastest method of enjoying most of the advantages of pressure mounted units, AIR VELOCITY @HSAMB. 2.5m/sec 500 LFM .12C/Watt 5.0m/sec 1000 LFM -08 7.5m/sec 1500 LEM .06 10.0m/sec 2000 LFM .05 fae > 2537 MIE lll FIG. D FIG, E For a pair of ASTROSINKS 149 mm. (5.87) 22POWER SEMICONDUCTORS TYP T SURFACE CREEPAGE ~ DIA Standard 10 twisted pair-gate soldered to package FIG. 1 TABLE OF DIMENSIO Conversion Table NS DECIMAL INCHES METRIC MM n < Mi MIN MAX MIN MAX 744 752 | 18 897 19 101 030 060 762 1.524 515 565 | 13081 14 351 1600 | 1656 | 4064 42 06 110 _ 2794 1090 | 1125 | 2769 28 55 135 145 3.429 3 683 067 083 1701 2 108 INC OUTLINE DRAWINGS 340 _ 8 636 Cl/AlM|/DlemMioo|a/y 186 189 4724 4801 JEDEC Outline TO-48 evo Specific Onentotion fo Base Hex te ott oo BS at 050 25-28 Unt-2A4 ren(3.0) (2.3) Threod (Ploted) node ( To7) 38 FIG. 6 JEDEC Outline DO-5 No Specific Onentation with fr i Respect to Hex Bose |g 175 340 445 35 (358) (3.96) 56 (1694) 667 1000 Mox ye (25 40) Mox 1143)450 Max 1 ~~ ~ 47 28-Unt-2A 3cE D BB 72914590 oooo4oR 7 REPOS -T-4).20 E CATHODE CATHODE J... re {peu4 @emm) DAE 4 GATE GATE B (THYRISTOR) 1 ! a i T ANODE D c -| | FIG. 2 A ANODE FIG, 2 Power Power Mega | H-,HH-HD- J-JD E-.ED-, Pack F-.FD- Pack G-,GD- Pack | Astro Pack J-Pack A| 1.73 (44)| 1.73 (44) 11.93 (49) {2.75 (70) 4.80 (122) B -625 (16)) .97(25) | .97(25) | .97 (25) 1.38 (35.0) Ci} 1.14 (29)| 1.00 (25.4)] 1.25 (32) | 1.75 (44.5) 20178 2) D} .025 (.6) | .08(2.0) | .08 (2.0) | .07 (1.8) | .14 (3.5) Ej .025(.6)| .11 (2.8) | .12(3.05)} .07 (1.8) | .14 (3.5) Note: Thyristors have gate and aux. cathode leads of #18 stranded wire, 10 (255mm) length standard. JEDEC Outline TO-94 ow JEDEC Outline TO-93 Gm 10 pana pee 17.6) 0.30Max. = eee 125 Hex (31,8) 7. No Specific J opm | (Rad ond Write) Sher (a. Seon] Gate ( wtute) 394) 135 i ous 343) 135 .281010 Sow | Cathode toe (ted a * (Fe8) $388 7500 (1905) \ Cathode { Red) Gate woe 6 8800740) | (307) 1.218 Max (i591) 6 265 __- (58.7)2312 menses 26 1396) \ ioe Mor. (2.54) keer fl ga Tide | ORet.( 49 5 3) rae ae poa| FT 274) 09 }-20uNFf ipa git Foie UNE 2A Jen, 204) L ZatThresd fi i { ay Bion FIG. 8 JEDEC Outline DO-8 JEDEC Outline DO-9 Mox 650 p- (16.51) i = Oo opeciic > "5304 530 (35) . nientotion ---_, { with Respect Oy poseeaihc (S238 yee = Wh spec - 0 rex se s (iS52)3888 (S74) 268 Soh 3751959) (12 70) a Fit * (182: 6 $00 Me wh tae s8n67s (127) S00 (2540) i (25.40) 100 aoe _ 1000 Max | Max Max jt (82 55) 3250 (2897) abo t 2619 ex 3175 (s715)22: 1062 Max Th 45 (18:38 ayes 307 a Across tL HAS 4) S37 121 do Ze --+f Flats Flats g2 (180) (2103) 828 orp 38 . 750 6 Unl-2A = 250\ 6.4 20 15f ; FIG. 10 FIG. 11 26