MBR1100RL - ON Semiconductor - Datasheet.Directory

June, 2006 − Rev. 6 1Publication Order Number:

MBR1100/D

MBR1100

Preferred Device

Axial Lead Rectifier

These rectifiers employ the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

Features

•Low Reverse Current

•Low Stored Charge, Majority Carrier Conduction

•Low Power Loss/High Efficiency

•Highly Stable Oxide Passivated Junction

•Guard−Ring for Stress Protection

•Low Forward Voltage

•175°C Operating Junction Temperature

•High Surge Capacity

•These are Pb−Free Devices*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Polarity: Cathode Indicated by Polarity Band

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100 V

Average Rectified Forward Current

(VR(equiv) ≤ 0.2 VR (dc), R qJA = 50°C/W,

P. C. Board Mounting, [s ee Note 3], TA = 120°C)

IO1.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

IFSM 50 A

Operating and Storage Junction Temperature

Range (Note 1) TJ, Tstg −65 to

+175 °C

Voltage Rate of Change (Rated VR) dv/dt 10 V/ns

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dPD/dTJ < 1/RqJA.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

SCHOTTKY

BARRIER RECTIFIER

1.0 AMPERE, 100 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

MBR1100 Axial Lead* 1000 Units/Bag

MBR1100G Axial Lead* 1000 Units/Bag

http://onsemi.com

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specificatio

Brochure, BRD8011/D.

MBR1100RL Axial Lead* 5000/Tape & Ree

MBR1100RLG Axial Lead* 5000/Tape & Ree

DO−41

AXIAL LEAD

CASE 59

STYLE 1

MARKING DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

MBR1100

YYWW G

MBR1100

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THERMAL CHARACTERISTICS (See Note 4)

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA See Note 3 °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 1 A, TL = 25°C)

(iF = 1 A, TL = 100°C)

VF0.79

0.69

Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)

(TL = 25°C)

(TL = 100°C)

iR0.5

5.0

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current {

Figure 3. Current Derating

(Mounting Method 3 per Note 3) Figure 4. Power Dissipation

0.6 0.90

vF, INSTANTANEOUS VOLTAGE (VOLTS)

2.0

5.0

1.0

VR, REVERSE VOLTAGE (VOLTS)

60 900

0.2

0.04

0.02

0.01

120 1600

TA, AMBIENT TEMPERATURE (°C)

4.0

3.0

2.0

1.0

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

1.00

4.0

3.0

2.0

1.0

2.0140

iF, INSTANTANEOUS FORWARD CURRENT (AMP

PF(AV), AVERAGE POWER DISSIPATION (WATTS)

0.5

0.2

0.1

0.30.1 0.2 0.4 0.5 0.7 0.8 70 8010 20 30 40 50

0.1

0.4

1.0

20 40 60 80 100 3.0 4.0 5.0

0.05

0.02

1.1 1.41.0 1.2 1.3 100

, REVERSE CURRENT ( A)

4.0

2.0

100

200

1 K

400

200180

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

SQUARE WAVE

TJ = 150°C

100°C

25°C

TJ = 150°C

125°C

100°C

{ The curves shown are typical for the highest voltage

device in the voltage grouping. Typical reverse current for

lower voltage selections can be estimated from these

same curves if VR is sufficiently below rated VR.

MBR1100

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Figure 5. Typical Capacitance

20 400

VR, REVERSE VOLTAGE (VOLTS)

150

C, CAPACITANCE (pF)

50 10060

100

10 70 80 90

TJ = 25°C

fTEST = 1 MHz

NOTE 3 — MOUNTING DATA:

Data shown for thermal resistance junction−to−ambient

(RqJA) for the mounting shown is to be used as a typical

guideline values for preliminary engineering or in case the

tie point temperature cannot be measured.

Typical Values for RqJA in Still Air

Mounting

Method

Lead Length, L (in) RqJA

1/8 1/4 1/2 3/4

1 52 65 72 85 °C/W

2 67 80 87 100 °C/W

3 — 50 °C/W

Mounting Method 1

P.C. Board with

1−1/2″ x 1−1/2″

copper surface.

Mounting Method 3

P.C. Board with

1−1/2″ x 1−1/2″

copper surface.

BOARD GROUND

PLANE

Mounting Method 2

ÉÉÉÉÉÉÉÉ

L = 3/8″

NOTE 4 — THERMAL CIRCUIT MODEL:

(For heat conduction through the leads)

TA(A) TA(K)

TL(A) TC(A) TJTC(K) TL(K)

RqS(A) RqL(A) RqJ(A) RqJ(K

)

RqL(K) RqS(K)

Use of the above model permits junction to lead thermal

resistance for any mounting configuration to be found. For

a given total lead length, lowest values occur when one side

of the rectifier is brought as close as possible to the heat sink.

Terms in the model signify:

TA = Ambient Temperature TC = Case Temperature

TL = Lead Temperature TJ = Junction Temperature

RqS = Thermal Resistance, Heat Sink to Ambient

RqL = Thermal Resistance, Lead to Heat Sink

RqJ = Thermal Resistance, Junction to Case

PD = Power Dissipation

(Subscripts A and K refer to anode and cathode sides,

respectively .) Values for thermal resistance components are:

RqL = 100°C/W/in typically and 120°C/W/in maximum.

RqJ = 36°C/W typically and 46°C/W maximum.

NOTE 5 — HIGH FREQUENCY OPERATION:

Since current flow in a Schottky rectifier is the result of

majority carrier conduction, it is not subject to junction

diode forward and reverse recovery transients due to

minority carrier injection and stored charge. Satisfactory

circuit analysis work may be performed by using a model

consisting of an ideal diode in parallel with a variable

capacitance. (See Figure 5)

Rectification efficiency measurements show that

operation will be satisfactory up to several megahertz. For

example, relative waveform rectification efficiency is

approximately 70 percent at 2 MHz, e.g., the ratio of dc

power to RMS power in the load is 0.28 at this frequency,

whereas perfect rectification would yield 0.406 for sine

wave inputs. However, in contrast to ordinary junction

diodes, the loss in waveform efficiency is not indicative of

power loss: it is simply a result of reverse current flow

through the diode capacitance, which lowers the dc output

voltage.

MBR1100

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PACKAGE DIMENSIONS

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A4.10 5.200.161 0.205

B2.00 2.700.079 0.106

D0.71 0.860.028 0.034

F−−− 1.27−−− 0.050

K25.40 −−−1.000 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO−41 OUTLINE SHALL APPLY

4. POLARITY DENOTED BY CATHODE BAND.

5. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

AXIAL LEAD

CASE 59−10

ISSUE U

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES) STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MBR1100/D

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