VOL617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES * Low profile package * High collector emitter voltage, VCEO = 80 V A 1 4 C C 2 3 E * Isolation test voltage, 5000 VRMS * Isolation voltage VIORM = 1050 Vpeak * Low coupling capacitance * High common mode transient immunity 17295-6 * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION APPLICATIONS The VOL617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package. * Telecom * Industrial controls * Battery powered equipment * Office machines It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. * Programmable controllers The coupling device is designed for signal transmission between two electrically separated circuits. AGENCY APPROVALS * UL1577, file no. E76222 * cUL CSA 22.2 bulletin 5A, double protection * DIN EN 60747-5-5, available with option 1 * BSI: EN 60065:2002, EN 60950-1:2006 * FIMKO ORDERING INFORMATION V O L 6 1 7 A - PART NUMBER # CTR BIN X 0 4 pin LSOP, mini-flat, long creepage VDE, UL, cUL, BSI, FIMKO 4 pin LSOP, mini-flat, long creepage 1 PACKAGE OPTION T TAPE AND REEL LSOP 10.2 mm CTR (%) AGENCY CERTIFIED/PACKAGE UL, cUL, BSI, FIMKO 0 5 mA 40 to 80 63 to 125 100 to 200 160 to 320 VOL617A-1T VOL617A-2T VOL617A-3T VOL617A-4T 40 to 80 63 to 125 100 to 200 160 to 320 VOL617A-1X001T VOL617A-2X001T VOL617A-3X001T VOL617A-4X001T Document Number: 82424 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 04-May-12 VOL617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage Power dissipation VR 6 V Pdiss 100 mW Forward current IF 60 mA Junction temperature Tj 125 C Collector emitter voltage VCEO 80 V Emitter collector voltage VECO 7 V IC 50 mA OUTPUT Collector current tp/T = 0.5, tp < 10 ms IC 100 mA Pdiss 150 mW Tj 125 C Isolation test voltage between emitter and detector VISO 5000 VRMS Storage temperature range Tstg - 55 to + 125 C Tamb - 55 to + 100 C Tsld 260 C Power dissipation Junction temperature COUPLER Ambient temperature range Soldering temperature (1) max. 10 s, dip soldering distance to seating plane 1.5 mm Notes * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.5 UNIT INPUT Forward voltage IF = 5 mA VF 1.16 VR = 0 V, f = 1 MHz CO 45 Collector emitter leakage current VCE = 10 V, IF = 0 A ICEO 10 Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 7 IC = 1.0 mA, IF = 5 mA VCEsat 0.25 f = 1 MHz CC 0.25 Capacitance V pF OUTPUT 200 nA pF COUPLER Collector emitter saturation voltage Coupling capacitance 0.4 V pF Note * Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified) PARAMETER IC/IF TEST CONDITION IF = 5 mA, VCE = 5 V PART SYMBOL MIN. VOL617A-1 CTR 40 TYP. MAX. 80 UNIT % VOL617A-2 CTR 63 125 % VOL617A-3 CTR 100 200 % VOL617A-4 CTR 160 320 % Document Number: 82424 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 04-May-12 VOL617A www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Turn on time Rise time Turn off time Fall time TEST CONDITION VCC = 5 V, IC = 2 mA, RL = 100 VCC = 5 V, IC = 2 mA, RL = 100 VCC = 5 V, IC = 2 mA, RL = 100 VCC = 5 V, IC = 2 mA, RL = 100 SYMBOL ton tr toff tf MIN. TYP. 6 3.5 5.5 5 MAX. VCC = 5 V Input UNIT s s s s Input pulse RL 10 % VOUT Output pulse 90 % tr tf t off t on isfh618a_10 isfh618a_12 Fig. 1 - Test Circuit Fig. 2 - Test Circuit and Waveforms SAFETY AND INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 2 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 4) VIOTM 8 kV Vpd 1.68 Insulation voltage TYP. UNIT kV VIORM Insulation resistance MAX. 1050 Vpeak VIO = 500 V, Tamb = 25 C RIO 1012 VIO = 500 V, Tamb = 100 C RIO 1011 VIO = 500 V, Tamb = 150 C (construction test only) RIO 109 Safety rating - maximum input current Safety rating - maximum power dissipation Rated impulse voltage Safety rating - maximum ambient temperature Isi 130 mA PSO 265 mW VIOTM 8 kV Tsi 150 Clearance distance C 8.00 mm Creepage distance 8.00 mm Insulation distance (internal) 0.40 mm Note * According to DIN EN 60747-5-2 (VDE 0884) (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor PSO (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 25 50 75 100 125 Tsi - Safety Temperature (C) Fig. 3 - Derating Diagram 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 4 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5 Document Number: 82424 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 04-May-12 VOL617A www.vishay.com Vishay Semiconductors 300 10 000 ICEO - Collector Dark Current, with Open Base (nA) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 100 10 1 96 11700 40 80 0 120 Tamb - Ambient Temperature (C) IC - Collector Current (mA) 0 C 1.3 1.2 1.1 25 C 1.0 50 C 0.9 110 C 0.8 1.00 10.00 IF - Forward Current (mA) VCE = 5 V 10 1 0.1 0.01 0.1 100.00 Fig. 6 - Forward Current vs. Forward Voltage 1 100 10 IF - Forward Current (mA) 95 11027 17600 Fig. 9 - Collector Current vs. Forward Current 100 VCE = 5 V IF = 5 mA 1.5 1.0 0.5 IC - Collector Current (mA) 2.0 95 11025 100 75 100 - 55 C 1.4 0 - 25 50 Fig. 8 - Collector Dark Current vs. Ambient Temperature 1.5 0.7 0.10 25 Tamb - Ambient Temperature (C) 95 11026 Fig. 5 - Total Power Dissipation vs. Ambient Temperature V F - Forward Voltage (V) 1000 0 0 CTRrel - Relative Current Transfer Ratio VCE = 20 V IF = 0 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0 25 50 75 Tamb - Ambient Temperature (C) Fig. 7 - Relative Current Transfer Ratio vs. Ambient Temperature 0.1 95 10985 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 10 - Collector Current vs. Collector Emitter Voltage Document Number: 82424 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 04-May-12 VOL617A www.vishay.com Vishay Semiconductors ton/toff - Turn-On/Turn-Off Time (s) 1.0 VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 1 VCE = 5 V 100 10 95 11029 1 6 toff 4 2 0 0 10 Fig. 12 - Current Transfer Ratio vs. Forward Current 4 6 8 50 Saturated operation VS = 5 V RL = 1 k 40 30 toff 20 10 100 IF - Forward Current (mA) 2 IC - Collector Current (mA) Fig. 13 - Turn-On/Turn-Off Time vs. Collector Current ton/toff - Turn-On/Turn-Off Time (s) CTR - Current Transfer Ratio (%) 1000 Non-saturated operation VS = 5 V RL = 100 ton 95 11030 Fig. 11 - Collector Emitter Saturation Voltage vs. Collector Current 1 0.1 8 100 10 IC - Collector Current (mA) 95 11028 10 ton 0 0 95 11031 5 10 15 20 IF - Forward Current (mA) Fig. 14 - Turn-On/Turn-Off Time vs. Forward Current Document Number: 82424 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 04-May-12 VOL617A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 0.10 0.10 + 0.10 - 0.05 7.50 0.20 0.45 0.1 0.70 + 0.30 - 0.40 2.54 nom. 4 3 2.54 Possible footprint 0.90 8.20 1 22533 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING (example) 617A-3X1 V YWW 68 Notes * Only option 1 is reflected in the package marking with the characters "X1". * Tape and reel suffix (T) is not part of the package marking. Document Number: 82424 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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